arXiv subjects

Tiago C. Ribeiro

Publications and source records attributed to Tiago C. Ribeiro.

8 recordsLinked to original sources

arXiv2007

Electromagnetic response of high-Tc superconductors -- the slave-boson and doped-carrier theories

We evaluate the doping dependence of the quasiparticle current and low temperature superfluid density in two slave-particle theories of the tt't''J model -- the slave-boson theory and doped-carrier theory. In the slave-boson theory, the nodal quasiparticle current renormalization factor $α$ vanishes proportionally to the zero temperature superfluid density $ρ_S(0)$; however, we find that away from the $ρ_S(0) \to 0$ limit $α$ displays a much weaker doping dependence than $ρ_S(0)$. A similar conclusion applies to the doped-carrier theory, which differentiates the nodal and antinodal regions of momentum space. Due to its momentum space anisotropy, the doped-carrier theory enhances the value of $α$ in the hole doped regime, bringing it to quantitative agreement with experiments, and reproduces the asymmetry between hole and electron doped cuprate superconductors. Finally, we use the doped-carrier theory to predict a specific experimental signature of local staggered spin correlations in doped Mott insulator superconductors which, we propose, should be observed in STM measurements of underdoped high-Tc compounds. This experimental signature distinguishes the doped-carrier theory from other candidate mean-field theories of high-Tc superconductors, like the slave-boson theory and the conventional BCS theory.

cond-mat.str-el↗

arXiv2006

The Electronic States of Two Oppositely doped Mott Insulators Bilayers

We study the effect of Coulomb interaction between two oppositely doped low-dimensional tJ model systems. We exactly show that, in the one-dimensional case, an arbitrarily weak interaction leads to the formation of charge neutral electron-hole pairs. We then use two different mean-field theories to address the two-dimensional case, where inter-layer excitons also form and condense. We propose that this results in new features which have no analog in single layers, such as the emergence of an insulating spin liquid phase. Our simple bilayer model might have relevance to the physics of doped Mott insulator interfaces and of the new four layer Ba2CaCu4O8 compound.

cond-mat.str-el↗

arXiv2006

Tunneling spectra of layered strongly correlated d-wave superconductors

Tunneling conductance experiments on cuprate superconductors exhibit a large diversity of spectra that appear in different nano-sized regions of inhomogeneous samples. In this letter, we use a mean-field approach to the tt't''J model in order to address the features in these spectra that deviate from the BCS paradigm, namely, the bias sign asymmetry at high bias, the generic lack of evidence for the Van Hove singularity, and the occasional absence of coherence peaks. We conclude that these features can be reproduced in homogeneous layered d-wave superconductors solely due to a proximate Mott insulating transition. We also establish the connection between the above tunneling spectral features and the strong renormalization of the electron dispersion around (0,pi) and (pi,0) and the momentum space anisotropy of electronic states observed in ARPES experiments.

cond-mat.str-el↗

arXiv2006

The short-range correlations of a doped Mott insulator

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to this interplay, two different spin correlations coexist around a mobile vacancy. These local correlations provide an effective two-band picture that explains the two-band structure observed in various theoretical and experimental studies, the doping dependence of the momentum space anisotropic pseudogap phenomena and the asymmetry between hole and electron doped cuprates.

cond-mat.str-el↗

arXiv2006

Doped carrier formulation and mean-field theory of the tt't''J model

In the generalized-tJ model the effect of the large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. To explicitly capture the interplay between the hole dynamics and local spin correlations we derive a new formulation of the generalized-tJ model where doped carrier operators are used instead of the original electron operators. This ``doped carrier'' formulation provides a new starting point to address doped spin systems and we use it to develop a new, fully fermionic, mean-field description of doped Mott insulators This mean-field approach reveals a new mechanism for superconductivity, namely spinon-dopon mixing, and we apply it to the tt't''J model as of interest to high-temperature superconductors. In particular, we use model parameters borrowed from band calculations and from fitting ARPES data to obtain a mean-field phase diagram that reproduces semi-quantitatively that of hole and electron doped cuprates. The mean-field approach hereby presented accounts for the local antiferromagnetic and d-wave superconducting correlations which, we show, provide a rational for the role of t' and t'' in strengthening superconductivity as expected by experiments and other theoretical approaches. As we discuss how t, t' and t'' affect the phase diagram, we also comment on possible scenarios to understand the differences between as-grown and oxygen reduced electron doped samples.

cond-mat.str-el↗

arXiv2005

New mean field theory of the tt't''J model applied to the high-Tc superconductors

We introduce a new mean field approach to the tt't''J model that incorporates both electron-like quasiparticle and spinon excitations as suggested by some experiments and numerical studies. It leads to a mean field phase diagram which is consistent with that of hole and electron doped cuprates. Moreover, it provides a framework to describe the observed evolution of the electron spectral function from the undoped insulator to the overdoped Fermi metal for both hole and electron doping. The theory also provides a new non-BCS mechanism leading to superconductivity.

cond-mat.supr-con↗

arXiv2005

Momentum space anisotropy in doped Mott insulators

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different momenta is proposed. In this picture, the disparity between the nodal and antinodal regions, observed by experiments in the underdoped cuprate superconductors, follows from local energetic considerations and amounts to the distinction between well defined quasiparticle behavior and spin-charge separation related phenomenology.

cond-mat.str-el↗

arXiv2003

Possible Z2 phase and spin-charge separation in electron doped cuprate superconductors

The SU(2) slave-boson mean-field theory for the tt'J model is analyzed. The role of next-nearest-neighbor hopping t' on the phase-diagram is studied. We find a pseudogap phase in hole-doped materials (where t'<0). The pseudo-gap phase is a U(1) spin liquid (the staggered-flux phase) with a U(1) gauge interaction and no fractionalization. This agrees with experiments on hole doped samples. The same calculation also indicates that a positive t' favors a Z2 state with true spin-charge separation. The Z2 state that exists when t' > 0.5J can be a candidate for the pseudo-gap phase of electron-doped cuprates (if such a phase exists). The experimental situation in electron-doped materials is also addressed.

cond-mat.str-el↗