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Tingli He

Publications and source records attributed to Tingli He.

9 recordsLinked to original sources

Topological Interstitial-Electron Conductor

Electron transport in solids arises primarily from two mechanisms: freely moving bulk electrons in metals, and gapless boundary states in topological insulators. Here, we report a new mechanism discovered in electrides. The topological interstitial-electron conductors (TIECs) proposed here are insulating electrides, but host interstitial electrons (IEs) distributed within crystal voids that traverse the entire unit cell. Without being tightly bound to real ions, the IEs generally experience low periodic potential barrier along the void channels. As a consequence, by applying a weak electric field sufficient to overcome the IE barriers but far below the system's dielectric breakdown threshold, one can expect that the TIECs would generate a persistent current contributed by the IEs and propagating along the void channels. We identify a family of realistic altermagnetic electrides, $A_5X_3$ ($A$ = Ca, Sr, Ba, Yb; $X$ = As, Sb), as TIECs. Remarkably, for $A_5X_3$ materials, the periodic potential barrier of the IEs along the void channels are ultralow, ranging from 13.43 to 67.96 meV per formula unit. This renders our proposal readily accessible to experimental verification. We further demonstrate that when the IEs of $A_5X_3$ undergo periodic motion along the channels, topological surface states will emerge at the boundary perpendicular to the channel direction, and continuously move across the bulk band gap. This pumping-like behaviour not only corroborates the topological nature of TIECs, but also rationalizes the finite-electric-field induced electronic transport within the band theory. Our findings expand the classification of electronic conductors, uncover unexplored transport properties of electrides, and establish a new material platform for low-power electronic devices.

cond-mat.mtrl-sci

Pressure-Induced Superconducting-like Transition in the $\it d$-wave Altermagnet Candidate CsV$_2$Se$_2$O

Altermagnetism generates exchange-type spin splitting without net magnetization and, in its $\it d$-wave form, resembles the angular symmetry of unconventional $\it d$-wave superconductivity. Whether this correspondence bears directly on superconducting instabilities in real correlated materials remains open. Here we study the quasi-two-dimensional vanadium oxychalcogenide CsV$_2$Se$_2$O (CVSO), a square-net $\it d$-wave altermagnet candidate, through combined experimental and theoretical investigation of its lattice structure, electronic structure and transport properties. At ambient pressure, CVSO is a weakly insulating parent state with a density-wave-like anomaly near 100 K, and its bulk properties are most consistent with a G-type compensated antiferromagnetic background. Under compression, the density-wave-like feature is suppressed, the magnetoresistance evolves from predominantly negative to positive, and a superconducting-like resistive downturn emerges below about 3 K. This low-temperature anomaly is reproducible across samples and pressure media, and is suppressed by magnetic field. Room-temperature X-ray diffraction reveals no symmetry lowering, whereas does show a pronounced compressibility anomaly over the same pressure range. CVSO thus reveals a pressure-tuned phase diagram in which a reconstructed weakly insulating parent state gives way to strange-metal-like transport and superconducting-like behavior, echoing broader phenomenology associated with unconventional superconductors, including cuprates and nickelates.

cond-mat.supr-con

Type-II Antiferroelectricity

Antiferroelectricity (AFE) is a fundamental concept in physics and materials science. Conventional AFEs have the picture of alternating local electric dipoles defined in real space. Here, we discover a new class of AFEs, termed type-II AFEs, which possess opposite polarizations defined in momentum space across a pair of symmetry decoupled subspaces. Unlike conventional AFEs, the order parameter of type-II AFEs is rigorously formulated through Berry-phase theory and can be quantitatively extracted from the electronic band structure. Focusing on a subclass of type-II AFEs that preserve spin-rotation symmetry, we establish the relevant symmetry constraints and identify all compatible spin point groups. Remarkably, we find that type-II AFE order intrinsically coexists with antiferromagnetism, revealing a robust form of magnetoelectric coupling. We construct an altermagnetic model and identify several concrete antiferromagnetic/altermagnetic materials, such as FeS, Cr2O3, MgMnO3, monolayer MoICl2 and bilayer CrI3, that exhibit this novel ordering. Furthermore, we uncover unique physical phenomena associated with type-II spin-AFE systems, including spin current generation upon AFE switching and localized spin polarization at boundaries and domain walls. Our findings reveal a previously hidden class of quantum materials with intertwined ferroic orders, offering exciting opportunities for both fundamental exploration and technological applications.

