arXiv subjects

Tie Lin

Publications and source records attributed to Tie Lin.

5 recordsLinked to original sources

arXiv2025

Anisotropic linear magnetoresistance in nanoflakes of Dirac semimetal NiTe2

This work investigates the magneto-transport properties of exfoliated NiTe2 nano-flakes with varying thicknesses and disorder levels, unveiling two distinct physical mechanisms governing the observed anisotropic linear magnetoresistance (MR). For the perpendicular magnetic field configuration, the well-defined linear MR in high fields is unambiguously attributed to a classical origin. This conclusion is supported by the proportionality between the MR slope and the carrier mobility, and between the crossover field and the inverse of mobility. In stark contrast, the linear MR under parallel magnetic fields exhibits a non-classical character. It shows a pronounced enhancement with decreasing flake thickness, which correlates with an increasing hole-to-electron concentration ratio. This distinctive thickness dependence suggests an origin in the nonlinear band effects near the Dirac point, likely driven by the shift of the Fermi level. Furthermore, the strengthening of MR anisotropic with enhanced inter-layer transport contradicts the prediction of the guiding-center diffusion model for three-dimensional systems. Our findings highlight the critical roles of band topology and structural dimensional in the anomalous magneto-transport of Dirac semi-metals.

cond-mat.mes-hall↗

arXiv2015

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene fluoride-trifluoroethylene) ferroelectric layer in place of the oxide layer in a traditional field effect transistor. The dark current of the photodetector is strongly suppressed by ferroelectric polarization. A high detectivity 2.21012 Jones) and photoresponsitivity (2570 A W) detector has been achieved under ZERO gate bias at a wavelength of 635 nm. Most strikingly, the band gap of few-layer MoS2 can be tuned by the ultra-high electrostatic field from the ferroelectric polarization. With this characteristic, photoresponse wavelengths of the photodetector are extended into the near infrared (0.85-1.55m). A ferroelectrics optoelectronics hybrid structure is an effective way to achieve high performance 2D electronic optoelectronic devices.

cond-mat.mes-hall↗

arXiv2011

Giant-diamagnetic and magnetization-step effects in HgMnTe monocrystal

In Hg$_{1-x}$Mn$_x$Te (x$\geq$0.16) monocrystal, the giant-diamagnetic (GDM) and magnetization-step phenomena have been observed in spin glass (SG) regime. The susceptibility of GDM is about 100-1000 times than that of classic diamagnetic. It can be interpreted that: due to the long-range antiferromagnetic (AF) exchange interactions and the non-uniform random distribution of Mn$^{2+}$ ions in Hg$_{1-x}$Mn$_x$Te, a quasi-static spin wave forms and produces the GDM phenomenon below the critical temperature and magnetic field. Meanwhile, this theory is proved by Monte Carlo simulations in a two-dimensional AF cluster based on XY model. Hence, it is possible to emerge long-range magnetic order structure in SG state.

cond-mat.mtrl-sci↗

arXiv2010

Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe

Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic features such as quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, weak antilocalization effect in ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted according to Golub's model. The temperature dependence of dephasing rate is consistent with Nyquist mechanism including both singlet and triplet channel interactions.

cond-mat.mes-hall↗

arXiv2010

Gate-controlled weak antilocalization effect in inversion layer on p-type HgCdTe

We discover weak antilocalization effect of two-dimensional electron gas with one electric subband occupied in the inversion layer on p-type HgCdTe crystal. By fitting the model of Iordanskii, Lyanda-Geller and Pikus to data at varies temperatures and gate voltages, we extract phase coherence and spin-orbit scattering times as functions of temperature and carrier density. We find that Elliot-Yafet mechanism and Nyquist mechanism are the dominating spin decoherence and dephasing mechanisms, respectively. We also find that the Rashba parameter is relatively large and the dependence of Rashba parameter upon carrier density is not monotonic and an optimal carrier density exists for the maximization of spin-orbit coupling.

cond-mat.dis-nn↗