SearcharxivSearch

arXiv subjects

Tiankuo Huang

Publications and source records attributed to Tiankuo Huang.

2 recordsLinked to original sources

Multiscale simulations guided advances for all-optical phase-change waveguides

Photonic computing using chalcogenide phase-change materials (PCMs) is under active development for energy-efficient artificial intelligence (AI) applications. A key requirement is to enable as many optically programmable levels per device as possible, while maintaining relatively low optical loss. In this work, we carry out multiscale simulations using density functional theory and finite-difference time-domain methods, proposing a "the shorter the better" strategy to optimize the performance of Sb2Te photonic waveguide devices. Our subsequent experimental characterizations of Sb2Te thin films and optical device measurements fully verify our theoretical predictions. In particular, we reveal the unconventional optical properties of metastable crystalline Sb2Te, and utilize these features for device design, yielding a simultaneous improvement in both the programming window and the optical loss. Overall, an optical programming precision exceeding 7-bit is achieved using a single waveguide cell, setting a new record for all-optical phase-change memory devices. Our work serves as a compelling example of computational material design, which demonstrates the predictive power of multiscale simulations in guiding the design of phase-change photonic devices for enhanced performance.

cond-mat.mtrl-sci

Multiscale simulations of growth-dominated Sb$_2$Te phase-change material for non-volatile photonic applications

Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb$_2$Te alloys are now gaining increasing attention for on-chip photonic applications, due to their growth-driven crystallization features. However, it remains unknown whether Sb$_2$Te also forms a metastable crystalline phase upon nanoseconds crystallization in devices, similar to the case of nucleation-driven Ge-Sb-Te alloys. Here, we carry out ab initio simulations to understand the changes in optical properties of amorphous Sb$_2$Te upon crystallization and post annealing. During the continuous transformation process, changes in the dielectric function are highly wavelength-dependent from the visible-light range towards the telecommunication band. Our finite-difference time-domain simulations based on the ab initio input reveal key differences in device output for color display and photonic memory applications upon tellurium ordering. Our work serves as an example of how multiscale simulations of materials can guide practical photonic phase-change applications.

cond-mat.mtrl-sci