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Tobias Morf

Publications and source records attributed to Tobias Morf.

2 recordsLinked to original sources

Unusual anisotropic response of the charge carrier mobility to uniaxial mechanical strain in Rubrene crystals

Charge transport in Rubrene single crystals under uniaxial mechanical strain is systematically investigated in the crystal's two in-plane transport directions both under tensile and compressive strain applied parallel or perpendicular to the current direction. The density of trap states remains unchanged. The field-effect mobility as a benchmark figures for intermolecular transport is found to increase with compressive strain and vice versa with a magnitude of -1.5 cm2/Vs per percent of strain independently of tranport direction. A very remarkable result is the mobility change when the crystal is strained perpendicular to the transport direction. While this enhancement could be quantitatively explained from an improved wave-function overlap, mobility in the perpendicular direction improves even more, contrary to simple geometric considerations based od later expansion and usual Poisson ratios. This result emphasises the central role of the stress induced variations of the dynamics wave function overlap in organic molecular crystals.

cond-mat.mtrl-sci

Radiation induced electronic trap states and local structural disorder in van~der~Waals bonded semiconductor crystals

In controlled X-ray irradiation experiments, the formation of trap states in the prototypical van der Waals bonded semiconductor Rubrene is studied quantitatively for doses up to 82 Gy (Gy = J/kg). About 100 electronic trap states, located around 0.3 eV above the valence band, are created by each absorbed 8 keV photon which is 2-3 orders of magnitude more than 1 MeV protons produce. Thermal annealing is shown to reduce these traps. Local structural disorder, which has also been induced by other means in different studies, is thus identified as a common origin of trap states in van der Waals bonded molecular organic semiconductors.

cond-mat.mtrl-sci