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Ting-Ran Liu

Publications and source records attributed to Ting-Ran Liu.

4 recordsLinked to original sources

Revealing buried ferroelectric topologies by depth-resolved electron diffraction imaging

Nanoscale topological polar textures promise new functionalities for ferroelectric memories and logic, yet their three-dimensional structure and mesoscale organization remain experimentally inaccessible. Here we introduce depth-resolved electron diffraction imaging (DREDI), a fast, non-destructive, method that maps polarization with <50 nm lateral and <10 nm depth sensitivity within fraction of a second. Its high acquisition speed enables the first continuous polarization mapping across six orders of magnitude in length scale, from nanometers to millimeters. Using epitaxial BiFeO3 films, DREDI reveals a hidden depth evolution of polar textures: surface 71-degree stripes evolve into subsurface flux-closure vortices that bifurcate into three-fold vertices near the bottom interface. Cross-sectional multi-slice electron ptychography and phase-field modeling confirm these buried configurations and attribute them to strain heterogeneity and ferroelastic twinning in the SrRuO3 electrode. Large-area analysis further shows that vertex-like frustration forms a mesoscale percolating network above a critical length scale of 4 um. DREDI enables real-time, volumetric studies of buried topological textures in ferroic nanomaterials.

cond-mat.mtrl-sci

Spatially modulated morphotropic phase boundaries in a compressively strained multiferroic thin film

The coexisting rhombohedral-like (R', MA) and tetragonal-like (T', MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R'/T' twins, their self-organizing structures remain not fully explored. Here, we observed two types of interphase boundaries in a 60 nm-thick BiFeO3 film epitaxially grown on a LaAlO3 substrate by employing multi-modal diffraction-based electron microscopy. First, the flat MPBs form lines extending >1 mm, and repeat almost every ~20 um. Additionally, we uncover a new type of phase boundary with zig-zag regions of alternating R'/R' and T'/T' twin domains. Cross-sectional multislice electron ptychography confirms the atomic-scale polarization rotation across the MPB, with out-of-plane strain varying >15%. Plan-view electron backscatter diffraction reveals the lattice disclination of ~1.5-degrees across the zig-zag interphase boundaries, while having >2.5 degrees within the MPB. Phase-field modeling suggests that the formation of zig-zag phase boundaries arises from balancing between Landau and elastic energies. We speculate that such well-ordered interphase boundaries are associated with mesoscale in-plane strain modulations, thus providing a way to engineer and harness their properties for potential device applications.

cond-mat.mtrl-sci

Topology-Driven Vibrations in a Chiral Polar Vortex Lattice

The ordering of magnetic or electric dipoles leading to real-space topological structures is at the forefront of materials research as their quantum mechanical nature often lends itself to emergent properties. Atomic lattice vibrations (phonons) are often a key contributor to the formation of long-range dipole textures based on ferroelectrics and impact the properties of the emergent phases. Here, using monochromated, momentum-resolved electron energy-loss spectroscopy (qEELS) with nanometer spatial resolution and meV-spectral-precision, we demonstrate that polar vortex lattices in PbTiO$_3$ spatially modulate the material's vibrational spectrum in patterns that directly reflect the overlying symmetry of the topological patterns. Moreover, by combining experiments with molecular dynamics simulations using machine learned potentials we reveal how these structures modify phonon modes across the vibrational spectrum. Beyond simple intensity modulation, we find that the chirality of the vortex topology imparts its unique symmetry onto phonons, producing a distinctive asymmetrical spectral shift across the vortex unit cell. Finally, the high spatial resolution of the technique enables topological defects to be probed directly, demonstrating a return to trivial PbTiO$_3$ modes at vortex dislocation cores. These findings establish a fundamental relationship between ferroelectric-ordering-induced topologies and phonon behavior, opening new avenues for engineering thermal transport, electron-phonon coupling, and other phonon-mediated properties in next-generation nanoscale devices.

cond-mat.mtrl-sci

Kinetic control of ferroelectricity in ultrathin epitaxial Barium Titanate capacitors

Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have often been indirect due to confounding factors such as leakage in the direct electrical measurements. Recent interest in low-voltage switching electronic devices squarely puts the focus on ultrathin limits of ferroelectricity in an electronic device form, specifically on the robustness of ferroelectric characteristics such as retention and endurance for practical applications. Here, we illustrate how manipulating the kinetic energy of the plasma plume during pulsed laser deposition can yield ultrathin ferroelectric capacitor heterostructures with high bulk and interface quality, significantly low leakage currents and a broad "growth window". These heterostructures venture into previously unexplored aspects of ferroelectric properties, showcasing ultralow switching voltages ($<$0.3 V), long retention times ($>$10$^{4}$s), and high endurance ($>$10$^{11}$cycles) in 20 nm films of the prototypical perovskite ferroelectric, BaTiO$_{3}$. Our work demonstrates that materials engineering can push the envelope of performance for ferroelectric materials and devices at the ultrathin limit and opens a direct, reliable and scalable pathway to practical applications of ferroelectrics in ultralow voltage switches for logic and memory technologies.

physics.app-ph