cond-mat.mtrl-sci

Quasi-one-dimensional spin transport in altermagnetic $Z^3$ nodal net metals

In three dimensions, quasi-one-dimensional (Q1D) transport has traditionally been associated with systems featuring a Q1D chain structure. Here, based on first-principle calculations, we go beyond this understanding to show that the Q1D transport can also be realized in certain three-dimensional (3D) altermagnetic (AM) metals with a topological nodal net in momentum space but lacking Q1D chain structure in real space, including the existing compounds $\beta$-Fe$_2$(PO$_4$)O, Co$_2$(PO$_4$)O, and LiTi$_2$O$_4$. These materials exhibit an AM ground state and feature an ideal crossed $Z^3$ Weyl nodal line in each spin channel around Fermi level, formed by three straight and flat nodal lines traversing the entire Brillouin zone. These nodal lines eventually lead to an AM $Z^3$ nodal net. Surprisingly, the electronic conductivity $\sigma_{xx}$ in these topological nodal net metals is dozens of times larger than $\sigma_{yy}$ and $\sigma_{zz}$ in the up-spin channel, while $\sigma_{yy}$ dominates transport in the down-spin channel. This suggests a distinctive Q1D transport signature in each spin channel, and the principal moving directions for the two spin channels are orthogonal, resulting in Q1D direction-dependent spin transport. This novel phenomenon cannot be found in both conventional 3D bulk materials and Q1D chain materials. In particular, the Q1D spin transport gradually disappears as the Fermi energy moves away from the nodal net, further confirming its topological origin. Our work not only enhances the comprehension of topological physics in altermagnets but also opens a new direction for the exploration of topological spintronics.

cond-mat.mtrl-sci

Magnetic Real Chern Insulator in 2D Metal-Organic Frameworks

Real Chern insulators have attracted great interest, but so far, their material realization is limited to nonmagnetic crystals and to systems without spin-orbit coupling. Here, we reveal magnetic real Chern insulator (MRCI) state in a recently synthesized metal-organic framework material Co3(HITP)2. Its ground state with in-plane ferromagnetic ordering hosts a nontrivial real Chern number, enabled by the C2zT symmetry and robust against spin-orbit coupling. Distinct from previous nonmagnetic examples, the topological corner zero-modes of MRCI are spin-polarized. Furthermore, under small tensile strains, the material undergoes a topological phase transition from MRCI to a magnetic double-Weyl semimetal phase, via a pseudospin-1 critical state. Similar physics can also be found in closely related materials Mn3(HITP)2 and Fe3(HITP)2, which are also existing. Possible experimental detections and implications of an emerging magnetic flat band in the system are discussed.

cond-mat.mtrl-sci

Ideal fully spin-polarized type-II nodal line state in half-metals X2YZ4 (X=K, Cs, Rb, Y=Cr, Cu, Z=Cl, F)

