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Tobias J. Kippenberg

Publications and source records attributed to Tobias J. Kippenberg.

At least 55 records · Page 3Linked to original sources

Fundamental charge noise in electro-optic photonic integrated circuits

Understanding thermodynamical measurement noise is of central importance for electrical and optical precision measurements from mass-fabricated semiconductor sensors, where the Brownian motion of charge carriers poses limits, to optical reference cavities for atomic clocks or gravitational wave detection, which are limited by thermorefractive and thermoelastic noise due to the transduction of temperature fluctuations to the refractive index and length fluctuations. Here, we discover that unexpectedly charge carrier density fluctuations give rise to a novel noise process in recently emerged electro-optic photonic integrated circuits. We show that Lithium Niobate and Lithium Tantalate photonic integrated microresonators exhibit an unexpected Flicker type (i.e. $1/f^{1.2}$) scaling in their noise properties, significantly deviating from the well-established thermorefractive noise theory. We show that this noise is consistent with thermodynamical charge noise, which leads to electrical field fluctuations that are transduced via the strong Pockels effects of electro-optic materials. Our results establish electrical Johnson-Nyquist noise as the fundamental limitation for Pockels integrated photonics, crucial for determining performance limits for both classical and quantum devices, ranging from ultra-fast tunable and low-noise lasers, Pockels soliton microcombs, to quantum transduction, squeezed light or entangled photon-pair generation. Equally, this observation offers optical methods to probe mesoscopic charge fluctuations with exceptional precision.

physics.optics↗

Piezoelectric actuation for integrated photonics

Recent decades have seen significant advancements in integrated photonics, driven by improvements in nanofabrication technology. This field has developed from integrated semiconductor lasers and low-loss waveguides to optical modulators, enabling the creation of sophisticated optical systems on a chip scale capable of performing complex functions like optical sensing, signal processing, and metrology. The tight confinement of optical modes in photonic waveguides further enhances the optical nonlinearity, leading to a variety of nonlinear optical phenomena such as optical frequency combs, second-harmonic generation, and supercontinuum generation. Active tuning of photonic circuits is crucial not only for offsetting variations caused by fabrication in large-scale integration, but also serves as a fundamental component in programmable photonic circuits. Piezoelectric actuation in photonic devices offers a low-power, high-speed solution and is essential in the design of future photonic circuits due to its compatibility with materials like Si and Si3N4, which do not exhibit electro-optic effects. Here, we provide a detailed review of the latest developments in piezoelectric tuning and modulation, by examining various piezoelectric materials, actuator designs tailored to specific applications, and the capabilities and limitations of current technologies. Additionally, we explore the extensive applications enabled by piezoelectric actuators, including tunable lasers, frequency combs, quantum transducers, and optical isolators. These innovative ways of managing photon propagation and frequency on-chip are expected to be highly sought after in the future advancements of advanced photonic chips for both classical and quantum optical information processing and computing.

physics.optics↗

Ultrafast tunable photonic integrated Pockels extended-DBR laser

Frequency-agile lasers that can simultaneously feature low noise characteristics as well as fast mode hop-free frequency tuning are keystone components for applications ranging from frequency modulated continuous wave (FMCW) LiDAR, to coherent optical communication and gas sensing. The hybrid integration of III-V gain media with low-loss photonic integrated circuits (PICs) has recently enabled integrated lasers with faster tuning and lower phase noise than the best legacy systems, including fiber lasers. In addition, lithium niobate on insulator (LNOI) PICs have enabled to exploit the Pockels effect to demonstrate self-injection locked hybrid lasers with tuning rates reaching peta-hertz per second. However, Pockels-tunable laser archetypes relying on high-Q optical microresonators have thus far only achieved limited output powers, are difficult to operate and stabilize due to the dynamics of self-injection locking, and require many analog control parameters. Here, we overcome this challenge by leveraging an extended distributed Bragg reflector (E-DBR) architecture to demonstrate a simple and turn-key operable frequency-agile Pockels laser that can be controlled with single analog operation and modulation inputs. Our laser supports a continuous mode hop-free tuning range of over 10 GHz with good linearity and flat actuation bandwidth up to 10 MHz, while achieving over 15 mW in-fiber output power at 1545 nm and kHz-level intrinsic linewidth, a combination unmet by legacy bulk lasers. This hybrid laser design combines an inexpensive reflective semiconductor optical amplifier (RSOA) with an electro-optic DBR PIC manufactured at wafer-scale on a LNOI platform. We showcase the performance and flexibility of this laser in proof-of-concept coherent optical ranging (FMCW LiDAR) demonstration, achieving a 4 cm distance resolution and in a hydrogen cyanide spectroscopy experiment.

