arXiv subjects

Tobias Foller

Publications and source records attributed to Tobias Foller.

4 recordsLinked to original sources

arXiv2022

Mass transport via in-plane nanopores in graphene oxide membranes

Angstrom confined solvents in two-dimensional laminates travel through interlayer spacings, gaps between adjacent sheets, and via in plane pores. Among these, experimental access to investigate the mass transport through in plane pores is lacking. Here, we create these nanopores in graphene oxide membranes via ion irradiation with precise control over functional groups, pore size and pore density. Low ion induced pore densities result in mild reduction and increased water permeation for the membranes. Higher pore densities lead to pronounced reduction and complete blockage of pure water however allows permeation of ethanol water mixture due to weakening of hydrogen network. We confirm with simulations, that the attraction of the solvents towards the pores with functional groups and disruption of the angstrom confined hydrogen network is crucial to allow in plane pore transport.

cond-mat.mtrl-sci↗

arXiv2021

Enhanced graphitic domains of unreduced graphene oxide and the interplay of hydration behaviour and catalytic activity

Previous studies indicate that the properties of graphene oxide (GO) can be significantly improved by enhancing its graphitic domain size through thermal diffusion and clustering of functional groups. Remarkably, this transition takes place below the decomposition temperature of the functional groups and thus allows fine-tuning of graphitic domains without compromising with the functionality of GO. By studying the transformation of GO under mild thermal treatment, we directly observe this size enhancement of graphitic domains from originally 40 nm2 to 200 nm2 through an extensive transmission electron microscopy (TEM) study. Additionally, we confirm the integrity of the functional groups during this process by comprehensive chemical analysis. A closer look into the process confirms the theoretically predicted relevance for the room temperature stability of GO. We further investigate the influence of enlarged graphitic domains on the hydration behaviour of GO and catalytic performance of single-atom catalysts supported by GO.

physics.app-ph↗

arXiv2017

Hysteresis in the transfer characteristics of MoS2 transistors

We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trapping at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trapping, play an important role, besides H2O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.

cond-mat.mes-hall↗

arXiv2017

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10^4 s, due to photo-charge trapping at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 kΩ/μm, ON current as high as 1.25 nA/μm, 10^5 ON-OFF ratio, mobility of 1 cm^2/Vs and photoresponsivity R=1 A/W.

cond-mat.mes-hall↗