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Timothy J. Lyon

Publications and source records attributed to Timothy J. Lyon.

3 recordsLinked to original sources

Intrinsic spin-orbit coupling gap and the evidence of a topological state in graphene

In 2005 Kane & Mele[C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)], predicted that at sufficiently low energy, graphene exhibits a topological state of matter with an energy gap generated by the atomic spin-orbit interaction. However, this intrinsic gap has not been measured to this date. In this letter, we exploit the chirality of the low energy states to resolve this gap. We probe the spin states experimentally, by employing low temperature microwave excitation in a resistively detected electron spin resonance on graphene. The structure of the topological bands is reflected in our transport experiments, where our numerical models allow us to identify the resonance signatures. We determine the intrinsic spin-orbit bulk gap to be exactly 42.2 μeV. Electron-spin resonance experiments can reveal the competition between the intrinsic spin-orbit coupling and classical Zeeman energy that arises at low magnetic fields and demonstrate that graphene remains to be a material with surprising properties.

cond-mat.mes-hall

Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond

We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.

cond-mat.mtrl-sci

Probing Electron Spin Resonance in Monolayer Graphene

The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.

cond-mat.mtrl-sci