arXiv subjects

Tianyuan Zhu

Publications and source records attributed to Tianyuan Zhu.

10 recordsLinked to original sources

arXiv2026

Multiferroic VHfO$_4$ with Strain-Tunable Magnetism

The coexistence of ferroelectricity and magnetism in a single-phase oxide is rare because the electronic requirements for these two orders are often incompatible. Here, using first-principles calculations and parallel-tempering Monte Carlo simulations, we propose stoichiometric VHfO$_4$ as a hafnia-derived multiferroic that overcomes this constraint through ordered cation design rather than dilute magnetic doping. We found that VHfO$_4$ could stabilize in a polar $Pca2_1$-like structure with layered V/Hf ordering, remains dynamically stable, and preserves switchable ferroelectricity with a large spontaneous polarization. The ordered V sublattice introduces competing exchange interactions that favor an antiferromagnetic ground state at zero strain. Epitaxial strain further drives transitions into additional phases, including a noncollinear spiral-like state and a predominantly in-plane antiferromagnetic state. We also find that out-of-plane lattice distortions along the polar axis strongly modify the exchange interactions and magnetic phase stability, indicating a strain-mediated pathway for electric-field control of magnetism. These results establish VHfO$_4$ as a promising platform for exploring multiferroicity and magnetoelectric coupling in hafnia-based oxides.

cond-mat.mtrl-sci↗

arXiv2026

WaveDINO: Learning-Based Atmospheric Correction of Unwrapped InSAR Interferograms Validated by GNSS: Results at Laguna del Maule and Campi Flegrei Volcanoes

Interferometric Synthetic Aperture Radar (InSAR) enables effective monitoring of volcanic deformation; however, the observed signals are often corrupted by atmospheric phase delays, seasonal surface changes, and decorrelation effects. Existing atmospheric correction methods, such as numerical weather model-based methods, can reduce these effects but do not consistently remove atmospheric artefacts and may introduce residual biases. To address these limitations, we propose a novel learning-based method for denoising unwrapped InSAR interferograms, using a hybrid training strategy that combines physically motivated synthetic deformation with real atmospheric noise. Specifically, we introduce WaveDINO, a wavelet-based multi-scale denoising framework conditioned on frozen DINOv3 foundation-model features and terrain information. Training uses synthetic magma-source deformation superimposed on short-term interferograms to expose the network to realistic atmospheric statistics while retaining known ground truth. Performance is evaluated on both controlled synthetic data and long-term real interferograms from Laguna del Maule (Chile) and Campi Flegrei (Italy), with independent GNSS measurements used for validation. WaveDINO consistently outperforms competing models, improving agreement with GNSS measurements, and reducing mean GNSS misfit by approximately 3% and 19% at two sites, respectively, while surpassing weather-model-based corrections.

cs.CV↗

arXiv2026

Origin of Anomalous Size Effects in Ferroelectric Hafnia Thin Films

The persistence of ferroelectricity in ultrathin HfO$_2$ films challenges conventional theories, particularly given the paradoxical observation that the out-of-plane lattice spacing increases as the film thickness decreases, an anomalous size effect absent in perovskite ferroelectrics. Here, we resolve this puzzle by revealing that this lattice expansion is counterintuitively coupled to a suppressed out-of-plane polarization. First-principles calculations combined with analytical modeling identify two mechanisms behind this expansion: a negative longitudinal piezoelectric response to the residual depolarization field and a positive surface stress that becomes significant at reduced thickness. Their interplay quantitatively reproduces the experimentally observed lattice expansion. Furthermore, (111)-oriented HfO$_2$ films can support out-of-plane polarization even under open-circuit conditions, in contrast to (001) films that stabilize a nonpolar ground state. This behavior points to the emergence of orientation-induced hyperferroelectricity, an unrecognized mechanism that enables polarization persistence through orientation engineering without electrode screening. We further demonstrate that this principle generalizes to conventional perovskites such as PbTiO$_3$, offering a strategy to eliminate the critical thickness limit by choosing the appropriate film orientation. As a practical pathway to device integration, we also identify the two-dimensional electride Ca$_2$N as a near-ideal electrode that fully restores the ferroelectric properties of HfO$_2$ in ultrathin capacitors.

