arXiv subjects

Tian-Yue Hao

Publications and source records attributed to Tian-Yue Hao.

4 recordsLinked to original sources

arXiv2026

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

cond-mat.mes-hall↗

arXiv2025

Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping

We demonstrate a switchable electron shell structure in a bilayer graphene quantum dot by manipulating the trigonal warping effect upon electrical gating. Under a small perpendicular electric field, the lowest s-shell is sequentially filled with two spin-up and two spin-down electrons of opposite valleys. When increasing the electric field, an additional three-fold minivalley degeneracy is generated so that the s-shell can be filled with 12 electrons with the first/last 6 electrons having the same spin polarization. The switched spin filling sequence demonstrates the possibility of using the trigonal warping effect to electrically access and manipulate the spin degree of freedom in bilayer graphene.

cond-mat.mes-hall↗

arXiv2024

Revealing spin-flip two-level systems using ultra-thin film superconducting resonators

Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their spins in tunneling and its impact on device performance remain highly unexplored. In this work, employing ultra-thin TiN superconducting resonators, we reveal anomalous TLS behaviors by demonstrating an unexpected increase in resonant frequency at low magnetic fields. Furthermore, a spin-flip TLS model is proposed, in which an effective spin-orbit coupling is generated by inhomogeneous local magnetic fields from defect spins. This mechanism mixes charge tunnelings and spin flips, quantitatively reproducing the observed frequency-field relationship and its temperature dependence. This work deepens the understanding of spin-dependent TLS behaviors, offering the possibility of magnetically engineering noise and loss in solid-state quantum devices.

cond-mat.mes-hall↗

arXiv2023

Coupling of hole double quantum dot in planar germanium to a microwave cavity

In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling and scaling up of qubits. Here, we demonstrate the coupling between holes in a planar germanium double quantum dot (DQD) and photons in a microwave cavity. Specifically, a real-time calibrated virtual gate method is developed to characterize this hybrid system, which in turn allows us to determine the typical parameters sequentially through single-parameter fitting instead of conventional multi-parameter fitting with additional uncertainty, and gives the hole-photon coupling rate of $g_0/2π$ = 21.7 MHz. This work is a step toward further research on hole-photon interactions and long-range qubit coupling in planar germanium. The experimental method developed in this work contributes to the more accurate and efficient characterization of hybrid cavity-QED systems.

cond-mat.mes-hall↗