arXiv subjects

Tixuan Tan

Publications and source records attributed to Tixuan Tan.

14 recordsLinked to original sources

arXiv2026

Skyrmion Fractional Chern Insulator: An Intrinsically Multiband Route to Fractionalization in Rhombohedral Graphene

We propose an unconventional microscopic origin for the fractional quantum anomalous Hall (FQAH) effect in rhombohedral graphene moir\'e superlattices: skyrmion fractionalization. We view the state at filling $\nu<1$ as a metal of skyrmion vacancies, charge $+e$ objects formed by removing layer-pseudospin skyrmions from the interaction-generated skyrmion lattice Chern insulator at $\nu=1$. These vacancies are intrinsically multiband degrees of freedom, absent in single Chern band-projected studies. Building on a recently proposed ideal limit, we first develop an effective field theory showing that skyrmion vacancies can themselves fractionalize, thereby inducing charge fractionalization. Focusing on $\nu=\frac{2}{3}$, we then construct explicit variational trial wavefunctions for the resulting skyrmion fractional Chern insulator and provide numerical evidence, together with general arguments, showing that this process is energetically favored. Our results establish a realistic route to the FQAH that does not rely on a partially filled Chern band, but instead arises from fractionalization of collective pseudospin textures.

cond-mat.mes-hall↗

arXiv2026

Visualizing orbital magnetism in electron doped rhombohedral multilayer graphene

Electron doped rhombohedral multilayer graphene at high displacement field features an exceptionally flat band minimum with near-ideal quantum geometry. Experiments in this regime observe the formation of a 'quarter metal,' in which the electron liquid condenses into a single spin- and valley flavor. Remarkably, recent experiments have found a zero resistance state in the same region of the density- and displacement-field-tuned parameter space, attributed to the formation of a chiral superconductor from an orbitally ferromagnetic normal state. Here, we use nanoSQUID-on-tip magnetometry to map the orbital magnetization of electron-doped rhombohedral graphene devices ranging in thickness between 3 and 15 layers. Magnetization within the quarter metal phases peaks at finite density, consistent with concentration of the Berry curvature in a finite-momentum 'ring of fire'. Correlating transport and local magnetometry data in a superconducting tetralayer sample reveals a finite orbital ferromagnetic moment, providing direct evidence of valley polarization in the superconducting ground state. We further show that widely observed stochastic switching of the resistivity in both metallic and superconducting regimes arises from a density-tuned sign change in the valley-resolved total magnetic moment. This leads to the formation of metastable magnetic domains under typical gate control sequences and can also be harnessed for electric-field controlled switching of the magnetization across the entire device. Finally, high resolution measurements of the magnetization across a superconducting transition allow us to put an upper bound on the 'condensation magnetization' of 0.1 Bohr magneton per carrier, placing a strong quantitative restriction on theoretical models for ferromagnetic superconductivity.

cond-mat.mes-hall↗

arXiv2025

The ideal limit of rhombohedral graphene: Interaction-induced layer-skyrmion lattices and their collective excitations

We introduce an ideal limit of rhombohedral graphene multilayers. In this limit, we show analytically how short-range repulsion stabilizes a layer-pseudospin skyrmion lattice, which generates an effective magnetic field and gives rise to a Chern band. This establishes the real-space origin of interaction-driven topology in moir\'e rhombohedral graphene. The resulting interaction-induced skyrmion lattice is physically analogous to magnetic skyrmion crystals and hosts a hierarchy of collective excitations naturally described within the framework of skyrmion-lattice dynamics.

cond-mat.mes-hall↗

arXiv2025

Nonvolatile Switching of Magnetism via Gate-Induced Sliding in Tetralayer Graphene

Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases, which are absent in conventional Bernal stacking. Here, we demonstrate a sliding-induced first-order structural phase transition between Bernal and rhombohedral tetralayer graphene driven by gate voltages. Through transport measurement, we observe bistable switching between a Bernal-dominant state and a rhombohedral-Bernal mixed state across a wide space of the gate-voltage phase diagram. The structural phase transition results in nonvolatile switching between a paramagnet and a ferromagnet accompanied by the anomalous Hall effect. The sign reversal of the anomalous Hall effect under opposite displacement fields suggests that it may originate from domain boundaries between the Bernal and rhombohedral regions. Our discovery paves the way for on-demand toggling of quantum phases based on the sliding phase transition of 2D materials and offers a playground to explore unconventional physics at the stacking domain boundaries.

