arXiv subjects

Tingyong Chen

Publications and source records attributed to Tingyong Chen.

7 recordsLinked to original sources

arXiv2026

Theory of Andreev reflection spectroscopy with anisotropic spin-dependent scattering

Spintronic technologies require efficient generation and control of spin-polarized currents. Conventional ferromagnet-based methods suffer from sensitivity to external magnetic fields. Andreev reflection spectroscopy is vital for measuring spin polarization and superconducting gaps, yet prevailing theories assume isotropic interface scattering. This neglects ubiquitous anisotropy in heterostructures, causing misinterpretation of material properties. To resolve this, we develop a generalized model incorporating spin-dependent anisotropic scattering. Introducing distinct interface barriers for spin-up and spin-down electrons extends both the Blonder-Tinkham-Klapwijk formalism and the Chen-Tesanovic-Chien extension. This unified framework describes transport from normal metals to half-metals. Solving the Bogoliubov-de Gennes equations with modified boundary conditions yields current formulae with a transmission probability judgment function identifying dominant spin channels. In non-magnetic metals, interfacial anisotropy generates sizable spin-polarized currents via transmission spin filtering, suppressing Andreev reflection and reducing sub-gap conductance. For positively polarized ferromagnets, anisotropy nonlinearly modulates polarization, enhancing Andreev reflection to a threshold before suppression. Negatively polarized materials exhibit inverse spectra, enabling unambiguous polarization sign determination via conductance comparisons. Epitaxial Co film measurements validate the model, resolving subtle anisotropies. This refines Andreev spectrum interpretation and supports interference-resistant spin sources using non-magnetic platforms, benefiting magnetoresistive devices and superconducting quantum technologies.

cond-mat.mes-hall↗

arXiv2024

Coupler-Assisted Leakage Reduction for Scalable Quantum Error Correction with Superconducting Qubits

Superconducting qubits are a promising platform for building fault-tolerant quantum computers, with recent achievement showing the suppression of logical error with increasing code size. However, leakage into non-computational states, a common issue in practical quantum systems including superconducting circuits, introduces correlated errors that undermine QEC scalability. Here, we propose and demonstrate a leakage reduction scheme utilizing tunable couplers, a widely adopted ingredient in large-scale superconducting quantum processors. Leveraging the strong frequency tunability of the couplers and stray interaction between the couplers and readout resonators, we eliminate state leakage on the couplers, thus suppressing space-correlated errors caused by population propagation among the couplers. Assisted by the couplers, we further reduce leakage to higher qubit levels with high efficiency (98.1%) and low error rate on the computational subspace (0.58%), suppressing time-correlated errors during QEC cycles. The performance of our scheme demonstrates its potential as an indispensable building block for scalable QEC with superconducting qubits.

quant-ph↗

arXiv2024

Observation of Complete Orbital Two-channel Kondo Effect in van der Waals Ferromagnet Fe3GaTe2

Orbital two-channel Kondo (2CK) effect is one of the crucial systems with non- Fermi liquid (NFL) behaviors. But the full three-regime transport evidence has never been observed in one sample. Here, all three-resistive regimes for the orbital 2CK effect induced by two-level systems (TLSs) have been observed in the van der Waals ferromagnet Fe3GaTe2. The electron behavior undergoes a continuous transition from electron scattering to the NFL behavior, and subsequently to Fermi liquid behavior. The magnetic field does not affect any regimes, indicating the non-magnetic origin of the TLSs in Fe3GaTe2. In addition, the slope of linear negative magnetoresistance, rather than the topological Hall effect, has been found to be related to spin-magnon scattering and can be used to infer the emergence of spin textures. Our findings indicate Fe3GaTe2 may be an ideal platform to study electron-correlation and topological phenomena.

cond-mat.str-el↗

arXiv2024

Near-Room-Temperature Field-Controllable Exchange Bias in 2D van der Waals Ferromagnet Fe3GaTe2