physics.optics↗

Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear loss, and high power handling over traditional silicon photonics. To achieve high-density photonic integration and high effective nonlinearity through tight optical confinement, thick stoichiometric Si$_3$N$_4$ films are indispensable. However, when using low-pressure chemical vapor deposition (LPCVD) to achieve high optical material transparency, Si$_3$N$_4$ films exhibit large tensile stress on the order of GPa. Methods for crack prevention are therefore essential. The photonic Damascene process has addressed this issue, attaining record low loss Si$_3$N$_4$ PICs, but it lacks control of the waveguide height. Conversely, precise waveguide dimension and ultra-low loss have been achieved with subtractive processing, but this method is not compatible with mass production due to the use of electron beam lithography. To date, an outstanding challenge is to attain both lithographic precision and ultra-low loss in high confinement Si$_3$N$_4$ PICs that are compatible with large-scale foundry manufacturing. Here, we present a single-step deposited, DUV-based subtractive method for producing wafer-scale ultra-low loss Si$_3$N$_4$ PICs that harmonize these necessities. By employing deep etching of densely distributed, interconnected trenches into the substrate, we effectively mitigate the tensile stress in the Si$_3$N$_4$ layer, enabling direct deposition of thick films without cracking and substantially prolonged storage duration. Lastly, we identify ultraviolet (UV) radiation-induced damage that can be remedied through rapid thermal annealing. Collectively, we develop ultra-low loss Si$_3$N$_4$ microresonators and 0.5 m-long spiral waveguides with losses down to 1.4 dB/m at 1550 nm with high production yield.

physics.optics↗

Hydrogen-free low-temperature silica for next generation integrated photonics

The advances in novel low-loss "on insulator" integrated photonics platforms beyond silicon, such as thin-film LiNbO3, LiTaO3, GaP and BaTiO3 have demonstrated major potential across a wide range of applications, due to their unique electro-optical or nonlinear optical properties. This has heralded novel devices, ranging from low-voltage and high-speed modulators to parametric amplifiers. For such photonic integrated circuits, a low-loss SiO2 cladding layer is a key element, serving as a passivation layer for the waveguides and enabling efficient fiber-to-chip coupling. However, numerous novel ferroelectric or III-V "on insulator" platforms have low tolerances for process temperature. This prohibits using high-temperature anneals to remove hydrogen, a common impurity that is inherent to ordinary chemical vapor deposited SiO2 and causes significant optical loss in the near infrared. Here, we satisfy the dichotomy of a low-loss wafer scale manufactured SiO2 cladding and low processing temperature. Inspired by the manufacturing of optical fibers, we introduce a hydrogen-free, low-loss SiO2 cladding that is deposited at low temperatures (300 degrees Celsius) by using SiCl4 and O2 as precursors in inductively coupled plasma-enhanced chemical vapor deposition (ICPCVD). By replacing hydrogenous silicon precursors (e.g. SiH4) with SiCl4, the deposited film is inherently free from residual hydrogen. The process temperature is compatible with the "on insulator" platforms and CMOS electronic integrated circuits. We demonstrate a wide low-loss window that covers all telecommunication bands from 1260 nm to 1625 nm. We achieve a < 2.5 dB/m waveguide loss at 1550 nm, comparable with 1200 degree Celsius annealed films. Our SiCl4 process provides a key future cladding for all recently emerged "on-insulator" photonics platforms, that is low cost, scalable in manufacturing, and directly foundry compatible.

physics.optics↗

Unifying frequency metrology across microwave, optical, and free-electron domains

Frequency metrology lies at the heart of precision measurement. Optical frequency combs provide a coherent link uniting the microwave and optical domains in the electromagnetic spectrum, with profound implications in timekeeping, sensing and spectroscopy, fundamental physics tests, exoplanet search, and light detection and ranging. Here, we extend this frequency link to free electrons by coherent modulation of the electron phase by a continuous-wave laser locked to a fully stabilized optical frequency comb. Microwave frequency standards are transferred to the optical domain via the frequency comb, and are further imprinted in the electron spectrum by optically modulating the electron phase with a photonic chip-based microresonator. As a proof-of-concept demonstration, we apply this frequency link in the calibration of an electron spectrometer, and use the electron spectrum to measure the optical frequency. Our work bridges frequency domains differed by a factor of $\sim10^{13}$ and carried by different physical objects, establishes a spectroscopic connection between electromagnetic waves and free-electron matter waves, and has direct ramifications in ultrahigh-precision electron spectroscopy.

