arXiv subjects

Tobias Dierke

Publications and source records attributed to Tobias Dierke.

4 recordsLinked to original sources

arXiv2026

Polarization-Dependent Raman Selection Rules in Sb$_2$S$_3$ from First Principles and Experiment

Antimony sulfide (Sb$_2$S$_3$) is a semiconductor composed of quasi-one-dimensional ribbon-like structural units, which give rise to pronounced structural anisotropy in the bulk crystal. Despite growing interest in Sb$_2$S$_3$, in particular Sb$_2$S$_3$ thin films, a detailed understanding of its symmetry-based lattice dynamics remains incomplete. Here, we present a combined experimental and theoretical study of polarization-dependent Raman scattering in Sb$_2$S$_3$ thin films. We derive the Raman selection rules from the crystal symmetry and calculate the zone-center phonon modes and corresponding Raman tensors using density functional theory. The calculated polarization dependencies are systematically compared with polarization-dependent Raman measurements performed on oriented crystalline domains of Sb$_2$S$_3$ thin films. This combined analysis enables reliable mode assignments, elucidates the anisotropic Raman response associated with the ribbon-like crystal structure, and demonstrates the sensitivity of polarized Raman spectroscopy to crystal orientation and structural order in antimony chalcogenide (Sb$_2$S$_3$, Sb$_2$Se$_3$) as well as isostructural Bi$_2$S$_3$ thin films.

cond-mat.mtrl-sci↗

arXiv2025

Correlative and in situ microscopy investigation of phase transformation, crystal growth and degradation of antimony sulfide thin films

Antimony sulfide (Sb$_2$S$_3$), a compound of earth-abundant elements with highly anisotropic, quasi-layered crystal structure, triggered growing interest as a solar absorber in photovoltaics and as a phase change material in memory devices, yet challenges remain in achieving high-quality thin films with controlled nucleation and growth for optimal performance. Here, we investigate the phase transformation, crystal structure and properties, growth and degradation of atomic layer deposited Sb$_2$S$_3$ thin films using in situ TEM and correlative ex situ analysis. The as-deposited amorphous films crystallized at 243°C, forming grains with an [100] out-of-plane texture and developed into tens to hundreds of micrometer, leaves-shaped grains. Introducing an ultra-thin ZnS interfacial layer increased nucleation density, and resulted in a few micrometer-sized, more uniform grains while retaining the overall [100] texture. In situ observations and subsequent crystal orientation analysis with cutting-edge 4D-STEM and EBSD revealed that the grains grew faster along the [010] ribbon direction and that the bare films underwent early-stage degradation, forming holes in amorphous regions during annealing. The ZnS interlayer mitigated degradation, stabilizing the films and improving their uniformity. These findings offer valuable insights for optimizing Sb$_2$S$_3$ thin films for applications both as solar cell materials and phase change materials.

cond-mat.mtrl-sci↗

arXiv2025

Identification of Polytypism and Their Dislocations in Bilayer MoS2 Using Correlative Transmission Electron Microscopy and Raman Spectroscopy

Stacking orders and topological defects substantially influence the physical properties of 2D van der Waals (vdW) materials. However, the inherent features of 2D materials challenge the effectiveness of single characterization techniques in identifying stacking sequences, necessitating correlative approaches. Using bilayer MoS2 as a benchmark, we differentiate its polytypism and specific dislocations through transmission electron microscopy (TEM) and Raman spectroscopy. Perfect and partial dislocations were revealed in TEM, which are closely linked to the stacking sequences, thus indirectly indicating the 2H and 3R polytypes. 3D electron diffraction reconstruction on relrods and low-frequency Raman spectroscopy further validated these polytypes owing to their reliance on crystal symmetry. Surprisingly, we unexpectedly resolved both polytypes despite starting with 2H bulk crystal, pointing to a possible phase transition during mechanical exfoliation. The correlative TEM-Raman approach can be extended to other 2D materials, paving the way for property alteration via stacking and defect engineering.

cond-mat.mtrl-sci↗

arXiv2024

Moiré lattice of twisted bilayer graphene as template for non-covalent functionalization

We present a novel approach to achieve spatial variations in the degree of non-covalent functionalization of twisted bilayer graphene (tBLG). The tBLG with twist angles varying between ~ 5° and 7° was non-covalently functionalized with 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN) molecules. Our results show a correlation between the degree of functionalization and the twist angle of tBLG. This correlation was determined through Raman spectroscopy, where areas with larger twist angles exhibited a lower HATCN peak intensity compared to areas with smaller twist angles. We suggest that the HATCN adsorption follows the moiré pattern of tBLG by avoiding AA-stacked areas and attach predominantly to areas with a local AB-stacking order of tBLG, forming an overall ABA-stacking configuration. This is supported by density functional theory (DFT) calculations. Our work highlights the role of the moiré lattice in controlling the non-covalent functionalization of tBLG. Our approach can be generalized for designing nanoscale patterns on two-dimensional (2D) materials using moiré structures as a template.

cond-mat.mtrl-sci↗