arXiv subjects

Tianhui Zhu

Publications and source records attributed to Tianhui Zhu.

3 recordsLinked to original sources

arXiv2026

Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2

Point defects in atomically thin materials have a strong impact on physical properties and those that induce in-gap states are advantageous for quantum information science and engineering (QISE). However, dopant engineering consisting of well-controlled synthesis and robust identification of in-gap states is challenging. In this work, we addressed this challenge by first using finely tuned chemical vapor deposition to incorporate vanadium dopants into a monolayer WS2 (V-WS2). Next, we utilized a suite of scanned probe microscopy techniques to identify and characterize individual dopants. The latter included conductive atomic force microscopy (cAFM), low temperature scanning tunneling microscopy and spectroscopy (STM/STS), and scanning transmission electron microscopy and unambiguously revealed that vanadium dopants form deep in-gap states 0.35 eV above the valence band maximum in V-WS2. Our experimental results are well supported by first principles calculations and taken together demonstrate that V-WS2 is a promising platform for QISE applications.

cond-mat.mtrl-sci↗

arXiv2019

Electrostatic Imaging of Encapsulated Graphene

Devices made from two dimensional materials such as graphene and transition metal dichalcogenides exhibit remarkable electronic properties of interest to many subdisciplines of nanoscience. Owing to their 2D nature, their quality is highly susceptible to contamination and degradation when exposed to the ambient environment. Protecting the 2D layers by encapsulation between hexagonal boron nitride layers significantly improves their quality. Locating these samples within the encapsulant and assessing their integrity prior to further processing then becomes challenging. Here we show that conductive scanning probe techniques such as electrostatic force and Kelvin force microscopy makes it possible to visualize the encapsulated layers, their charge environment and local defects including cracks and bubbles on the sub-micrometer scale. Our techniques are employed without requiring electrical contact to the embedded layer, providing valuable feedback on the local electronic quality prior to any device etching or electrode deposition. We show that these measurement modes, which are simple extensions of atomic force microscopy, are perfectly suited for imaging encapsulated conductors and their local charge environments.

cond-mat.mes-hall↗

arXiv2019

Visualizing Encapsulated Graphene, its Defects and its Charge Environment by Sub-Micrometer Resolution Electrical Imaging

Devices made from two-dimensional (2D) materials such as graphene or transition metal dichalcogenides possess interesting electronic properties that can become accessible to experimental probes when the samples are protected from deleterious environmental effects by encapsulating them between hexagonal boron nitride (hBN) layers. While the encapsulated flakes can be detected through post-processing of optical images or confocal Raman mapping, these techniques lack the sub-micrometer scale resolution to identify tears, structural defects or impurities, which is crucial for the fabrication of high-quality devices. Here we demonstrate a simple method to visualize such buried flakes with sub-micrometer resolution, by combining Kelvin force probe microscopy (KPFM) with electrostatic force microscopy (EFM). KPFM, which measures surface potential fluctuations, is extremely effective in spotting charged contaminants within and on top of the heterostructure, making it possible to distinguish contaminated regions in the buried flake. When applying a tip bias larger than the surface potential fluctuations, EFM becomes extremely efficient in highlighting encapsulated flakes and their sub-micron structural defects. We show that these imaging modes, which are standard extensions of atomic force microscopy (AFM), are perfectly suited for locating encapsulated conductors, for visualizing nanometer scale defects and bubbles, and for characterizing their local charge environment.

cond-mat.mes-hall↗