arXiv subjects

Tianru Wu

Publications and source records attributed to Tianru Wu.

10 recordsLinked to original sources

arXiv2025

Probing Temperature at Nanoscale through Thermal Vibration Characterization using Scanning Precession Electron Diffraction

Accurate, non-contact temperature measurement with high spatial resolution is essential for understanding thermal behavior in integrated nanoscale devices and heterogeneous interfaces. However, existing techniques are often limited by the need for physical contact or insufficient spatial resolution for the measurement of local temperature and mapping its distribution. Here, we showcase the direct temperature measurement of graphene with nanometer spatial resolution in transmission electron microscopy. In experiments, combining a scanning nanobeam with precession electron diffraction offers the collection of kinemetic diffraction from a local area at the nanometer scale. In analysis, we use a pre-calculated, sample-specific structure-factor-based correction method to enable the linear fitting of the diffraction intensities, allowing the determination of the Debye-Waller factor as a function of temperature at the precision of 10-4Å2/°C. With the high spatial resolution and measurement precision, the temperature and thermal vibration mapping further reveal the influence of graphene lattice parameters and thickness on the Debye-Waller factor, providing valuable insights into the vibrational properties impacted by temperature, lattice structure, and graphene layer thickness.

cond-mat.mtrl-sci↗

arXiv2022

Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact

Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge-contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low-power operation. Here, we demonstrate that a write energy can be reduced to about ~53.7 fJ in a cell with ~3 nm-wide graphene nanoribbon (GNR) as edge-contact, whose cross-sectional area is only ~1 nm2. It is found that the cycle endurance exhibits an obvious dependence on the bias polarity in the cell with structure asymmetry. If a positive bias was applied to graphene electrode, the endurance can be extended at least one order longer than the case with reversal of polarity. The work represents a great technological advance for the low power PCRAM and could benefit for in-memory computing in future.

cond-mat.mes-hall↗

arXiv2021

Mimicing the Kane-Mele type spin orbit interaction by spin-flexual phonon coupling in graphene devices

On the efforts of enhancing the spin orbit interaction (SOI) of graphene for seeking the dissipationless quantum spin Hall devices, unique Kane-Mele type SOI and high mobility samples are desired. However, common external decoration often introduces extrinsic Rashba-type SOI and simultaneous impurity scattering. Here we show, by the EDTA-Dy molecule decorating, the Kane-Mele type SOI is mimicked with even improved carrier mobility. It is evidenced by the suppressed weak localization at equal carrier densities and simultaneous Elliot-Yafet spin relaxation. The extracted spin scattering time is monotonically dependent on the carrier elastic scattering time, where the Elliot-Yafet plot gives the interaction strength of 3.3 meV. Improved quantum Hall plateaus can be even seen after the external operation. This is attributed to the spin-flexural phonon coupling induced by the enhanced graphene ripples, as revealed by the in-plane magnetotransport measurement.

cond-mat.mes-hall↗

arXiv2020

Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride

The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub 5 nm wide zigzag and armchair GNRs embedded in hBN, respectively. Further transport measurements reveal that the sub 7 nm wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap width relationship.This integrated lateral growth of edge specific GNRs in hBN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical circuits on high quality insulating hBN substrates.

cond-mat.mes-hall↗

arXiv2018

Grain Boundaries in Chemical Vapor Deposited Atomically Thin Hexagonal Boron Nitride

Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study on the GB structures in CVD-grown polycrystalline h-BN monolayer films by transmission electron microscope. Interestingly, most of these GBs are revealed to be formed via overlapping between neighboring grains, which are distinct from the covalently bonded GBs as commonly observed in other 2D materials. Further density functional theory (DFT) calculations show that the hydrogen plays an essential role in overlapping GB formation. This work provides an in-depth understanding of the microstructures and formation mechanisms of GBs in CVD-grown h-BN films, which should be informative in guiding the precisely controlled synthesis of large area single crystalline h-BN and other 2D materials.

cond-mat.mtrl-sci↗

arXiv2017

Application of sodium-ion-based solid electrolyte in electrostatic tuning of carrier density in graphene

Using a solid electrolyte to tune the carrier density in thin-film materials is an emerging technique that has potential applications in both basic and applied research. Until now, only materials containing small ions, such as protons and lithium ions, have been used to demonstrate the gating effect. Here, we report the study of a lab-synthesised sodium-ion-based solid electrolyte, which shows a much stronger capability to tune the carrier density in graphene than previously reported lithium-ion-based solid electrolyte. Our findings may stimulate the search for solid electrolytes better suited for gating applications, taking benefit of many existing materials developed for battery research.

cond-mat.mtrl-sci↗

arXiv2017

Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride

Edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying ratio of working-gases. Edge directions were determined with the help of both moiré pattern and atomic-resolution image obtained via atomic force microscopy measurement. It is believed that the variation on graphene edges mainly attributes to different growth rates of armchair and zigzag edges. This work demonstrated here points out a potential approach to fabricate graphene ribbons on h-BN.

cond-mat.mtrl-sci↗

arXiv2017

Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.

cond-mat.mes-hall↗

arXiv2015

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 um2, about 2 orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nano-electronic applications.

cond-mat.mtrl-sci↗

arXiv2012

Triggering the Continuous Growth of Graphene toward Millimeter Size Grain

In this report, we demonstrated a simple but efficient strategy to synthesize millimeter-sized graphene single crystal grains by regulating the supply of reactants in chemical vapor deposition process. Polystyrene was used as a carbon source. Pulse heating on the carbon source was utilized to minimize the nucleation density of graphene on copper foil, while the gradual increase in the temperature of carbon source and the flow rate of hydrogen is adapted to drive the continuous growth of graphene grain. As a result, the nucleation density of graphene grain can be controlled as lower as ~100 nuclei/cm2, and the dimension of single crystal grain could grow up to ~1.2 mm. Raman spectroscopy, transmission electron microscopy and electrical transport measurement show that the graphene grains obtained are in high quality. The strategy presented here provides very good controllability and enables the possibility for large graphene single crystals, which is of vital importance for practical applications.

cond-mat.mtrl-sci↗