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Tiago de Oliveira Schneider

Publications and source records attributed to Tiago de Oliveira Schneider.

8 recordsLinked to original sources

A transfer-rod-mounted rotatable sample holder enabling a compact modular vacuum system for ion-beam milling, oblique magnetron sputtering, and co-sputtering

We present a novel multifunctional sample-holder concept for compact research-scale vacuum systems. The sample holder is mounted directly on the transfer rod and remains mechanically connected to it throughout loading, transfer, deposition, and ion-beam milling. In contrast to conventional layouts, no handover to a separate substrate stage is required. By combining axial transfer motion, rotation around the transfer-rod axis, and independent substrate rotation, the holder itself defines the relevant process geometries and enables standard deposition, oblique deposition at freely selectable incidence angles, substrate rotation, and co-sputtering from adjacent sources. A shielding plate integrated into the sample holder acts as both a substrate shutter and a source shield. This reduces the need for separate shutter mechanisms and allows a compact radial arrangement of four 2-inch magnetron sputter sources without source-tilting mechanisms. The concept was implemented in a modular vacuum system assembled from standard DN100CF components, combining a load lock, magnetron sputtering, and ion-beam milling. The system reaches a base pressure of $5 \cdot 10^{-8}\,\mathrm{mbar}$ without bakeout. The functionality of the sample-holder concept is validated by oblique deposition of Ta/CoFeB bilayers, which exhibit pronounced uniaxial in-plane magnetic anisotropy, and by co-sputtering of an Au--Ag composition series, whose resistivity follows the expected Nordheim-type composition dependence.

cond-mat.mtrl-sci↗

Thickness-Dependent Orbital-to-Spin Torque Signatures in Cr/Gd/Co Thin Films

We studied orbital-torque generation in Cr(10nm)/Gd($t_{\mathrm{Gd}}$)/Co(3nm)/TaO$_x$ and the inverted stack Co(3nm)/Gd($t_{\mathrm{Gd}}$)/Cr(10nm) with $t_{\mathrm{Gd}}$ from 0 to $5\,\mathrm{nm}$ by combining electrical harmonic Hall measurements with magnetometry. A detailed understanding of the magnetometric data is obtained by cross-sectional chemical composition mapping. The data show temperature-dependent magnetic compensation points, while elemental analysis provides evidence of pronounced intermixing, in particular of Gd and Co layers. From the harmonic Hall dataset we extract the damping-like (DL) and field-like (FL) torque efficiencies normalized to the applied electric field, $ξ_{\mathrm{DL}}^{E}$ and $ξ_{\mathrm{FL}}^{E}$, and interpret their dependence on the Gd interlayer thickness using two different descriptions: (i) a naive-layer model and (ii) an alloy model that accounts for interfacial mixing. Notably, upon reversing the stack order, the FL contribution changes sign, whereas the DL contribution does not change sign within the harmonic Hall measurements.

cond-mat.mtrl-sci↗

Terahertz Phase Inversion via Field-Free Spin-Orbit Torque Switching in an Antenna-Integrated Spintronic Heterostructure

We demonstrate microsecond-timescale electrical control of the terahertz (THz) emission phase in broadband field-free spintronic THz emitters, enabling megahertz-rate phase inversion while overcoming the kilohertz limitations of conventional mechanical and field-driven approaches. Our device integrates an H-dipole antenna with a spintronic heterostructure exhibiting uniaxial magnetic anisotropy, enabling deterministic spin-orbit torque induced in-plane magnetization switching without external magnetic fields. The corresponding THz phase inversion is directly observed in the time domain signal, by applying $1\,μ\mathrm{s}$ electrical pulses on the bias striplines of the H-dipole. This field-free operation reduces system complexity while significantly extending modulation bandwidth. Our results establish electrically programmable spintronic THz emitters that could be used to develop a compact and scalable platform for integrated on-chip THz devices and ultrafast applications, including phase-sensitive spectroscopy and near-field imaging, where high-speed and precise control of THz waveforms is essential.

cond-mat.mtrl-sci↗

Fundamental picture of the conduction mechanism in solid-state polymer electrolytes revealed by terahertz spectroscopy