Lorentz-violating type-II nodal lines exhibit attracting physical properties and have been hot discussed currently. However, their investigations have been mostly limited in nonmagnetic system because of lacking ideal spin-polarized candidates with clean type-II nodal line states. Here, for the first time, we report the family of X2YZ4 (X=K, Cs, Rb, Y=Cr, Cu, Z=Cl, F) compounds are such ideal candidate materials by using the member of K2CuF4 as an example. We show the material is a ferromagnetic half-metal with weak anisotropy, which host fully spin-polarized conducting electrons. In the conducting spin channel, the band crossing form a pair of type-II nodal lines, protected by mirror symmetry. These type-II nodal lines are different with former proposed examples because they have a 100% spin polarization. In addition, we also show the material can realize switchable topological states, which can be easily controlled by external magnetic field. It is noticed that, the material: i) is stable and can be synthesized in experiments; ii) has clear magnetic structure; and iii) manifests clean type-II nodal line state and clear drumhead surface states. Therefore, the proposed X2YZ4 compounds are expected to be an excellent platform to investigate the novel physical properties of both type-II nodal line states with complete

cond-mat.mtrl-sci

Ferromagnetic hybrid nodal loop and switchable type-I and type-II Weyl fermions in two-dimension

As a novel type of fermionic state, hybrid nodal loop with the coexistence of both type-I and type- II band crossings has attracted intense research interest. However, it remains a challenge to realize hybrid nodal loop in both two-dimensional (2D) materials and in ferromagnetic (FM) materials. Here, we propose the first FM hybrid nodal loop in 2D CrN monolayer. We show that the material has a high Curie temperature (> 600 K) FM ground state, with the out-of-plane [001] magnetization. It shows a half-metallic band structure with two bands in the spin-up channel crossing each other near the Fermi level. These bands produce both type-I and type-II band crossings, which form a fully spin-polarized hybrid nodal loop. We find the nodal loop is protected by the mirror symmetry and robust against spin-orbit coupling (SOC). An effective Hamiltonian characterizing the hybrid nodal loop is established. We further find the configuration of nodal loop can be shifted under external perturbations such as strain. Most remarkably, we demonstrate that both type-I and type-II Weyl nodes can be realized from such FM hybrid nodal loop by simply shifting the magnetization from out-of-plane to in-plane. Our work provides an excellent candidate to realize FM hybrid nodal loop and Weyl fermions in 2D material, and is also promising for related topological applications with their intriguing properties.

cond-mat.mtrl-sci

Structure, phase stability, half-metallicity, and fully spin-polarized Weyl states in compound NaV2O4: a new example for topological spintronic material

Here, we systematically investigate the structure, phase stability, half-metallicity, and topological electronic structure for a new topological spintronic material NaV2O4. The material has a tetragonal structure with excellent dynamical and thermal stabilities. It shows a half-metallic ground state, where only the spin-up bands present near the Fermi level. These bands form a Weyl nodal line close to the Fermi level, locating in the kz = 0 plane. The nodal line is robust against SOC, under the protection of the mirror symmetry. The nodal line band structure is very clean, thus the drumhead surface states can be clearly identified. Remarkably, the nodal line and drumhead surface states have the 100% spin polarization, which are highly desirable for spintronics applications. In addition, by shifting the magnetic field in-plane, we find that the Weyl nodal line can transform into single pair of Weyl nodes. The Weyl-line and Weyl-node fermions in the bulk, as well as the drumhead fermions on the surface are all fully spin-polarized, which may generate new physical properties and promising applications.

cond-mat.mtrl-sci

Mn2C monolayer: hydrogenation/oxygenation induced strong room-temperature ferromagnetism and potential applications

Two-dimensional ferromagnetic materials with strong ferromagnetism and high Curie temperature are significantly desired for the applications of nanoscale devices. Here, based on first-principles computations, we report hydrogenated/oxygenated Mn2C monolayer is a such material with strong room-temperature ferromagnetism. The bare Mn2C monolayer is an antiferromagnetic metal with the local magnetic moment of Mn ~ 3μB. However, the antiferromagnetic coupling of Mn atoms can transform into the ferromagnetic order under hydrogenation/oxygenation. Especially, the magnetic moments in hydrogenated/oxygenated Mn2C monolayer can be as large as 6 μB per unit cell, and the Curie temperatures are above 290K. Beside the potential applications in spintronic devices, our work suggests that Mn2C monolayer is also promising to be used in hydrogen/oxygen detection and removal devices.

cond-mat.mtrl-sci