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Timo Kuschel

Publications and source records attributed to Timo Kuschel.

At least 19 recordsLinked to original sources

Femtosecond all-optical coherent control of spin polarization in altermagnets

Altermagnets constitute an emerging materials platform for spintronic technologies by combining compensated magnetic order with ferromagnet-like spin-split electronic bands. Here, we investigate the proposed d-wave altermagnetic material RuO2 using circularly polarized ultrashort laser pulses. Time-resolved magneto-optical Kerr effect measurements, which are intrinsically sensitive to surface and interface states, reveal the ultrafast spin response of RuO2. In contrast to the demagnetization dynamics characteristic of conventional ferromagnets, we observe a distinct coherent contribution to the complex Kerr rotation that appears during the light-matter interaction and lasts for about 200 fs. Similar signatures have been associated with spin-momentum locking and directional band splitting in spin-split surface states of topological insulators as well as spin-orbit-coupled semiconductors. They are governed by a finite Raman coherence time. We interpret this coherent response as evidence for transient spin-polarized surface states in RuO2, consistent with the emergence of altermagnetic surface states that are directly relevant to spin-polarized transport at surfaces and interfaces.

cond-mat.other

Giant orbital magnetoresistance in the antiferromagnet CoO driven by dynamic orbital angular momentum interaction

Recent predictions of orders of magnitude larger orbital current effects compared to spin currents have attracted significant interest. However, the full potential of giant orbital currents remains to be fully harnessed, since so far, the orbital currents need to be converted into spin currents before they can interact with the static magnetization that is dominated by spin angular momentum in conventional magnets. By using a magnet dominated by orbital angular momentum, we demonstrate a more than fifty-fold enhancement in orbital Hall magnetoresistance in CoO/Cu*, compared to conventional CoO/Pt. This is found to be driven by a unique interaction between dynamic orbital angular momentum from surface oxidized Cu* (i.e., the orbital current) and the static orbital angular momentum which constitutes the magnetic moments in the antiferromagnetic insulator CoO. A distinctive scattering mechanism for orbital currents at the CoO interface leads to a sign reversal in orbital magnetoresistance in CoO/Cu* compared to CoO/Pt. Our results show how by using orbital angular momentum-dominated materials such as CoO, we can harness the benefits of giant orbital currents that have not been possible using conventional spin-dominated magnets, for orbitronics-based devices, offering unprecedented energy efficiency for operations of antiferromagnets that combine ultimate stability with THz dynamics.

cond-mat.mtrl-sci

Cubic magneto-optic Kerr effect in Co(111) thin films

The magneto-optic Kerr effect (MOKE) is often applied as a tool for the magnetic characterization of thin films. Here, the change in polarization upon reflection from the magnetized sample is mainly regarded as being linearly proportional to the magnetization $\mathbf{M}$ (LinMOKE). MOKE contributions of second order in $\mathbf{M}$, also known as quadratic MOKE (QMOKE), which are proportional to $\mathbf{M}^2$, have also been studied in the past and used in thin film characterization. Recently, we reported on a systematic investigation of third-order MOKE contributions, named cubic MOKE (CMOKE) in Ni(111) thin films. This CMOKE manifests itself as an anisotropic contribution to the MOKE signal (with regard to the crystallographic orientation) measured in longitudinal or transversal configuration in full magnetic saturation. While LinMOKE (odd in $\mathbf{M}$) and QMOKE (even in $\mathbf{M}$) can easily be separated by methods based on magnetization parity, this no longer holds true for LinMOKE and CMOKE (odd in $\mathbf{M}$). It is therefore crucial to be aware of CMOKE contributions in order to correctly interpret MOKE data. Here, we report on the observation of CMOKE in thin film heterostructures with structurally twinned and untwinned Co(111) layers, demonstrating that a large CMOKE is not only present in Ni thin films. Additionally, we show that the observed anisotropic contributions cannot stem from LinMOKE by analyzing their dependence on the angle of incidence (AoI) of light. While the QMOKE is almost vanishing in Co(111) using light with wavelengths of 635\,nm and 406\,nm, the CMOKE contributions reach up to about 30\% of the LinMOKE contribution at an AoI of 45 degrees and become even more dominant towards normal AoI, which emphasizes the importance of higher-order MOKE effects in magneto-optic experiments.

physics.optics

Cubic-in-magnetization contributions to the magneto-optic Kerr effect investigated for Ni(001) and Ni(111) thin films

