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Tianle Shi

Publications and source records attributed to Tianle Shi.

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Neural Implicit Action Fields: From Discrete Waypoints to Continuous Functions for Vision-Language-Action Models

Despite the rapid progress of vision-language-action (VLA) models, the prevailing practice of predicting action chunks as discrete waypoints remains structurally misaligned with the intrinsic continuity of physical motion. This discretization arises naturally from fixed-rate robot data collection and the token-by-token prediction paradigm of large language models, but ties actions to rigid sampling rates, does not naturally support analytically consistent higher-order derivatives, and introduces quantization artifacts that hinder precise, compliant interaction. We propose Neural Implicit Action Fields (NIAF), which reformulates chunk-level action representation from discrete waypoints to continuous action functions. Using a vision-language model as a hierarchical spectral modulator over a learnable motion prior, NIAF synthesizes continuous-time action manifolds with arbitrary temporal resolution. This formulation enables analytical differentiation, allowing explicit supervision of velocity and regularization of higher-order derivative signals to promote mathematical consistency, physical plausibility, and control smoothness. Our approach achieves strong results on CALVIN and LIBERO across diverse backbones. Real-world experiments further confirm that NIAF supports stable impedance control, bridging policy-side action generation and execution-side smooth control.

cs.RO

Breaking the 800 mV open-circuit voltage barrier in antimony sulfide photovoltaics

Sb2S3 is a promising material for low-toxicity, high-stability next-generation photovoltaics. Despite high optical limits in efficiency, progress in improving its device performance has been limited by severe voltage losses. Recent spectroscopic investigations suggest that self-trapping occurs in Sb2S3, limiting the open-circuit voltage (Voc) to a maximum of approximately 800 mV, which is the level the field has asymptotically approached. In this work, we surpass this voltage barrier through reductions in the defect density in Sb2S3 thin films by modulating the growth mechanism in chemical bath deposition using citrate ligand additives. Deep level transient spectroscopy identifies two deep traps 0.4-0.7 eV above the valence band maximum, and, through first-principles calculations, we identify these to likely be S vacancies, or Sb on S anti-sites. The concentrations of these traps are lowered by decreasing the grain boundary density from 1114+/-52 nm/um2 to 585+/-10 nm/um2, and we achieve a Voc of 824 mV, the record for Sb2S3 solar cells. This work addresses the debate in the field around whether Sb2S3 is limited by defects or self-trapping, showing that it is possible to improve the performance towards the radiative limit through careful defect engineering.

cond-mat.mtrl-sci