arXiv subjects

Tingyu Zhou

Publications and source records attributed to Tingyu Zhou.

4 recordsLinked to original sources

arXiv2026

Large magnetoresistance and weak-antilocalization in the nodal-line semimetal VP2

After growing successfully high quality VP$_2$ single crystals, we studied systematically their longitudinal $\rho_{xx}(T)$ and Hall resistivity $\rho_{yx}(T)$ at various magnetic fields, combining the electronic band and Fermi surface (FS) calculations. Band calculations reveal that VP$_2$ is a type-II nodal-line semimetal, evidenced by the Hall resistivity measurements. It is found that the magnetoresistance (MR) at higher magnetic fields exhibits a linear behavior and does not show any sign of saturation, reaching 170\% at 40 K up to 9 T, which is determined by the intrinsic electronic structure and dominated by the Lorenz force, demonstrated by the resistivity anisotropy measurements and the numerical simulations. We also found that the existence of small amount magnetic impurities (V$^{4+}$, $S=1/2$, 2.24\%) results in Kondo effect emerging in $\rho_{xx}(T)$, the conductivity at lower magnetic fields exhibits a typical weak anti-localization (WAL) behavior. These results illustrate that VP$_2$ is a platform to study the electronic transport properties of a topological material containing magnetic impurities.

cond-mat.str-el↗

arXiv2025

Topological nontrivial berry phase in altermagnet CrSb

The study of topological properties in magnetic materials has long been one of the forefront research areas in condensed matter physics. CrSb, as a prototypical candidate material for altermagnetism, has attracted significant attention due to its unique magnetic properties. This system provides a novel platform for exploring the intrinsic relationship between altermagnetic order and exotic topological states. In this study, we combine systematic electrical transport experiments with first-principles calculations to investigate the possible realization mechanisms of topological semimetal states in CrSb and their manifestations in quantum transport phenomena. Our high field magneto-transport measurements reveal that the magnetoresistance of CrSb exhibits no sign of saturation up to 35 T, following a distinct power-law dependence with an exponent of 1.48. The nonlinear Hall resistivity further indicates a multiband charge transport mechanism. Under high magnetic fields, we observe pronounced Shubnikov-de Haas (SdH) quantum oscillations and discernible Zeeman-effect-induced band splitting at 1.6 K. Systematic Fermi surface and band calculations combined with Berry phase analysis confirm the nontrivial topological character of this material (with a Berry phase approaching {\pi}). These findings not only provide crucial experimental evidence for understanding the electronic structure of CrSb, but also establish an important foundation for investigating topological quantum states in altermagnets.

cond-mat.mtrl-sci↗

arXiv2024

Universal Scaling Behavior of Transport Properties in Non-Magnetic RuO$_{2}$

As a prototypical altermagnet, RuO$_{2}$ has been subject to many controversial reports regarding its magnetic ground state and the existence of crystal Hall effects. We obtained high-quality RuO$_{2}$ single crystal with a residual resistivity ratio (RRR = 152), and carefully measured its magnetization, longitudinal resistivity ($ρ_{xx}$) and Hall resistivity ($ρ_{yx}$) up to 35 T magnetic field. We also calculated its electronic band, Fermi surface, and conducted numerical simulations for its transport properties. It was found that no magnetic transition occurs below 400 K, and that all the transport properties are consistent with the numerical simulations results, indicating that the magnetotransport properties originate from the intrinsic electronic structures and are dominated by the Lorentz force. Particularly, no crystal Hall effects were observed in our RuO$_{2}$ samples and both magnetoresistance and Hall resistivity follow scaling behavior. These results demonstrate that RuO$_{2}$ is a typical semimetal, rather than an altermagnet.

cond-mat.mtrl-sci↗

arXiv2024

Scaling Behavior of Magnetoresistance and Hall Resistivity in Altermagnet CrSb

The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to exhibit substantial spin splitting near the Fermi level. After successfully growing high-quality CrSb single crystals, we performed comprehensive magnetization, magnetoresistance (MR), and Hall resistivity measurements, along with the electronic structure, and Fermi surface (FS) calculations, as well as the magneto-transport property numerical simulations. An antiferromagnetic transition occurring at $T_{N}$ = 712 K was reconfirmed. It was found that both experimental MR and Hall resistivity are consistent with the numerical simulation results, and exhibit obvious scaling behavior. The nonlinear Hall resistivity is due to its multi-band structure, rather than an anomalous Hall effect (AHE). Especially, the scaling behavior in Hall resistivity is first observed within an AM material. These findings demonstrate that the magneto-transport properties in CrSb originate from the intrinsic electronic structure and are dominated by the Lorentz force.

cond-mat.mtrl-sci↗