*The abstract of this article is too long to be included in the arXiv metadata; please see the paper for the full abstract.* ...In this paper, we introduce the detailed theory of cubic-in-magnetization magneto-optic Kerr effect (CMOKE) by deriving the magneto-optic tensor of third order in magnetization, denoted as $\bm{H}$, and comparing the strength of CMOKE for different crystal orientations theoretically and experimentally. In crystals with cubic symmetry, the tensor $\bm{H}$ is described by two independent parameters $H_{123}$ and $H_{125}$. Together with the linear magneto-optic tensor $\bm{K}$ and quadratic magento-optic tensor $\bm{G}$, the permittivity tensor is described up to third order in magnetization. We analytically describe equations of the MOKE including the contribution of QMOKE and CMOKE itself for (001)- and (111)-oriented cubic crystal structures. Those are compared to experimental measurements of two samples with an (001)- and (111)-oriented fcc Ni layer, respectively. Further, we use Yeh's 4$\times$4 transfer matrix calculus to simulate and describe the experimental measurements phenomenologically from the permittivity tensor up to third order in $\bm{M}$. We find that the MOKE anisotropy that stems from the magneto-optic tensor $\bm{H}$ described as $\Delta H = H_{123}-3H_{125}$, is much more pronounced for the (111)-oriented cubic crystal structure, for which it manifests as three-fold in-plane angular dependencies of MOKE with longitudinal and also with transversal magnetization direction, respectively.

physics.optics

Emergence of a spin Hall topological Hall effect in the non-collinear phase of the ferrimagnetic insulator terbium-iron garnet

Magnetic compensation in rare-earth iron garnets (REIGs) offers a unique setting for which competing sublattice moments can give rise to non-collinear (canted) magnetic configurations, in which the sublattice magnetizations are not aligned with each other or with the external magnetic field. We show that this compensation regime can also host non-trivial magnetic textures. To explore this behavior, we investigated (111)-oriented epitaxial Tb$_3$Fe$_5$O$_{12}$/Pt heterostructures across the compensation temperature region using combined transverse magneto-transport and polar Kerr microscopy. Notably, we observe a topological Hall-like signal in the vicinity of the compensation temperature, a feature often interpreted as evidence for skyrmions in the absence of direct imaging. Here, in contrast, complementary Kerr microscopy reveals instead a non-collinear multidomain state which collapses outside the compensation regime, correlating directly with the appearance and disappearance of the spin Hall topological Hall effect (SH-THE) signal. These observations cannot be accounted for by a simple multi-anomalous-Hall-effect model, ruling out common artifacts as the origin, but indicate the presence of a topologically non-trivial contribution to the Hall response. These results establish strained REIG films as a tunable platform for exploring topological responses arising from compensation-driven non-collinear ferrimagnetic phases.

cond-mat.mtrl-sci

Surface-Localized Magnetic Order in RuO2 Thin Films Revealed by Low-Energy Muon Probes

Ruthenium dioxide (RuO2) has recently emerged as a candidate altermagnet, yet its intrinsic magnetic ground state, particularly in thin films, remains debated. This study aims to clarify the nature and spatial extent of the magnetic order in RuO2 thin films grown under different conditions. Thin films of RuO2 with thicknesses of 30 nm and 33 nm are fabricated by pulsed laser deposition and sputtering onto TiO2(110) and Al2O3(1-102) substrates, respectively. Low-energy muon spin rotation/relaxation (LE-muSR) with depth-resolved sensitivity measurements is performed in transverse magnetic fields (TF) from 4 K to 290 K. The muSR data collected with a muon implantation energy of 1 keV reveal that magnetic signals originate from the near-surface region of the film (<10 nm), and the affected volume fraction is at most about 8.5%. The localized magnetic response is consistent across different substrates, growth techniques, and parameter sets, suggesting a common origin related to surface defects and dimensionality effects. The combined use of TF-muSR and the study of depth-dependent implantation with low-energy muons provides direct evidence for surface-confined, inhomogeneous static magnetic order in RuO2 thin films, helping reconcile discrepancies. These findings underscore the importance of considering reduced-dimensional contributions and motivate further investigation into the role of defects, strain, and stoichiometry on the magnetic properties of RuO2, especially at the surface.

