arXiv subjects

Thuy An Bui

Publications and source records attributed to Thuy An Bui.

3 recordsLinked to original sources

arXiv2025

Hexatic Phase in Covalent Two-Dimensional Silver Iodide

According to the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) theory, the transition from a solid to liquid in two dimensions proceeds through an orientationally ordered liquid-like hexatic phase. However, alternative mixed melting scenarios, in which melting proceeds through the hexatic phase with both continuous and discontinuous transitions, have also been observed in some two-dimensional systems. In this study, we imaged silver iodide embedded in multilayer graphene using time- and temperature-resolved in situ atomic-resolution scanning transmission electron microscopy and nanobeam electron diffraction. We observed the hexatic phase and provide evidence supporting a mixed melting scenario.

cond-mat.mtrl-sci↗

arXiv2025

Atomically clean free-standing two-dimensional materials through heating in ultra-high vacuum

Surface contamination not only influences but in some cases even dominates the measured properties of two-dimensional materials. Although different cleaning methods are often used for contamination removal, commonly used spectroscopic cleanliness assessment methods can leave the level of achieved cleanliness ambiguous. Despite two decades of research on 2D materials, the true cleanliness of the used samples is often left open to interpretation. In this work, freestanding monolayer graphene and hexagonal boron nitride are annealed at different temperatures in a custom-built ultra-high vacuum heating chamber, connected to a scanning transmission electron microscope via a vacuum transfer line, enabling atomically resolved cleanliness characterization as a function of annealing temperature, while eliminating the introduction of airborne contamination during sample transport. While annealing at 200 °C already reduces contamination significantly, it is not until 400 °C or higher, where over 90% of the free-standing monolayer areas are atomically clean. At this point, further contamination removal is mainly limited by defects in the material and metal contamination introduced during the sample transfer or growth. The achieved large, atomically clean areas can then be used for further nanoscale engineering steps or device processing, facilitating interaction with the material rather than contamination.

cond-mat.mtrl-sci↗

arXiv2023

Creation of single vacancies in hBN with electron irradiation

Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.

cond-mat.mes-hall↗