physics.optics↗

Bidirectional microwave-optical transduction based on integration of high-overtone bulk acoustic resonators and photonic circuits

Coherent interconversion between microwave and optical frequencies can serve as both classical and quantum interfaces for computing, communication, and sensing. Here, we present a compact microwave-optical transducer based on monolithic integration of piezoelectric actuators atop silicon nitride photonic circuits. Such an actuator directly couples microwave signals to a high-overtone bulk acoustic resonator defined by the suspended silica cladding of the optical waveguide core, which leads to enhanced electromechanical and optomechanical couplings. At room temperature, this triply resonant piezo-optomechanical transducer achieves an off-chip photon number conversion efficiency of -48 dB over a bandwidth of 25 MHz at an input pump power of 21 dBm. The approach is scalable in manufacturing and, unlike existing electro-optic transducers, does not rely on superconducting resonators. As the transduction process is bidirectional, we further demonstrate synthesis of microwave pulses from a purely optical input. Combined with the capability of leveraging multiple acoustic modes for transduction, the present platform offers prospects for building frequency-multiplexed qubit interconnects and for microwave photonics at large.

quant-ph↗

A chip-scale second-harmonic source via injection-locked all-optical poling

Second-harmonic generation allows for coherently bridging distant regions of the optical spectrum, with applications ranging from laser technology to self-referencing of frequency combs. However, accessing the nonlinear response of a medium typically requires high-power bulk sources, specific nonlinear crystals, and complex optical setups, hindering the path toward large-scale integration. Here we address all of these issues by engineering a chip-scale second-harmonic (SH) source based on the frequency doubling of a semiconductor laser self-injection-locked to a silicon nitride microresonator. The injection-locking mechanism, combined with a high-Q microresonator, results in an ultra-narrow intrinsic linewidth at the fundamental harmonic frequency as small as 57 Hz. Owing to the extreme resonant field enhancement, quasi-phase-matched second-order nonlinearity is photoinduced through the coherent photogalvanic effect and the high coherence is mapped on the generated SH field. We show how such optical poling technique can be engineered to provide efficient SH generation across the whole C and L telecom bands, in a reconfigurable fashion, overcoming the need for poling electrodes. Our device operates with milliwatt-level pumping and outputs SH power exceeding 2 mW, for an efficiency as high as 280%/W under electrical driving. Our findings suggest that standalone, highly-coherent, and efficient SH sources can be integrated in current silicon nitride photonics, unlocking the potential of $χ^{(2)}$ processes in the next generation of integrated photonic devices.

physics.optics↗

Room-temperature quantum optomechanics using an ultra-low noise cavity

Ponderomotive squeezing of light, where a mechanical oscillator creates quantum correlations between the phase and amplitude of the interacting light field, is a canonical signature of the quantum regime of optomechanics. At room temperature, this has only been reached in pioneering experiments where an optical restoring force controls the oscillator stiffness, akin to the vibrational motion of atoms in an optical lattice. These include both levitated nanoparticles and optically-trapped cantilevers. Recent advances in engineered mechanical resonators, where the restoring force is provided by material rigidity rather than an external optical potential, have realized ultra-high quality factors (Q) by exploiting `soft clamping'. However entering the quantum regime with such resonators, has so far been prevented by optical cavity frequency fluctuations and thermal intermodulation noise. Here, we overcome this challenge and demonstrate optomechanical squeezing at room temperature in a phononic-engineered membrane-in-the-middle system. By using a high finesse cavity whose mirrors are patterned with phononic crystal structures, we reduce cavity frequency noise by more than 700-fold. In this ultra-low noise cavity, we introduce a silicon nitride membrane oscillator whose density is modulated by silicon nano-pillars, yielding both high thermal conductance and a localized mechanical mode with Q of 1.8e8. These advances enable operation within a factor of 2.5 of the Heisenberg limit, leading to squeezing of the probing field by 1.09 dB below the vacuum fluctuations. Moreover, the long thermal decoherence time of the membrane oscillator (more than 30 vibrational periods) allows us to obtain conditional displaced thermal states of motion with an occupation of 0.97 phonon, using a multimode Kalman filter. Our work extends quantum control of engineered macroscopic oscillators to room temperature.

