arXiv subjects

Tim Böhnert

Publications and source records attributed to Tim Böhnert.

9 recordsLinked to original sources

arXiv2026

Exploring Multifunctionality in MgO-Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

Magnetic tunnel junctions (MTJs) and memristors are two key emerging nanotechnologies that attracted significant interest for potential applications at the forefront of the digital revolution, including sensing, data storage, and non-conventional computation. The co-integration of these phenomena into a single multifunctional device is an important step toward harnessing the re-programmability of memristive systems with the high yield and varied functionality of MTJs. This study demonstrates the co-existence of magnetoresistance and memristive properties on MgO-based MTJs. These devices show a magnetoresistance with a linear response as a function of a magnetic field and no hysteresis, which are the requirements for good magnetic field sensors, as well as demonstrating a non-volatile and quasi-analogue memristive behavior as a function of an applied electrical field down to nanosecond pulses. Furthermore, by doping the oxide barrier, the memristive power consumption is lowered by 20% giving the multi-functionality of the devices a promising scalability potential. This study also shows that, memristive switching can be reversibly used to completely suppress and recover the spintronic functionalities. These results can pave the way for a seamless co-integration of memristors and spintronic devices in complex reprogrammable circuits addressing applications such as reprogrammable multifunctional field sensor arrays and neuromorphic computing.

cond-mat.mtrl-sci↗

arXiv2026

Non-Volatile Vortex MTJs with Opto-Electrical and Spin-Diode Nonlinearities as Multifunctional Neuromorphic Platforms

The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited programmability, or separate state storage from nonlinear computation. Here we demonstrate a multifunctional spintronic platform based on storage-layer-enabled vortex magnetic tunnel junctions (MTJs) that unifies non-volatile weight storage, optoelectrically driven nonlinear computation, and multilevel readout within a single nanopillar. A thermally programmable FM/AFM storage layer retains analog synaptic weights with zero standby power and enables non-volatile tuning of the vortex gyrotropic resonance over ${\sim}15$~MHz. Under optoelectrical operation, combined laser heating and dc bias drive the junction into the bias-enhanced tunnel magneto-Seebeck (bTMS) regime, where the thermoelectric response exhibits a pronounced cubic nonlinearity providing a compact, hardware-native transfer function for weighted analog computation. The electrical and thermoelectric channels switch at matched coercive fields but with distinct amplitudes, yielding an effective four-level readout space. Crossbar-array simulations parameterized by measured device response maps evaluate two neuromorphic modes -- a bTMS mode (optical input, dc-bias weights) and a spin-diode mode (RF-frequency input, RF-power weights) -- achieving image-classification accuracies of $95.4\%$ and $94.9\%$, comparable to a digital single-layer network with sigmoid activations. Smaller 600~nm devices consistently outperform larger ones, identifying nonlinear-response engineering as a key device-level lever. Because bTMS and spin-diode rectification coexist in the same junction, a combined regime could enable nonlinear multi-input interactions, including quadratic cross-terms, within a single nanoscale element.

physics.app-ph↗

arXiv2025

Hybrid Opto-Electrical Excitation of Spin-Transfer Torque Nano-Oscillators for Advanced Computing

Neuromorphic computing, inspired by the brain's parallel and energy-efficient processing, offers a transformative approach to artificial intelligence. In this study, we fabricated optimized spin-transfer torque nano-oscillators (STNOs) and investigated their dynamic behaviors using a hybrid excitation scheme combining AC laser illumination and DC bias currents. Laser-induced thermal gradients generate pulsed thermoelectric voltages ($V_{\text{AC}}$) via the Tunnel Magneto-Seebeck (TMS) effect, while the addition of bias currents enhances this response, producing both $V_{\text{AC}}$ and a DC component ($V_{\text{DC}}$). Magnetic field sweeps reveal distinct switching between parallel (P) and antiparallel (AP) magnetization states in both voltage components, supporting multistate memory applications. Millivolt-range thermovoltage signals in open-circuit conditions demonstrate CMOS compatibility, enabling simplified, scalable neuromorphic systems. Under biased conditions, enhanced thermovoltage outputs exhibit intriguing phenomena, including spikes correlated with Barkhausen jumps and double-switching behavior, offering insights into magnetization dynamics and vortex transitions. These features resemble neural spiking behavior, suggesting applications in spiking neural networks, reservoir computing, multistate logic, analog computing, and high-resolution sensing. By bridging spintronic phenomena with practical applications, this work provides a versatile platform for next-generation AI technologies and adaptive computing architectures.

physics.optics↗

arXiv2023

Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics

We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magnetic memory, logic, and signal processing. The only distinguishing factor between the two categories, denoted as A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21 Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs. Our study reveals that B-MTJs exhibit lower critical currents for auto-oscillation than A-MTJs. We found that both stacks have comparable saturation magnetization and anisotropy field, suggesting that the difference in auto-oscillation behavior is due to the higher damping of A-MTJs compared to B-MTJs. To verify this hypothesis, we employed the all-optical time-resolved magneto-optical Kerr effect (TRMOKE) technique, which confirmed that STT-MTJs with lower damping exhibited auto-oscillation at lower critical current values. Additionally, our study aimed to optimize the STT-MTJ performance by investigating the impact of the capping layer on the device's response to electronic and optical stimuli.