cond-mat.mes-hall

Depth Profiling of Oxygen Migration in Ta/HfO2 Stacks During Ionic Liquid Gating

Ionic liquid (IL) gating has emerged as a powerful tool to control the structural, electronic, optical, and magnetic properties of materials by driving ion motion at solid interfaces. In magneto-ionic systems, electric fields are used to move ions, typically oxygen, from a donor layer into an underlying magnetic metal. Although oxygen distribution is key to enabling precise and stable control in magneto-ionic systems, the spatial distribution and voltage-dependence of oxygen incorporation in such nanoscale stacks remain unknown. Here, we quantify oxygen depth profiles and oxide formation in Si/ SiO2/ Ta (15)/ HfO2 (t) films after IL gating as a function of the gate voltage and HfO2 capping thickness (2 and 3 nm). X-ray reflectivity and X-ray photoelectron spectroscopy measurements revealed a threshold electric field of ~ -2.8 MV/cm to initiate oxygen migration from HfO2 into metallic Ta. The resulting Ta2O5 thickness increases linearly with gate voltage, reaching up to 4 nm at -3 V gating. Notably, the required electric field rises with oxide thickness, indicating a progressively growing barrier for thicker oxide films. The Ta/Ta2O5 interface remains atomically sharp for all gate voltages. This suggests that complete Ta2O5 layers form sequentially before further oxygen penetration, with no sign of deeper diffusion into bulk Ta. Thinner capping layers enhance oxidation, relevant for optimized stack design. Additionally, indium migration from the indium tin oxide electrode to the sample surface was observed, which should be considered for surface-sensitive applications. These insights advance design principles for magneto-ionic and nanoionic devices requiring precise interface engineering.

cond-mat.mtrl-sci

Surface Oxidation of SnTe Analyzed by Self-Consistent Fitting of all Emission Peaks in its X-ray Photoelectron Spectrum

X-ray photoelectron spectroscopy (XPS) is among the most widely used methods for surface characterization. Currently, the analysis of XPS data is almost exclusively based on the main emission peak of a given element and the rest of the spectrum is discarded. This makes quantitative chemical state analyses by peak fitting prone to substantial error, especially in light of incomplete and flawed reference literature. However, most elements give rise to multiple emission peaks in the x-ray energy range, which are virtually never analyzed. For samples with an inhomogeneous depth distribution of chemical states, these peaks show different but interdependent ratios of signal components, as they correspond to different information depths. In this work, we show that self-consistent fitting of all emission peaks lends additional reliability to the depth profiling of chemical states by angular-resolved (AR-)XPS. We demonstrate this using a natively oxidized thin film of the topological crystalline insulator tin telluride (SnTe). This approach is not only complementary to existing depth profiling methods, but may also pave the way towards complete deconvolution of the XPS spectrum, facilitating a more comprehensive and holistic understanding of the surface chemistry of solids.

cond-mat.mes-hall

Angle-Dependent Magnetoresistance Induced by Interface-Generated Spin Current in RuO$_2$/Permalloy Heterostructures

Altermagnets, a recently discovered class of magnetic materials exhibiting ferromagnetic-like spin-split bands and antiferromagnetic-like compensated magnetic order, have attracted significant interest for next-generation spintronic applications. Ruthenium dioxide (RuO2) has emerged as a promising altermagnetic candidate due to its compensated antiparallel magnetic order and strong spin-split electronic bands. However, recent experimental and theoretical reports also suggest that RuO2 may be non-magnetic in its ground state, underscoring the need for deeper investigations into its magnetic character. Specifically, the (100)-oriented RuO2 films are expected to generate spin currents with transverse spin polarization parallel to the N\'eel vector. Here, we investigate magnetotransport in epitaxial RuO2/Permalloy (Py) heterostructures to examine spin Hall magnetoresistance and interfacial effects generated in such systems. Our measurements reveal a pronounced negative angular-dependent magnetoresistance for variation of magnetic field direction perpendicular to the charge current direction. Detailed temperature-, magnetic field-, and crystallographic orientation-dependent measurements indicate that interface-generated spin current (IGSC) at the RuO2/Py interface predominantly governs the observed magnetoresistance. This shows that strong interface effects dominate over possible altermagnetic contributions from RuO2. Our results show that the role of interface-generated spin currents is crucial and should not be overlooked in studies of altermagnetic systems. A critical step in this direction is disentangling interfacial from altermagnetic contributions. The insight into interfacial contributions from altermagnetic influences is essential for the advancement of RuO2 based spintronic memory and sensing applications.

cond-mat.mes-hall

Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics

Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.

cond-mat.mtrl-sci

Cubic magneto-optic Kerr effect in Ni(111) thin films with and without twinning

In most studies utilizing the magneto-optic Kerr effect (MOKE), the detected change of polarized light upon reflection from a magnetized sample is supposed to be proportional to the magnetization $\boldsymbol{M}$. However, MOKE signatures quadratic in $\boldsymbol{M}$ have also been identified and utilized, e.g., to sense the structural order in Heusler compounds, to detect spin-orbit torques or to image antiferromagnetic domains. In our study, we observe a strong anisotropic MOKE contribution of third order in $\boldsymbol{M}$ in Ni(111) thin films, attributed to a cubic magneto-optic tensor $\propto $ $\boldsymbol{M}^3$. We further show that the angular dependence of cubic MOKE (CMOKE) is affected by the amount of structural domain twinning in the sample. Our detailed study on CMOKE for two selected photon energies will open up new opportunities for CMOKE applications with sensitivity to twinning properties of thin films, e.g. CMOKE spectroscopy and microscopy or time-resolved CMOKE.

