arXiv subjects

Ting-Hsun Yang

Publications and source records attributed to Ting-Hsun Yang.

3 recordsLinked to original sources

arXiv2025

In-Plane Field induced Quantized Longitudinal Conductivity in Magnetic Topological Insulators

We report the discovery of an in plane quantization (IPQ) state in trilayer magnetic topological insulators, characterized by a quantized longitudinal conductivity of e2/h under strong in-plane magnetic fields. This state emerges at a quantum critical point separating quantum anomalous Hall phases tuned by field angle and orientation, directly linking gap-closing behavior to quantized criticality. Temperature and gate dependent transport measurements, supported by a self consistent approximation model, reveal that electron hole puddles dominate charge transport in this regime, highlighting the essential role of impurity disorder in stabilizing quantized critical transport. These findings establish a tunable experimental framework that connects gap-closing physics with universal conductivity, offering both microscopic insight into critical transport in magnetic topological insulators and a robust platform for probing quantum criticality in topological systems.

cond-mat.mes-hall↗

arXiv2024

Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator

Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic field. A giant switched anomalous Hall resistance of 9.2 $kΩ$ is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to $2.8\times10^5 A/cm^2$. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to $1.56\pm 0.12 T/ (10^6 A/cm^2)$ and the interfacial charge-to-spin conversion efficiency to $3.9\pm 0.3 nm^{-1}$. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices.

cond-mat.mes-hall↗

arXiv2023

Pressure tunable quantum anomalous Hall states in a topological antiferromagnet

Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the effect of hydrostatic pressure on quantized Chern states in the antiferromagnetic topological insulator MnBi2Te4, using transport as a probe. We show that pressure can enhance the robustness of quantum anomalous Hall (QAH) phases that are otherwise delicate in 7SL MnBi2Te4 and in the spin-flop (SF) state of 8SL MnBi2Te4. We explain our findings using a coupled Dirac cone model of MnBi2Te4, which identifies stronger hybridization between van der Waals layers as the driver of topological states. We further demonstrate that moderate pressures readily available in laboratory systems can provide reversible control of magnetic and topological phases. Our results reveal a strong connection between the mechanical engineering of band topology and magnetism.

cond-mat.mes-hall↗