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Timo Veslin

Publications and source records attributed to Timo Veslin.

2 recordsLinked to original sources

Divergent Coherent Phonon Responses Across the Metal-Insulator Crossover

Ultrafast laser control of material properties hinges on understanding light-matter interactions. We use two experimentally accessible response functions, laser fluence induced phonon softening and the amplitude of coherent reflectance oscillations, to compare how strongly different materials respond to ultrafast photoexcitation. Comparing a diverse set of materials, we find that only a narrow class, including Sb, GeTe, and Bi2Te3, shows exceptional responses such as pronounced phonon softening and a giant increase of reflectance oscillations with increasing fluence. These response functions peak in an intermediate conductivity regime of about 102 - 104 S/cm, at the crossover between localized and delocalized electronic states. The corresponding class of solids also shows other unconventional properties including high dielectric constants, enhanced Born effective charges, coordination numbers exceeding the 8-N rule and uncommon bond rupture. This suggests that these materials employ a unique bonding mechanism, coined metavalent bonding. Frozen-phonon DFT calculations show that the strong fluence dependence arises from Peierls-like instabilities, leading to large deformation potentials and anharmonic double-well potentials. These findings identify metavalent bonding as a design principle for enhanced coherent phonon control and provide a quantitative framework for identifying materials with exceptional ultrafast responses.

cond-mat.mtrl-sci

Robust Material Properties in Epitaxial In$_2$Te$_3$ Thin Films Across Varying Thicknesses

Sesqui-chalcogenides serve as a critical bridge between traditional semiconductors and quantum materials, offering significant potential in applications such as thermoelectrics, phase change memory, and topological insulators. While considerable attention has been focused on antimony- and bismuth-based compounds, characterized by substantial property changes upon reduction in film thickness, indium containing sesqui-chalcogenides like In$_2$Te$_3$ are emerging as promising candidates for photovoltaics and electronic devices. However, the effects of film thickness on the properties of In$_2$Te$_3$ remain largely unexplored. In this study, we investigate high-quality In$_2$Te$_3$ thin films grown by molecular beam epitaxy on Si(111) substrates across a thickness range from 2.7 nm to 24 nm. We employ X-ray diffraction, reflective high-energy electron diffraction and atomic force microscopy to analyze both the crystal structure and film morphology. Additionally, we utilize broadband optical spectroscopy alongside femtosecond pump-probe measurements and Raman spectroscopy to assess optical and vibrational properties, respectively. Our analysis reveals that material properties exhibit minimal dependence on film thickness, contrasting sharply with behavior observed in other chalcogenides such as Sb$_2$Te$_3$, Bi$_2$Se$_3$, or GeTe. This phenomenon can be attributed to covalent bonding present in In$_2$Te$_3$, which differs from those in its antimony- and bismuth-containing counterparts.

cond-mat.mtrl-sci