physics.optics

Structural and magnetic investigation of the interfaces of $\mathrm{Fe_3O_4/MgO(001)}$ with and without NiO interlayer

We present an investigation on the structural and magnetic properties of the interfaces of $\mathrm{Fe_3O_4/MgO(001)}$ and $\mathrm{Fe_3O_4/NiO/MgO(001)}$ by extracting cation-selective magnetooptical depth profiles by means of x-ray magnetic reflectivity (XRMR) in combination with charge-transfer multiplet simulations of x-ray magnetic circular dichroism (XMCD) data. For $\mathrm{Fe_3O_4/MgO(001)}$, the magnetooptical depth profiles at the $\mathrm{Fe^{2+}_{oct}}$ and the $\mathrm{Fe^{3+}_{oct}}$ resonant energies follow exactly the structural profile, while the magnetooptical depth profile at the $\mathrm{Fe^{3+}_{tet}}$ resonance is offset by $3.2\pm1.3\,$\r{A} from the interface, consistent with a B-site interface termination of $\mathrm{Fe_3O_4}$ with fully intact magnetic order. In contrast, for $\mathrm{Fe_3O_4/NiO(001)}$, the magnetooptical depth profiles at the $\mathrm{Fe^{2+}_{oct}}$ and the $\mathrm{Ni^{2+}}$ resonances agree with the structural profile, but the interface positions of the magnetooptical depth profiles at the $\mathrm{Fe^{3+}_{oct}}$ and the $\mathrm{Fe^{3+}_{tet}}$ resonances are laterally shifted by $3.3\pm 1.4\,$\r{A} and $2.7\pm0.9\,$\r{A}, respectively, not consistent with a magnetically ordered stoichiometric interface. This may be related to an intermixed $\mathrm{(Ni,Fe)O}$ layer at the interface. The magnetooptical depth profiles at the Ni $L_3$ edge reveal uncompensated magnetic moments throughout the NiO film.

cond-mat.mes-hall

Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems

We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and unidirectional spin Hall magnetoresistance (USMR) is achieved by introducing the second heavy metal (HM) with the opposite sign of the spin Hall angle. The extracted SOT efficiencies are larger for the trilayers as compared to the bilayers, confirming the enhanced values reported for the trilayers with perpendicularly magnetized Co. The maximum effective spin Hall angle found for the Pt/Co/Ta trilayer reaches $\theta_{SH}$ = 20%. The USMR of the trilayer yields up to 27% higher effect as for the respective bilayers with the largest effective USMR amplitude of -0.32 $\times$ 10$^{-5}$ for the Pt/Co/Ta trilayer at a charge current density of 10$^{7}$ A/cm$^2$.

cond-mat.mes-hall

Role of NiO in the nonlocal spin transport through thin NiO films on Y$_3$Fe$_5$O$_{12}$

In spin transport experiments with spin currents propagating through antiferromagnetic (AFM) material, the antiferromagnet is treated as a mainly passive spin conductor not generating nor adding any spin current to the system. The spin current transmissivity of the AFM NiO is affected by magnetic fluctuations, peaking at the N\'eel temperature and decreasing by lowering the temperature. In order to study the role of the AFM in local and nonlocal spin transport experiments, we send spin currents through NiO of various thickness placed on Y$_3$Fe$_5$O$_{12}$. The spin currents are injected either electrically or by thermal gradients and measured at a wide range of temperatures and magnetic field strengths. The transmissive role is reflected in the sign change of the local electrically injected signals and the decrease in signal strength of all other signals by lowering the temperature. The thermally generated signals, however, show an additional upturn below 100$\,$K which are unaffected by an increased NiO thickness. A change in the thermal conductivity could affect these signals. The temperature and magnetic field dependence is similar as for bulk NiO, indicating that NiO itself contributes to thermally induced spin currents.

