arXiv subjects

Tina Salguero

Publications and source records attributed to Tina Salguero.

3 recordsLinked to original sources

arXiv2026

A Quieter State of Charge -- Ultra-Low-Noise Collective Current in Charge-Density-Wave Nanowires

Electronic flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices. There is a strong need for unconventional materials and strategies for achieving ultra-low-noise performance in nanoscale and quantum electronics. Here, we demonstrate that in nanowires of the quasi-one-dimensional, fully gapped charge-density-wave material (TaSe4)2I, low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors. When the current is dominated by the sliding Frohlich condensate, the normalized noise spectral density decreases linearly with current, I -- a striking departure from the constant value observed in conventional conductors. No residual minimum noise level is reached for the current of the electron-lattice condensate in (TaSe4)2I nanowires. Repeating the measurements for another charge-density wave conductor, NbS3-II, we found a similar reduction below the normal electron limit at room temperature. Our findings signal intrinsically lower current fluctuations within a correlated electron transport regime.

cond-mat.str-el↗

arXiv2025

Quantum Spin Singlet and Classical Néel-Ordered Ground States in MoX3 (X = I, Br) Spin-3/2 Dimerized Antiferromagnetic Chain Crystals

We report that MoX3 (X = I, Br) are rare van der Waals materials that exhibit signatures of both quantum spin chains with a spin singlet ground state and classical Neel order. Bulk single crystals grown by chemical vapor transport exhibit classical antiferromagnetic ground states with a transition temperature of ~40 K as revealed by susceptibility and specific heat measurements. Above 40 K, the susceptibilities show the large, broad peaks associated with a quantum spin-singlet ground state and large singlet-triplet gaps of 21 meV and 25 meV. Monte Carlo simulations, density matrix renormalization-group calculations for finite spin-3/2 chains, and density functional theory reproduce the experimental behavior, confirming the interplay between strong one-dimensional intrachain and weak three-dimensional interchain couplings. MoX3 offers a unique platform for exploring quantum magnetism and magnetic excitations at the atomic chain limit, as these materials combine a 1D van der Waals motif, spin chain behavior, and classical interchain order.

cond-mat.str-el↗

arXiv2025

Giant Gate Response of the Charge in an Electron-Lattice Condensate

Efficient electrical capacitive control is important for the next generation of ultra-low-power and ultra-fast electronics and energy-storage devices. Correlated electronic phases offer a powerful route to enhancing field-effect control beyond the limits of conventional capacitive gating. In such systems, modest gate voltages can couple to an order parameter, producing responses far larger than expected from the electrostatics of non-interacting carriers. It was demonstrated that electron-electron interactions, in which the exchange and correlation energies among electrons lower the chemical potential of an electron system as the electron density increases, can significantly increase the effective capacitance over its geometric capacitance value. Here, we show that the electron-lattice or electron-phonon correlations in charge density wave (CDW) condensate can lead to a giant gate response with the corresponding capacitance enhancement. This unusual phenomenon is demonstrated in the quasi-one-dimensional CDW material, where the gate-induced change in CDW charge density exceeds predictions based on geometrical gate capacitance by one to two orders of magnitude. This "giant gating" effect arises from the coupling of the electric field to the CDW electron-lattice condensate, demonstrating a mechanism for massively amplifying gate response via collective electronic behavior. We quantify the effect by determining the quantum capacitance of the CDW charge and by constructing a band diagram for the gated CDW device. The obtained results can lead to an alternative strategy for continuing the downscaling of the transistor feature size in electronic technology.

cond-mat.str-el↗