Exchange bias (EB) is a cornerstone of modern magnetic memory and sensing technologies. Its extension to the realm of two-dimensional (2D) van der Waals (vdW) magnets holds promise for revolutionary advancements in miniaturized and efficient atomic spintronic devices. However, the blocking temperature of EB in 2D vdW magnets is currently well below room temperature ~130 K. This study reports a robust EB phenomenon in Fe3GaTe2 thin-layer devices, which significantly increases the blocking temperature to a near-room-temperature record of 280 K. Both the bias direction and magnitude can be isothermally tuned by adjusting the field sweep range, in striking contrast to the conventional EB in ferromagnetic/antiferromagnetic (FM/AFM) bilayers. We propose an exchange spring model in which crystal defects with higher coercivity act as the pivotal pinning source for the observed EB phenomenon, deviating from the conventional FM/AFM interface mechanism. Cumulative growth of minor loops and multiple magnetization reversal paths are observed in field cycles below the saturation field, consistent with the hard FM defects behavior of our exchange spring model. These findings provide insights into the complex magnetic order in 2D ferromagnets and open new avenues for developing practical ultrathin vdW spintronic devices with EB-like properties at room temperature.

cond-mat.mes-hall↗

arXiv2023

Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film

In the absence of time-reversal invariance, metals without inversion symmetry may exhibit nonreciprocal charge transport -- a magnetochiral anisotropy that manifests as unequal electrical resistance for opposite current flow directions. If superconductivity also sets in, the charge transmission may become dissipationless in one direction while remaining dissipative in the opposite, thereby realizing a superconducting diode. Through both direct-current and alternating-current measurements, we study the nonreciprocal effects in thin films of the noncentrosymmetric superconductor T$_d$-MoTe\textsubscript{2} with disorders. We observe nonreciprocal superconducting critical currents with a diode efficiency close to 20\%~, and a large magnetochiral anisotropy coefficient up to $\SI{5.9e8}{\per\tesla\per\ampere}$, under weak out-of-plane magnetic field in the millitesla range. The great enhancement of rectification efficiency under out-of-plane magnetic field is likely abscribed to the vortex ratchet effect, which naturally appears in the noncentrosymmetric superconductor with disorders. Intriguingly, unlike the finding in Rashba systems, the strongest in-plane nonreciprocal effect does not occur when the field is perpendicular to the current flow direction. We develop a phenomenological theory to demonstrate that this peculiar behavior can be attributed to the asymmetric structure of spin-orbit coupling in T$_d$-MoTe\textsubscript{2}. Our study highlights how the crystallographic symmetry critically impacts the nonreciprocal transport, and would further advance the research for designing the superconducting diode with the best performance.

cond-mat.supr-con↗

arXiv2022

Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number

Numerous attempts have been made so far to explore the quantum anomalous Hall effect (QAHE), but the ultralow observed temperature strongly hinders its practical applications. Hence, it is of great interest to go beyond the existing paradigm of QAHE. Here, we propose that Floquet engineering offers a strategy to realize the QAHE via hybridization of Floquet-Bloch bands. Based on first-principles calculations and Floquet theorem, we unveil that nonequilibrium valley-polarized QAHE (VP-QAHE), independent of magnetic orders, is widely present in ferromagnetic and nonmagnetic members of two-dimensional family materials $M$Si$_2$$Z_4$ ($M$ = Mo, W, V; $Z$ = N, P, As) by irradiating circularly polarized light (CPL). Remarkably, by tuning the frequency, intensity, and handedness of incident CPL, the Chern number of VP-QAHE is highly tunable and up to $\mathcal{C}=\pm 4$. We reveal that such Chern number tunable VP-QAHE attributes to light-induced trigonal warping and multiple band inversion at different valleys. The valley-resolved chiral edge states and quantized plateau of Hall conductance, which facilitates the experimental measurement, are visible inside the global band gap. Our work not only establishes Floquet Engineering of nonequilibrium VP-QAHE with tunable Chern number in realistic materials, but also provides a promising avenue to explore emergent topological phases under light irradiation.

cond-mat.mes-hall↗

arXiv2017

Above 400 K Robust Perpendicular Ferromagnetic Phase in a Topological Insulator

The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However, in transition-metal doped TI, the only experimentally demonstrated QAHE system to date, the effect is lost at practically relevant temperatures. This constraint is imposed by the relatively low Curie temperature (Tc) and inherent spin disorder associated with the random magnetic dopants. Here we demonstrate drastically enhanced Tc by exchange coupling TI to Tm3Fe5O12, a high-Tc magnetic insulator with perpendicular magnetic anisotropy. Signatures that the TI surface states acquire robust ferromagnetism are revealed by distinct squared anomalous Hall hysteresis loops at 400 K. Point-contact Andreev reflection spectroscopy confirms that the TI surface is indeed spin-polarized. The greatly enhanced Tc, absence of spin disorder, and perpendicular anisotropy are all essential to the occurrence of the QAHE at high temperatures.

cond-mat.mtrl-sci↗