cond-mat.mes-hall

Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers

The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measurements combined with angle-dependent magnetotransport studies. To reveal intermixing effects as the possible cause for induced magnetic moments in Pt, we compare thin film heterostructures with different order of the layer stacking and different interface properties. For standard Pt layers on Y$_{3}$Fe$_{5}$O$_{12}$ thin films, we do not detect any static magnetic polarization in Pt. These samples show an angle-dependent magnetoresistance behavior, which is consistent with the established spin Hall magnetoresistance. In contrast, for the inverted layer sequence, Y$_{3}$Fe$_{5}$O$_{12}$ thin films grown on Pt layers, Pt displays a finite induced magnetic moment comparable to that of all-metallic Pt/Fe bilayers. This magnetic moment is found to originate from finite intermixing at the Y$_{3}$Fe$_{5}$O$_{12}$/Pt interface. As a consequence, we found a complex angle-dependent magnetoresistance indicating a superposition of the spin Hall and the anisotropic magnetoresistance in these type of samples. Both effects can be disentangled from each other due to their different angle dependence and their characteristic temperature evolution.

cond-mat.mtrl-sci

Quantitative comparison of the magnetic proximity effect in Pt detected by XRMR and XMCD

X-ray resonant magnetic reflectivity (XRMR) allows for the simultaneous measurement of structural, optical and magnetooptic properties and depth profiles of a variety of thin film samples. However, a same-beamtime same-sample systematic quantitative comparison of the magnetic properties observed with XRMR and x-ray magnetic circular dichroism (XMCD) is still pending. Here, the XRMR results (Pt L$_{3}$ absorption edge) for the magnetic proximity effect in Pt deposited on the two different ferromagnetic materials Fe and Co$_{33}$Fe$_{67}$ are compared with quantitatively analyzed XMCD results. The obtained results are in very good quantitative agreement between the absorption-based (XMCD) and reflectivity-based (XRMR) techniques taking into account an ab initio calculated magnetooptic conversion factor for the XRMR analysis. Thus, it is shown that XRMR provides quantitative reliable spin depth profiles important for spintronic and spin caloritronic transport phenomena at this type of magnetic interfaces.

cond-mat.mtrl-sci

Cation- and lattice-site-selective magnetic depth profiles of ultrathin $\mathrm{Fe_3O_4}$(001) films

A detailed understanding of ultrathin film surface properties is crucial for the proper interpretation of spectroscopic, catalytic and spin-transport data. We present x-ray magnetic circular dichroism (XMCD) and x-ray resonant magnetic reflectivity (XRMR) measurements on ultrathin $\mathrm{Fe_3O_4}$ films to obtain magnetic depth profiles for the three resonant energies corresponding to the different cation species $\mathrm{Fe^{2+}_{oct}}$, $\mathrm{Fe^{3+}_{tet}}$ and $\mathrm{Fe^{3+}_{oct}}$ located on octahedral and tetrahedral sites of the inverse spinel structure of $\mathrm{Fe_3O_4}$. By analyzing the XMCD spectrum of $\mathrm{Fe_3O_4}$ using multiplet calculations, the resonance energy of each cation species can be isolated. Performing XRMR on these three resonant energies yields magnetic depth profiles that correspond each to one specific cation species. The depth profiles of both kinds of $\mathrm{Fe^{3+}}$ cations reveal a $\mathrm{3.9 \pm 1~\r{A}}$-thick surface layer of enhanced magnetization, which is likely due to an excess of these ions at the expense of the $\mathrm{Fe^{2+}_{oct}}$ species in the surface region. The magnetically enhanced $\mathrm{Fe^{3+}_{tet}}$ layer is additionally shifted about $\mathrm{3\pm 1.5~\r{A}}$ farther from the surface than the $\mathrm{Fe^{3+}_{oct}}$ layer.

cond-mat.mes-hall

Advanced data analysis procedure for hard x-ray resonant magnetic reflectivity discussed for Pt thin film samples of various complexity

X-ray resonant magnetic reflectivity (XRMR) is a powerful method to determine the optical, structural and magnetic depth profiles of a variety of thin films. Here, we investigate samples of different complexity all measured at the Pt L$_3$ absorption edge to determine the optimal procedure for the analysis of the experimental XRMR curves, especially for nontrivial bi- and multilayer samples that include differently bonded Pt from layer to layer. The software tool ReMagX is used to fit these data and model the magnetooptic depth profiles based on a highly adaptable layer stack which is modified to be a more precise and physically consistent representation of the real multilayer system. Various fitting algorithms, iterative optimization approaches and a detailed analysis of the asymmetry ratio features as well as $\chi^2$ (goodness of fit) landscapes are utilized to improve the agreement between measurements and simulations. We present a step-by-step analysis procedure tailored to the Pt thin film systems to take advantage of the excellent magnetic sensitivity and depth resolution of XRMR.

cond-mat.mtrl-sci