quant-ph↗

Temporally and Longitudinally Tailored Dynamic Space-Time Wave Packets

In general, space-time wave packets with correlations between transverse spatial fields and temporal frequency spectra can lead to unique spatiotemporal dynamics, thus enabling control of the instantaneous light properties. However, spatiotemporal dynamics generated in previous approaches manifest themselves at a given propagation distance yet not arbitrarily tailored longitudinally. Here, we propose and demonstrate a new versatile class of judiciously synthesized wave packets whose spatiotemporal evolution can be arbitrarily engineered to take place at various predesigned distances along the longitudinal propagation path. Spatiotemporal synthesis is achieved by introducing a 2-dimensional spectrum comprising both temporal and longitudinal wavenumbers associated with specific transverse Bessel-Gaussian fields. The resulting spectra are then employed to produce wave packets evolving in both time and axial distance - in full accord with the theoretical analysis. In this respect, various light degrees of freedom can be independently manipulated, such as intensity, polarization, and transverse spatial distribution (e.g., orbital angular momentum). Through a temporal-longitudinal frequency comb spectrum, we simulate the synthesis of the aforementioned wave packet properties, indicating a decrease in relative error compared to the desired phenomena as more spectral components are incorporated. Additionally, we experimentally demonstrate tailorable spatiotemporal fields carrying time- and longitudinal-varying orbital angular momentum, such that the local topological charge evolves every ~1 ps in the time domain and 10 cm axially. We believe that our space-time wave packets can significantly expand the exploration of spatiotemporal dynamics in the longitudinal dimension, and potentially enable novel applications in ultrafast microscopy, light-matter interactions, and nonlinear optics.

physics.optics↗

Voltage-tunable OPO with an alternating dispersion dimer integrated on chip

Optical parametric oscillators enable the conversion of pump light to new frequency bands using nonlinear optical processes. Recent advances in integrated nonlinear photonics have led to create compact, chip-scale sources via Kerr nonlinearity-induced parametric oscillations. While these sources have provided broadband wavelength tuning, the ability to tune the emission wavelength via dynamically altering the dispersion, has not been attained so far. Here we present a voltage-tunable, on-chip integrated optical parametric oscillator based on alternating dispersiondimer, allowing to tune the emission over nearly 20 THz near 1550 nm. Unlike previous approaches, our device eliminates the need for a widely tunable pump laser source and provides efficient pump filtering at the drop port of the auxiliary ring. Integration of this scheme on a chip opens up the possibility of compact and low-cost voltage-tunable parametric oscillators with diverse application possibilities.

physics.optics↗

Free-electron interaction with nonlinear optical states in microresonators

The short de Broglie wavelength and strong interaction empower free electrons to probe scattering and excitations in materials and resolve the structure of biomolecules. Recent advances in using nanophotonic structures to mediate bilinear electron-photon interaction have brought novel optical manipulation schemes to electron beams, enabling high space-time-energy resolution electron microscopy, quantum-coherent optical modulation, attosecond metrology and pulse generation, transverse electron wavefront shaping, dielectric laser acceleration, and electron-photon pair generation. However, photonic nanostructures also exhibit nonlinearities, which have to date not been exploited for electron-photon interactions. Here, we report the interaction of electrons with spontaneously generated Kerr nonlinear optical states inside a continuous-wave driven photonic chip-based microresonator. Optical parametric processes give rise to spatiotemporal pattern formation, or dissipative structures, corresponding to coherent or incoherent optical frequency combs. By coupling such microcombs in situ to electron beams, we demonstrate that different dissipative structures induce distinct fingerprints in the electron spectra and Ramsey-type interference patterns. In particular, using spontaneously formed femtosecond temporal solitons, we achieve ultrafast temporal gating of the electron beam without the necessity of a pulsed laser source or a pulsed electron source. Our work elucidates the interaction of free electrons with a variety of nonlinear dissipative states, demonstrates the ability to access solitons inside an electron microscope, and extends the use of microcombs to unexplored territories, with ramifications in novel ultrafast electron microscopy, light-matter interactions driven by on-chip temporal solitons, and ultra-high spatiotemporal resolution sampling of nonlinear optical dynamics and devices.

physics.optics↗

Lithium tantalate electro-optical photonic integrated circuits for high volume manufacturing