cond-mat.mes-hall↗

arXiv2024

Fractional Chern mosaic in supermoir\'e graphene

We propose the realization of a fractional Chern mosaic: a state characterized by a spatially varying topological order. This state is enabled by a separation of length scales that emerges when three graphene sheets are sequentially rotated by a small twist angle. The resulting structure features not only conventional moir\'e lattices, but also a much larger supermoir\'e lattice. We demonstrate that a fractional Chern mosaic arises when electron correlations induce fractionalization locally on the moir\'e scale, while the pattern of fractionalization varies at the supermoir\'e scale.

cond-mat.str-el↗

arXiv2024

Wavefunction approach to the fractional anomalous Hall crystal

We propose fractional anomalous Hall crystals (FAHCs) as possible ground states of strongly interacting electrons in parent bands with Berry curvature. FAHCs are exotic states of matter that spontaneously break continuous translation symmetry to form a fractional Chern insulator. We construct a unified family of variational wavefunctions that describe FAHCs and their competing states in the presence of uniform parent Berry curvature. We calculate their variational energy with Coulomb interactions semi-analytically in the thermodynamic limit. Our analysis reveals that FAHCs can be energetically favorable over both Wigner crystals and integer anomalous Hall crystals for sufficiently strong interactions or flat dispersion.

cond-mat.mes-hall↗

arXiv2024

Importance of electron-phonon coupling near the electron-liquid to Wigner-crystal transition in two-dimensional atomically thin materials

We study the effect of electron-phonon coupling on the location of the Fermi Liquid to Wigner Crystal transition in the two-dimensional electron gas realized in various material platforms. Based on dimensional estimates of the relevant parameters, we conclude that (as conventionally assumed) phonons are negligible in traditional semiconductor quantum well systems, but likely play a significant role in various recently synthesized atomically thin two-dimensional materials.

cond-mat.str-el↗

arXiv2024

Magnetic and nematic order of Bose-Fermi mixtures in moir\'e superlattices of 2D semiconductors

We investigate the magnetic orders in a mixture of Boson (exciton) and Fermion (electron or hole) trapped in transition-metal dichalcogenides moir\'e superlattices. A sizable antiferromagnetic exchange interaction is found between a carrier and an interlayer exciton trapped at different high symmetry points of the moir\'e supercell. This interaction at a distance much shorter than the carrier-carrier separation dominates the magnetic order in the Bose-Fermi mixture, where the carrier sublattice develops ferromagnetism opposite to that in the exciton sublattice. We demonstrate the possibility of increasing the Curie temperature of moir\'e carriers through electrical tuning of the exciton density in the ground state. In a trilayer moir\'e system with a p-n-p type band alignment, the exciton-carrier interplay can establish a layered antiferromagnetism for holes confined in the two outer layers. We further reveal a spontaneous nematic order in the Bose-Fermi mixture, arising from the interference between the Coulomb interaction and p-wave interlayer tunneling dictated by the stacking registry.

cond-mat.str-el↗

arXiv2024

Fractional quantum anomalous Hall effect in a singular flat band

In the search of fractional quantum anomalous Hall (FQAH) effect, the conventional wisdom is to start from a flat Chern band isolated from the rest of the Hilbert space by band gaps, so that many-body interaction can be projected to a landscape that mimics a Landau level. Singular flat bands (SFB), which share protected touching points with other dispersive bands, represent another type of flat landscapes differing from Landau levels and Chern bands in topological and geometric properties. Here we report the finding of FQAH phases in a SFB, which emerges in the bipartite limit of the nearest-neighbor tight-binding model of twisted bilayer MoTe$_2$. At 1/3 and 2/3 filling of the SFB, FQAH effects are demonstrated using density matrix renormalisation group calculations with all bands, as well as exact diagonalization calculations with the two touching bands. Gapping the band touching can turn the SFB into a nearly flat Chern band, but counter-intuitively this suppresses the FQAH effect, as the gap opening introduces strong inhomogeneity to the quantum geometry. An optical scheme to realize such SFB for cold atoms is provided. Our findings uncover a new arena for the exploration of fractional quantum Hall physics beyond the Landau level and Chern insulator paradigms.