Solid polymer electrolytes (SPEs) based on cross-linked poly(ethylene oxide) (PEO) encompassing lithium salts have gained significant attention as separators in solid-state lithium metal batteries. Here, we employ terahertz time-domain spectroscopy (THz-TDS), as a noninvasive contact-free technique, to investigate the conduction properties of these cross-linked SPEs and unravel their dependencies on the added lithium salt and the sample temperature. The obtained THz conductivity spectra are dominated by THz absorption bands, which we attribute to resonant vibrations within the polymer matrix of the electrolyte. By careful application of Lorentz model, the conductivity spectra have been analyzed, and the relevant polymer vibration modes have been quantitatively assessed. Calculations based on the density functional theory (DFT) were performed to elucidate the possible microscopic mechanisms of these resonant vibrations. This study sheds light on the relevance of polymer matrix vibrations validating the hopping transport of lithium ions in SPEs which ultimately leads to the technologically relevant ionic conduction in the solid-state polymer-based electrolytes.

cond-mat.soft↗

Uniaxial Magnetic Anisotropy and Type-X/Y Current-Induced Magnetization Switching in Oblique-Angle-Deposited Ta/CoFeB/Pt and W/CoFeB/Pt Heterostructures

Planar current-induced magnetization switching (CIMS) driven by spin-orbit torque (SOT) requires an in-plane uniaxial magnetic anisotropy (UMA), which can be induced by oblique-angle sputter deposition of the heavy-metal underlayer in heavy-metal/ferromagnet heterostructures. To enhance the SOT efficiency, we employ trilayer heterostructures of (Ta or W)/CoFeB/Pt, where the CoFeB layer exhibits a UMA of 50 mT at 2 nm thickness of Ta or W. The magnetization reversal in Hall-bar devices is detected through unidirectional spin Hall magnetoresistance (USMR) for the type Y geometry (easy-axis transverse to current) and planar Hall measurements for the type X geometry (easy-axis parallel to current). Both configurations exhibit CIMS with sub-microsecond current pulses, reaching switching current densities as low as $2 \times 10^{11}$ A/m$^2$ for a W (4 nm)/CoFeB (1.4 nm)/Pt (2 nm) stack with a UMA of 146 mT. Macrospin simulations reproduce the type Y switching as coherent magnetization rotation, whereas the type X devices switch at much lower currents than predicted, indicating that nucleation and domain-wall propagation dominate reversal in this geometry. Our results show that combining oblique-angle deposition with easy-axis engineering enables deterministic, field-free switching, paving the way for future low-power spintronic devices.

cond-mat.mtrl-sci↗

Spin Hall effect in the high-resistivity high-entropy alloy AlCrMoW

We study thin films of the high-entropy alloy system Al$_{x}$(CrMoW)$_{1-x}$, grown on Ta seed layers by magnetron co-sputtering. Between $x=0.2$ and $x=0.6$, a resistivity larger than 100$μΩ$cm is achieved, with a peak of 180$μΩ$cm at $x=0.5$. Around the stoichiometric composition AlCrMoW, the alloy forms a bcc solid solution. The harmonic Hall method was used to characterize the spin Hall angle of the alloy series, where a maximum spin Hall angle of $θ= -0.12 \pm 0.01$ is observed for $x=0.25$. The implied spin Hall conductivity is $σ_\mathrm{SH} \approx -72\,000 \, \hbar/(2e)$\,S/m. The experimental results show excellent agreement with density functional theory calculations, which show similar trends and values. The results demonstrate that high-entropy alloys with a main-group element component can form a simple crystal structure and show high resistivity. This suggests that a whole new class of materials for spin Hall device engineering is available with simple methods.

cond-mat.mtrl-sci↗

Efficient Spintronic THz Emitters Without External Magnetic Field

We investigate the performance of state-of-the-art spintronic THz emitters (W or Ta)/CoFeB/Pt with non-magnetic underlayer deposited using oblique angle deposition. The THz emission amplitude in the presence or absence of an external magnetic field remains the same and remarkably stable over time. This stability is attributed to the enhanced uniaxial magnetic anisotropy in the ferromagnetic layer, achieved by oblique angle deposition of the underlying non-magnetic layer. Our findings could be used for the development of practical field-free emitters of linearly polarized THz radiation, potentially enabling novel applications in future THz technologies.

physics.app-ph↗

OpenFMR: A low-cost open-source broadband ferromagnetic resonance spectrometer

We describe a broadband ferromagnetic resonance spectrometer for scientific and educational applications with a frequency range up to 30 GHz. It is built with low-cost components available off-the-shelf and utilizes 3D printed parts for sample holders and support structures, and requires little assembly. A PCB design for the grounded coplanar waveguide (GCPW) is presented and analysed. We further include a software suite for command-line or script driven data acqusition, a graphical user interface, and a graphical data analysis program. The capabilities of the system design are demonstrated with measurements on ferromagnetic thin films with a thickness of 1 nm. All designs and scripts are published under the GNU GPL v3.0 license.

cond-mat.mtrl-sci↗