Photonic integrated circuits based on Lithium Niobate have demonstrated the vast capabilities afforded by material with a high Pockels coefficient, allowing linear and high-speed modulators operating at CMOS voltage levels for applications ranging from data-center communications and photonic accelerators for AI. However despite major progress, the industrial adoption of this technology is compounded by the high cost per wafer. Here we overcome this challenge and demonstrate a photonic platform that satisfies the dichotomy of allowing scalable manufacturing at low cost, while at the same time exhibiting equal, and superior properties to those of Lithium Niobate. We demonstrate that it is possible to manufacture low loss photonic integrated circuits using Lithium Tantalate, a material that is already commercially adopted for acoustic filters in 5G and 6G. We show that LiTaO3 posses equally attractive optical properties and can be etched with high precision and negligible residues using DUV lithography, diamond like carbon (DLC) as a hard mask and alkaline wet etching. Using this approach we demonstrate microresonators with an intrinsic cavity linewidth of 26.8 MHz, corresponding to a linear loss of 5.6 dB/m and demonstrate a Mach Zehnder modulator with Vpi L = 4.2 V cm half-wave voltage length product. In comparison to Lithium Niobate, the photonic integrated circuits based on LiTaO3 exhibit a much lower birefringence, allowing high-density circuits and broadband operation over all telecommunication bands (O to L band), exhibit higher photorefractive damage threshold, and lower microwave loss tangent. Moreover, we show that the platform supports generation of soliton microcombs in X-Cut LiTaO3 racetrack microresonator with electronically detectable repetition rate, i.e. 30.1 GHz.

physics.optics↗

Hertz-linewidth and frequency-agile photonic integrated extended-DBR lasers

Recent advances in the development of ultra-low loss silicon nitride (Si3N4)-based photonic integrated circuits have allowed integrated lasers to achieve a coherence exceeding those of fiber lasers and enabled unprecedentedly fast (Megahertz bandwidth) tuning using monolithically integrated piezoelectrical actuators. While this marks the first time that fiber laser coherence is achieved using photonic integrated circuits, in conjunction with frequency agility that exceeds those of legacy bulk lasers, the approach is presently compounded by the high cost of manufacturing DFB, as required for self-injection locking, as well as the precise control over the laser current and temperature to sustain a low noise locked operation. Reflective semiconductor optical amplifiers (RSOA) provide a cost-effective alternative solution but have not yet achieved similar performance in coherence or frequency agility, as required for frequency modulated continuous wave (FMCW) LiDAR, laser locking in frequency metrology or wavelength modulation spectroscopy for gas sensing. Here, we overcome this challenge and demonstrate an RSOA-based and frequency agile integrated laser tuned with high speed, good linearity, high optical output power, and turn-key operability while maintaining a small footprint. This is achieved using a tunable extended distributed Bragg reflector (E-DBR) in an ultra-low loss 200 nm thin Si3N4 platform with monolithically integrated piezoelectric actuators. We co-integrate the DBR with a compact ultra-low loss spiral resonator to further reduce the intrinsic optical linewidth of the laser to the Hertz level -- on par with the noise of a fiber laser -- via self-injection locking.

physics.optics↗

Quiet point engineering for low-noise microwave generation with soliton microcombs

Low-noise microwave signals can be efficiently generated with microresonator-based dissipative Kerr solitons ('microcombs'). However, the achieved phase noise in integrated microcombs is presently several orders of magnitude above the limit imposed by fundamental thermorefractive noise. One of the major contributors to this additional noise is the pump laser frequency noise transduction to the soliton pulse repetition rate via the Raman self-frequency shift. Quiet points (QPs) allow minimizing the transduction of laser frequency noise to soliton group velocity. While this method has allowed partial reduction of phase noise towards the fundamental thermodynamical limit, it relies on accidental mode crossings and only leads to very narrow regions of laser detuning where cancellation occurs, significantly narrower than the cavity linewidth. Here we present a method to deterministically engineer the QP, both in terms of its spectral width, and position, showing an increased phase noise suppression. This is achieved using coupled high-Q resonators arranged in the Vernier configuration. Investigating a generalized Lugiato-Lefever equation that accounts for the hybridized mode spectral displacement, we discover a continuum of possible QPs within the soliton existence region, characterized by ultra-low noise performance. Furthermore, we discover that by using two controlled optical mode crossings, it is possible to achieve regions where the QPs interact with each other enabling a substantial increase of the noise suppression range. Our work demonstrates a promising way to reach the fundamental limit of low-noise microwave generation in integrated microcombs.

