arXiv subjects

Tobias Goldenberger

Publications and source records attributed to Tobias Goldenberger.

3 recordsLinked to original sources

arXiv2026

Charge-to-spin conversion in epitaxial and polycrystalline Bi and Bi/Ag layers

Bi is predicted to be an efficient generator of spin-orbit torques (SOTs), with charge-to-spin conversion efficiency comparable to those of prototypical heavy metals, such as Ta, W, and Pt. However, experimental reports provide widely scattered interconversion efficiencies, while the origin of the large conversion signal in Bi/Ag bilayers remains controversial. Here, we investigate charge-to-spin conversion in epitaxial and polycrystalline Bi-based magnetic heterostructures by measuring the damping-like SOT using magneto-optic Kerr effect magnetometry, complemented by structural and spectroscopic analyses and harmonic Hall resistance measurements. We show that inserting an Ag spacer between Bi(001) and metallic ferromagnets (FeCo or Ni) enhances the SOT efficiency by more than one order of magnitude, reaching an effective spin Hall conductivity of approximately $2 \times 10^5 (\hbar/2e)$ S/m, in excellent agreement with theoretical expectations for bulk Bi. This enhancement can be consistently explained by the preservation of the structural and chemical integrity of Bi, otherwise compromised by the direct deposition of a ferromagnetic overlayer, rather than by Rashba spin-orbit coupling at the Bi/Ag interface. Comparative studies across epitaxial, polycrystalline, and intentionally surface-oxidized Bi films, beyond oxygen doses known to destroy Bi(001) surface states, reveal that structural disorder has a negative impact on the SOT efficiency and indicate a dominant bulk contribution to spin-current generation in Bi/Ag heterostructures, yielding an effective Bi spin Hall angle of approximately 1. By establishing a direct correlation between atomic-scale integrity and charge-to-spin conversion, this study provides design principles to improve the reliability of Bi-based SOT devices and offers a robust framework for interpreting spin-charge interconversion in Bi and Bi/Ag systems.

cond-mat.mtrl-sci↗

arXiv2026

Polarizing ultrathin ferroelectric BaTiO3 films through interfacial layer polarization

An important requirement for the integration of ferroelectric thin films into devices is deterministic control of the polarization state in films of only a few unit cells in thickness. Here, we utilize the charged atomic planes of (001)-oriented SmNiO$_3$ (SNO) buffer layers as a polarizing template to stabilize the polarization in ferroelectric BaTiO$_3$ (BTO) model system thin films. We show that an upwards (downwards) oriented polarization is achieved by selection of the [SmO]$^+$ ([NiO$_2$]$^-$) buffer termination. Most importantly, the charged atomic planes of SNO suppress the depolarizing-field-induced critical thickness in BTO, and we record the emergence of a net polarization in our BTO films from the first unit cell deposited. Our experiments, guided by density-functional-theory (DFT) calculations, further highlight the impact of charged defects on the polarizing effectiveness of the SNO buffer. Specifically, oxygen vacancies counteract the polarizing field of the negatively charged, [NiO$_2$]$^-$-terminated surface of the SNO buffer. Our findings provide important insights into the interplay of defect chemistry and polarizing interfaces to stabilize ferroelectric polarization down to the single-unit-cell limit.

cond-mat.mtrl-sci↗

arXiv2026

Generating unconventional spin-orbit torques with patterned phase gradients in tungsten thin films

A key aim in spintronics is to achieve current-induced magnetization switching via spin-orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy-metal devices, giving variations in thickness, composition, or interface quality. However, the small gradients achievable with common growth techniques limit both the impact of this approach and understanding of the underlying physical mechanisms. Here, spin-orbit torques are patterned on a mesoscopic length scale in tungsten thin films using direct-write laser annealing. Through transmission electron microscopy, resistivity, and second harmonic measurements, the continuous transformation of the crystalline phase of W films from the highly spin-orbit coupled, high resistivity $β$ phase to the minimally spin-orbit coupled, low resistivity $α$ phase is tracked with increasing laser fluence. Gradients with different steepness are patterned in the tungsten phase to create spin-orbit torque channels and, when interfaced with CoFeB, tungsten wires with a sufficiently strong gradient can switch the magnetization without an applied magnetic field. Therefore, exploiting the unique microstructure of mixed-phase W allows precise control of the local electronic current density and direction, as well as local spin-orbit torque efficiency, providing a new avenue for the design of efficient spintronic devices.

cond-mat.mes-hall↗