cond-mat.mes-hall↗

arXiv2024

Parent Berry curvature and the ideal anomalous Hall crystal

We study a model of electrons moving in a parent band of uniform Berry curvature. At sufficiently high parent Berry curvature, we show that strong repulsive interactions generically lead to the formation of an anomalous Hall crystal: a topological state with spontaneously broken continuous translation symmetry. Our results are established via a mapping to a problem of Wigner crystallization in a regular 2D electron gas. Interestingly, we find that a periodic electrostatic potential induces a competing state with opposite Chern number. Our theory offers a unified perspective for understanding several aspects of the recently observed integer and fractional quantum anomalous Hall effects in rhombohedral multilayer graphene and provides a recipe for engineering new topological states.

cond-mat.mes-hall↗

arXiv2024

Designing topology and fractionalization in narrow gap semiconductor films via electrostatic engineering

We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate that, for realistic material parameters, these bands are capable of hosting correlated topological phases such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases at zero magnetic field. Our results provide a path towards the realization of fractionalized topological states in a broad range of materials.

cond-mat.str-el↗

arXiv2023

Electrostatic moiré potential from twisted-hBN layers

Moiré superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moiré potential of the superlattice, however, is fixed by the interlayer coupling of the stacked functional layers (e.g. graphene) and dependent on carrier types (e.g. electrons or holes) and valleys (e.g. Γ vs. K). In contrast, twisted hexagonal boron nitride (hBN) layers are predicted to impose a periodic electrostatic potential that may be used to engineer the properties of an adjacent functional thin layer. Here, we show that this potential is described by a simple theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. We demonstrate that the potential depth and profile can be further controlled by assembling a double moiré structure. When the twist angles are similar at the two interfaces, the potential is deepened by adding the potential from the two twisted interfaces, reaching ~ 400 meV. When the twist angles are dissimilar at the two interfaces, multi-level polarization states are observed. As an example of controlling a functional layer, we demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in a semiconductor monolayer. These findings suggest exciting opportunities for engineering properties of an adjacent functional layer using the surface potential of a twisted hBN substrate.

cond-mat.mtrl-sci↗

arXiv2022

Anomalous Bloch oscillation and electrical switching of edge magnetization in bilayer graphene nanoribbon

Graphene features topological edge bands that connect the pair of Dirac points through either sectors of the 1D Brillouin zone depending on edge configurations (zigzag or bearded). Because of their flat dispersion, spontaneous edge magnetisation can arise from Coulomb interaction in graphene nanoribbons, which has caught remarkable interest. We find an anomalous Bloch oscillation in such edge bands, in which the flat dispersion freezes electron motion along the field direction, while the topological connection of the bands through the bulk leads to electron oscillation in the transverse direction between edges of different configurations on opposite sides/layers of a bilayer ribbon. Our Hubbard-model mean-field calculation shows that this phenomenon can be exploited for electrical switching of edge magnetisation configurations.

cond-mat.mes-hall↗

arXiv2021

Edge state in AB-stacked bilayer graphene and its correspondence with SSH ladder

We study edge states in AB-stacked bilayer graphene (BLG) ribbon where the Chern number of the corresponding two-dimensional (2D) bulk Hamiltonian is zero. The existence and topological features of edge states when two layers ended with the same or different edge terminations (zigzag, bearded, armchair) are discussed. The edge states (non-dispersive bands near the Fermi level) are states localized at the edge of graphene nanoribbon that only exists in certain range of momentum $k_y$. Their existence near the Fermi level are protected by the chiral symmetry with topology well described by coupled Su-Schrieffer-Heeger (SSH) chains model, i.e., SSH ladder, based on the bulk-edge correspondence of one-dimensional (1D) systems. These zero-energy edge states can exist in the whole $k_y$ region when two layers have zigzag and bearded edges, respectively. Winding number calculation shows a topological phase transition between two distinct non-trivial topological phases when crossing the Dirac points. Interestingly, we find the stacking configuration of BLG ribbon is important since they can lead to unexpected edge states without protection from the chiral symmetry both near the Fermi level in armchair-armchair case and in the gap within bulk bands that are away from Fermi level in the general case. The influence of interlayer next nearest neighbor (NNN) interaction and interlayer bias are also discussed to fit the realistic graphene materials, which suggest the robust topological features of edge states in BLG systems.

cond-mat.mes-hall↗