physics.optics↗

arXiv2017

Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study

Thermoelectric (TE) measurements have been performed on the workhorses of today's data storage devices, exhibiting either the giant or the anisotropic magnetoresistance effect (GMR and AMR). The temperature-dependent (50-300 K) and magnetic field-dependent (up to 1 T) TE power factor (PF) has been determined for several Co-Ni alloy nanowires with varying Co:Ni ratios as well as for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, which were all synthesized via a template-assisted electrodeposition process. A systematic investigation of the resistivity, as well as the Seebeck coefficient, is performed for Co-Ni alloy nanowires and Co-Ni/Cu multilayered nanowires. At room temperature, measured values of TE PFs up to 3.6 mWK-2m-1 for AMR samples and 2.0 mWK-2m-1 for GMR nanowires are obtained. Furthermore, the TE PF is found to increase by up to 13.1 % for AMR Co-Ni alloy nanowires and by up to 52 % for GMR Co-Ni/Cu samples in an external applied magnetic field. The magnetic nanowires exhibit TE PFs that are of the same order of magnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and, additionally, give the opportunity to adjust the TE power output to changing loads and hotspots through external magnetic fields.

cond-mat.mtrl-sci↗

arXiv2016

Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires

The magnetothermopower and the magnetoresistance of single Co Ni/Cu multilayered nan-owires with various thicknesses of the Cu spacer are investigated. Both kinds of measurement have been performed as a function of temperature (50 K to 325 K) and under applied magnetic fields perpendicular to the nanowire axis, with magnitudes up to 15 % at room temperature. A linear relation between thermopower S and electrical conductivity σ of the nanowires is found, with the magnetic field as an implicit variable. Combining the linear behavior of the S vs. σ and the Mott formula, the energy derivative of the resistivity has been determined. In order to extract the true nanowire materials parameters from the measured thermopower, a simple model based on the Mott formula is employed to distinguish the individual thermopower contributions of the sample. By assuming that the non-diffusive thermopower contributions of the nanowire can be neglected, it was found that the magnetic field induced changes of thermopower and resistivity are equivalent. The emphasis in the present paper is on the comparison of the magnetoresistance and magnetothermopower results and it is found that the same correlation is valid between the two sets of data for all samples, irrespective of the relative importance of the giant magnetoresistance or anisotropic magnetoresistance contributions in the various individual nanowires.

cond-mat.mtrl-sci↗

arXiv2015

Magnon contribution to the magnetoresistance of iron nanowires deposited using pulsed electrodeposition

Iron nanowires with a square cross section are grown by pulsed electrodeposition within a newly developed nanochannel template that allows for easy characterization. Measurements of the magnetoresistance as a function of magnetic field and temperature are performed within a large parameter window allowing for the investigation of the magnonic contribution to the magnetoresistance of electrodeposited iron nanowires. Values for the temperature dependent magnon stiffness D(T) are extracted.

cond-mat.mtrl-sci↗

arXiv2012

Insights into the electronic structure of Co2FeSi from x-ray magnetic linear dichroism

Experimental evidence both for and against a half-metallic ground-state of the Heusler compound Co2FeSi has been published. Density functional theory based calculations suggest a non half-metallic ground state. It has been argued, that on-site Coulomb interaction of the d electrons has to be taken into account via the LDA+U method, which predicts a half-metallic ground-state for U = 2.5...4.5 eV. X-ray magnetic linear dichroism (XMLD) can be used as a tool to assess the appropriateness of the LDA+U approach: the calculated spectra within the LDA+U or GGA+U schemes are different from those within the LDA or GGA. Due to its ability to separate different orbital symmetries, XMLD allows us to distinguish between different models of the electronic structure of Co2FeSi. In this article we discuss experimental XMLD spectra and compare them with detailed first principles calculations. Our findings give evidence for the inadequacy of the LDA+U or GGA+U band structures, whereas constrained calculations with the GGA and a fixed spin moment of 6 μ_B give better overall agreement between experiment and theory.

cond-mat.mtrl-sci↗

arXiv2011

Itinerant and local magnetic moments in ferrimagnetic Mn2CoGa thin films probed by x-ray magnetic linear dichroism: experiment and ab initio theory

Epitaxial thin films of the half-metallic Xa-compound Mn2CoGa (Hg2CuTi prototype) were prepared by dc magnetron co-sputtering with different heat treatments on MgO (001) substrates. High-quality films with a bulk magnetization of 1.95(5)μ_B per unit cell were obtained. The L3,2 x-ray magnetic circular dichroism spectra agree with calculations based on density functional theory (DFT) and reveal the antiparallel alignment of the two inequivalent Mn moments. X-ray magnetic linear dichroism, in good agreement with theory as well, allows to distinguish between itinerant and local Mn moments. Based on non-collinear spin DFT it is shown that one of the two Mn moments has local character, whereas the other Mn moment and the Co moment are itinerant.

cond-mat.mtrl-sci↗