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Titus Bornträger

Publications and source records attributed to Titus Bornträger.

2 recordsLinked to original sources

Arithmetic Packing on Wide Integer Datapaths in DSP Primitives of Modern FPGA Devices

Deep Neural Networks increasingly employ low-precision quantization to reduce computational requirements. While FPGAs are well suited for workloads with heterogeneous precisions, their dedicated digital signal processing (DSP) slices only feature fixed-width datapaths that are significantly underutilized by low-bitwidth arithmetic. While previous approaches have already introduced the packing of multiple values onto the same wide DSP datapath, they either only support specific fixed bitwidths or are wasteful regarding the use of additional support logic external to the DSP. This paper proposes an efficient method to dynamically pack multiple (un-)signed inputs with arbitrary bitwidths into a wide multiplier path by leveraging the DSP's internal pre-adder. Building on this, we present two distinct architectures, one optimized for matrix-vector multiplications and the other for convolutions. Our implementations are integrated into AMD's FINN framework. With these optimizations, we reduce the LUT utilization by 21% and increase the FPS/DSP by 36% for the UltraNet model compared to the FINN reference.

cs.AR↗

On the experimental properties of the TS defect in 4H-SiC

When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect level. They reveal that the three occurring spectral signatures TS1, TS2 and TS3 originate from one single defect. Their polarization dependences expose three different crystallographic orientations in the basal plane, which relate to the projections of the nearest neighbor directions. Accordingly, we find a three-fold level-splitting in ensemble studies, when applying mechanical strain. This dependency is quantitatively calibrated. A complementary electrical measurement, deep level transient spectroscopy, reveals a charge transition level of the TS defect at 0.6 eV above the valence band. For a future identification, this accurate characterization of its optical and electronic properties along with their response to mechanical strain is a milestone.

physics.app-ph↗