arXiv subjects

Tian-Hao Shao

Publications and source records attributed to Tian-Hao Shao.

3 recordsLinked to original sources

arXiv2026

Epitaxial Growth and Anomalous Hall Effect in High-Quality Altermagnetic $α$-MnTe Thin Films

The recent identification of $α$-MnTe as a candidate altermagnet has attracted considerable interest, particularly for its potential application in magnetic random-access memory. However, the development of high-quality thin films - essential for practical implementation - has remained limited. Here, we report the epitaxial growth of centimeter-scale $α$-MnTe thin films on InP(111) substrates via molecular beam epitaxy (MBE). Through X-ray diffraction (XRD) analysis, we construct a MnTe phase diagram that provides clear guidance for stabilizing the pure $α$-MnTe phase, revealing that it is favored under high Te/Mn flux ratios and elevated growth temperatures. Cross-sectional electron microscopy confirms an atomically sharp film-substrate interface, consistent with a layer-by-layer epitaxial growth mode. Remarkably, these high-quality $α$-MnTe films exhibit a pronounced anomalous Hall effect (AHE) originating from Berry curvature, despite a net magnetic moment approaching zero - a signature of robust altermagnetic character. Our work establishes a viable route for synthesizing wafer-scale $α$-MnTe thin films and highlights their promise for altermagnet-based spintronics and magnetic sensing.

cond-mat.mtrl-sci↗

arXiv2025

Non-altermagnetic spin texture in MnTe

Recently, altermagnets have emerged as promising candidates in spintronics, uniquely combining large spin-polarized electronic states with zero net magnetization. A prominent example is $α$-MnTe, whose altermagnetic spin splitting, i.e., the degeneracy lift in momentum space induced by collinear magnetic order, has been experimentally observed. However, the direct evidence of its $g$-wave spin polarization, the key property for altermagnetic spintronics, is thus far lacking. By combining high-resolution spin- and angle-resolved photoemission spectroscopy (SARPES) with first-principles calculations, we reveal a $k_z$-independent, Rashba-like spin texture in $α$-MnTe. Our results indicate that the observed spin polarization is primarily governed by spin-orbit coupling, whereas the magnetic order contributes to the splitting of energy bands but plays a much less dominant role in spin polarization due to the multi-domain nature. From this result, we further establish a way to prescreen altermagnet candidates that favor the formation of large antiferromagnetic domains based on symmetry analysis. Our work elucidates the interplay between magnetic order and spin-orbit coupling in governing spin polarization in altermagnet candidates, and thereby advances the materials design paradigm for spin-functional devices.

cond-mat.mtrl-sci↗

arXiv2024

Observation of Spin Splitting in Room-Temperature Metallic Antiferromagnet CrSb

Recently, unconventional antiferromagnets that enable the splitting of electronic spins have been theoretically proposed and experimentally realized, where the magnetic sublattices containing moments pointing at different directions are connected by a novel set of symmetries. Such spin splitting (SS) is substantial, $k$-dependent, and independent of the spin-orbit coupling strength, making these magnets promising materials for antiferromagnetic spintronics. Here, combined with angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we perform a systematic study on CrSb, a metallic spin-split antiferromagnet candidate with $T_N$ = 703 K. Our data reveals the electronic structure of CrSb along both out-of-plane and in-plane momentum directions, which renders anisotropic $k$-dependent SS and agrees well with the calculational results. The magnitude of such SS reaches up to at least 0.8 eV at non-high-symmetry momentum points, which is significantly higher than the largest known SOC-induced SS. This compound expands the choice of materials in the field of antiferromagnetic spintronics and is likely to stimulate subsequent investigations of high-efficiency spintronic devices that are functional at room temperature.

cond-mat.mtrl-sci↗