physics.optics↗

Photonic-electronic integrated circuit-based coherent LiDAR engine

Microelectronic integration is a key enabler for the ubiquitous deployment of devices in large volumes ranging from MEMS and imaging sensors to consumer electronics. Such integration has also been achieved in photonics, where compact optical transceivers for data centers employ co-integrated photonic and electronic components. Chip-scale integration is of particular interest to coherent laser ranging i.e. frequency modulated continuous wave (FMCW LiDAR), a perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range and immunity to interference. Full wafer-scale integration of this technology has been compounded by the stringent requirements on the lasers, requiring high optical coherence, low chirp nonlinearity and requiring optical amplifiers. Here, we overcome this challenge and demonstrate a photonic-electronic integrated circuit-based coherent LiDAR engine, that combined all functionalities using fully foundry-compatible wafer scale manufacturing. It is comprised of a micro-electronic based high voltage arbitrary waveform generator, a hybrid photonic circuit based tunable Vernier laser with piezoelectric actuators, and an erbium-doped waveguide optical amplifier - all realized in a wafer scale manufacturing compatible process that comprises III-V semiconductors, SiN silicon nitride photonic integrated circuits as well as 130nm SiGe BiCMOS technology. The source is a turnkey, linearization-free, and can serve as a 'drop-in' solution in any FMCW LiDAR, that can be seamlessly integrated with an existing focal plane and optical phased array LiDAR approaches, constituting a missing step towards a fully chip-scale integrated LiDAR system.

physics.app-ph↗

A fully hybrid integrated Erbium-based laser

Erbium-doped fiber lasers exhibit high coherence and low noise as required for applications in fiber optic sensing, gyroscopes, LiDAR, and optical frequency metrology. Endowing Erbium-based gain in photonic integrated circuits can provide a basis for miniaturizing low-noise fiber lasers to chip-scale form factor, and enable large-volume applications. Yet, while major progress has been made in the last decade on integrated lasers based on silicon photonics with III-V gain media, the integration of Erbium lasers on chip has been compounded by large laser linewidth. Recent advances in photonic integrated circuit-based high-power Erbium-doped amplifiers, make a new class of rare-earth-ion-based lasers possible. Here, we demonstrate a fully integrated chip-scale Erbium laser that achieves high power, narrow linewidth, frequency agility, and the integration of a III-V pump laser. The laser circuit is based on an Erbium-implanted ultralow-loss silicon nitride Si$_3$N$4$ photonic integrated circuit. This device achieves single-mode lasing with a free-running intrinsic linewidth of 50 Hz, a relative intensity noise of $<$-150 dBc/Hz at $>$10 MHz offset, and output power up to 17 mW, approaching the performance of fiber lasers and state-of-the-art semiconductor extended cavity lasers. An intra-cavity microring-based Vernier filter enables wavelength tunability of $>$ 40 nm within the C- and L-bands while attaining side mode suppression ratio (SMSR) of $>$ 70 dB, surpassing legacy fiber lasers in tuning and SMRS performance. This new class of low-noise, tuneable Erbium waveguide laser could find applications in LiDAR, microwave photonics, optical frequency synthesis, and free-space communications. Our approach is extendable to other wavelengths, and more broadly, constitutes a novel way to photonic integrated circuit-based rare-earth-ion-doped lasers.

physics.optics↗

Mechanically Induced Correlated Errors on Superconducting Qubits with Relaxation Times Exceeding 0.4 Milliseconds

Superconducting qubits are one of the most advanced candidates to realize scalable and fault-tolerant quantum computing. Despite recent significant advancements in the qubit lifetimes, the origin of the loss mechanism for state-of-the-art qubits is still subject to investigation. Moreover, successful implementation of quantum error correction requires negligible correlated errors among qubits. Here, we realize ultra-coherent superconducting transmon qubits based on niobium capacitor electrodes, with lifetimes exceeding 0.4 ms. By employing a nearly quantum-limited readout chain based on a Josephson traveling wave parametric amplifier, we are able to simultaneously record bit-flip errors occurring in a multiple-qubit device, revealing that the bit-flip errors in two highly coherent qubits are strongly correlated. By introducing a novel time-resolved analysis synchronized with the operation of the pulse tube cooler in a dilution refrigerator, we find that a pulse tube mechanical shock causes nonequilibrium dynamics of the qubits, leading to correlated bit-flip errors as well as transitions outside of the computational state space. Our observations confirm that coherence improvements are still attainable in transmon qubits based on the superconducting material that has been commonly used in the field. In addition, our findings are consistent with qubit dynamics induced by two-level systems and quasiparticles, deepening our understanding of the qubit error mechanisms. Finally, these results inform possible new error-mitigation strategies by decoupling superconducting qubits from their mechanical environments.

quant-ph↗