cond-mat.mtrl-sci↗

arXiv2025

Unexpected Density Functional Dependence of the Antipolar $Pbcn$ Phase in HfO$_2$

The antipolar $Pbcn$ phase of HfO$_2$ has been suggested to play an important role in the phase transition and polarization switching mechanisms in ferroelectric hafnia. In this study, we perform a comprehensive benchmark of density functional theory (DFT) calculations and deep potential molecular dynamics (DPMD) simulations to investigate the thermodynamic stability and phase transition behavior of hafnia, with a particular focus on the relationship between the $Pbcn$ and ferroelectric $Pca2_1$ phases. Our results reveal significant discrepancies in the predicted stability of the $Pbcn$ phase relative to the $Pca2_1$ phase across different exchange-correlation functionals. Notably, the PBE and hybrid HSE06 functionals exhibit consistent trends, which diverge from the predictions of the PBEsol and SCAN functionals. For a given density functional, temperature-driven phase transitions predicted by DFT-based quasi-harmonic free energy calculations aligns with finite-temperature MD simulations using a deep potential trained on the same density functional. Specifically, the PBE functional predicts a transition from $Pca2_1$ to $Pbcn$ with increasing temperature, while PBEsol predicts a transition from $Pca2_1$ to $P4_2/nmc$. A particularly striking and reassuring finding is that under fixed mechanical boundary conditions defined by the ground-state structure of $Pca2_1$, all functionals predict consistent relative phase stabilities and comparable switching barriers as well as domain wall energies. These findings underscore the unique characteristics of the $Pbcn$ phase in influencing phase transitions and switching mechanisms in ferroelectric hafnia.

cond-mat.mtrl-sci↗

arXiv2024

Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia

Hafnia-based ferroelectrics hold promise for nonvolatile ferroelectric memory devices. However, the high coercive field required for polarization switching remains a prime obstacle to their practical applications. A notable reduction in coercive field has been achieved in ferroelectric Hf(Zr)$_{1+x}$O$_2$ films with interstitial Hf(Zr) dopants [Science 381, 558 (2023)], suggesting a less-explored strategy for coercive field optimization. Supported by density functional theory calculations, we demonstrate the $Pca2_1$ phase, with a moderate concentration of interstitial Hf dopants, serves as a minimal model to explain the experimental observations, rather than the originally assumed rhombohedral phase. Large-scale deep potential molecular dynamics simulations suggest that interstitial defects promote the polarization reversal by facilitating $Pbcn$-like mobile 180$^\circ$ domain walls. A simple pre-poling treatment could reduce the switching field to less than 1 MV/cm and enable switching on a subnanosecond timescale. High-throughput calculations reveal a negative correlation between the switching barrier and dopant size and identify a few promising interstitial dopants for coercive field reduction.

cond-mat.mtrl-sci↗

arXiv2024

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Since the first report of ferroelectricity in nanoscale HfO$_2$-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and industry, and continues to do so. Despite its deceivingly simple chemical composition, the ferroelectric physics supported by HfO$_2$ is remarkably complex, arguably rivaling that of perovskite ferroelectrics. Computational investigations, especially those utilizing first-principles density functional theory (DFT), have significantly advanced our understanding of the nature of ferroelectricity in these thin films. In this review, we provide an in-depth discussion of the computational efforts to understand ferroelectric hafnia, comparing various metastable polar phases and examining the critical factors necessary for their stabilization. The intricate nature of HfO$_2$ is intimately related to the complex interplay among diverse structural polymorphs, dopants and their charge-compensating oxygen vacancies, and unconventional switching mechanisms of domains and domain walls, which can sometimes yield conflicting theoretical predictions and theoretical-experimental discrepancies. We also discuss opportunities enabled by machine-learning-assisted molecular dynamics and phase-field simulations to go beyond DFT modeling, probing the dynamical properties of ferroelectric HfO$_2$ and tackling pressing issues such as high coercive fields.

cond-mat.mtrl-sci↗

arXiv2024

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $α$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $α$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $α$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $α$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2023

Epitaxial ferroelectric hafnia stabilized by symmetry constraints

Ferroelectric memories experienced a revival in the last decade due to the discovery of ferroelectricity in HfO$_2$-based nanometer-thick thin films. These films exhibit exceptional silicon compatibility, overcoming the scaling and integration obstacles that impeded perovskite ferroelectrics' use in high-density integrated circuits. The exact phase responsible for ferroelectricity in hafnia films remains debated with no single factor identified that could stabilize the ferroelectric phase thermodynamically. Here, supported by density functional theory (DFT) high-throughput (HT) calculations that screen a broad range of epitaxial conditions, we demonstrate conclusively that specific epitaxial conditions achievable with common substrates such as yttria-stabilized zirconia (YSZ) and SrTiO$_3$ can favor the polar Pca2$_1$ phase thermodynamically over other polar phases such as R3m and Pmn2$_1$ and nonpolar P2$_1$/c phase. The substrate's symmetry constraint-induced shear strain is crucial for the preference of Pca2$_1$. The strain-stability phase diagrams resolve experiment-theory discrepancies and can guide the improvement of ferroelectric properties of epitaxial hafnia thin films.

cond-mat.mtrl-sci↗

arXiv2023

Ultrahigh oxygen ion mobility in ferroelectric hafnia

Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet studies of ferroelectrics and ionic conductors are often considered separate fields. Based on first-principles calculations and deep-learning-assisted large-scale molecular dynamics (MD) simulations, we report ferroelectric-switching-promoted oxygen ion transport in HfO$_2$, a wide-band-gap insulator with both ferroelectricity and ionic conductivity. Applying a unidirectional bias can activate multiple switching pathways in ferroelectric HfO$_2$, leading to polar-antipolar phase cycling that appears to contradict classical electrodynamics. This apparent conflict is resolved by the geometric-quantum-phase nature of electric polarization that carries no definite direction. Our MD simulations demonstrate bias-driven successive ferroelectric transitions facilitate ultrahigh oxygen ion mobility at moderate temperatures, highlighting the potential of combining ferroelectricity and ionic conductivity for the development of advanced materials and technologies.

cond-mat.mtrl-sci↗

arXiv2022

Onsite and intersite electronic correlations in the Hubbard model for halide perovskites

Halide perovskites (HPs) are widely viewed as promising photovoltaic and light-emitting materials for their suitable band gaps in the visible spectrum. Density functional theory (DFT) calculations employing (semi)local exchange-correlation functionals usually underestimate the band gaps for these systems. Accurate descriptions of the electronic structures of HPs often demand higher-order levels of theory such as the Heyd-Scuseria-Ernzerhof (HSE) hybrid density functional and GW approximations that are much more computationally expensive than standard DFT. Here, we investigate three representative types of HPs, ABX3 halide perovskites, vacancy-ordered double perovskites (VODPs), and bond disproportionated halide perovskites (BDHPs), using DFT+U+V with onsite U and intersite V Hubbard parameters computed self-consistently without a priori assumption. The inclusion of Hubbard corrections improves the band gap prediction accuracy for all three types of HPs to a similar level of advanced methods. Moreover, the self-consistent Hubbard U is a meaningful indicator of the true local charge state of multivalence metal atoms in HPs. The inclusion of the intersite Hubbard V is crucial to properly capture the hybridization between valence electrons on neighboring atoms in BDHPs that have breathing-mode distortions of halide octahedra. In particular, the simultaneous convergence of both Hubbard parameters and crystal geometry enables a band gap prediction accuracy superior to HSE for BDHPs but at a fraction of the cost. Our work highlights the importance of using self-consistent Huabbard parameters when dealing with HPs that often possess intricate competitions between onsite localization and intersite hybridization.

cond-mat.mtrl-sci↗