arXiv subjects

Tobias Schwaigert

Publications and source records attributed to Tobias Schwaigert.

7 recordsLinked to original sources

arXiv2026

Molecular Beam Epitaxy of AgTaO3

We report the first synthesis of single-crystal AgTaO3 thin films using molecular-beam epitaxy (MBE). High-quality epitaxial AgTaO3 films were grown on both (001)- and (111)-oriented SrTiO3 substrates using sequential deposition of atomic silver and TaO2 layers under an ozone/oxygen atmosphere (80 % O3 + 20 % O2). X-ray diffrac- tion and reciprocal space mapping demonstrate that the films are coherently strained to the SrTiO3 substrates with sharp rocking curves comparable to the substrates, indicating high structural perfection. High-angle annular dark-field scanning trans- mission electron microscopy (HAADF-STEM) confirms coherent, low defect growth for (001)pc-oriented films. For (111)pc-oriented films, initial coherent growth proceeds up to 10 nm before transitioning into a Ta-rich surface region. Energy-dispersive X-ray spectroscopy (EDX) reveals a narrow cation intermixing region at the sub- strate interface for both orientations. This work demonstrates an effective synthesis route for single-crystal AgTaO3 thin films, providing a platform to investigate strain engineering and emergent interfacial properties in silver-based tantalates.

cond-mat.mtrl-sci↗

arXiv2026

Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy

Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE), demonstrating single-oriented, monodomain growth of anisotropically strained thin films. Microstructural investigation is performed using synchrotron X-ray diffraction and scanning transmission electron microscopy. The tetravalent oxidation state of tantalum is confirmed using X-ray absorption and photoemission spectroscopy as well as electron energy-loss spectroscopy. Optical properties are investigated via spectroscopic ellipsometry and reveal a 0.3 eV Mott gap of the tantalum 5d electrons. Density-functional theory and group theoretical arguments are used to evaluate the limited stability of the rutile phase and reveal the potential to unlock a hidden metal-insulator transition concomitant with a structural phase transition to a distorted rutile phase, akin to NbO2. Our work expands the understanding of tantalum oxides and paves the way for their integration into next-generation electronic and photonic devices.

cond-mat.mtrl-sci↗

arXiv2026

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Epitaxial strain is a powerful means to engineer emergent phenomena in thin films and heterostructures. Here, we demonstrate that KTaO3, a cubic perovskite in bulk form, can be epitaxially strained into a highly tunable ferroelectric. KTaO3 films grown commensurate to SrTiO3 (001) substrates experience an in-plane strain of -2.1 % that transforms the cubic structure into a tetragonal polar phase with transition temperature of 475 K, consistent with our thermodynamic calculations. We show that the Curie temperature and the spontaneous electric polarization can be system- atically controlled with epitaxial strain. Scanning transmission electron microscopy reveals cooperative polar displacements of the potassium columns with respect to the neighboring tantalum columns at room temperature. Optical second-harmonic generation results are described by a tetragonal polar point group (4mm), indicating the emergence of a global polar ground state. We observe a ferroelectric hysteresis response, using metal-insulator-metal capacitor test structures. The results demon- strate a robust intrinsic ferroelectric state in epitaxially strained KTaO3 thin films.

cond-mat.mtrl-sci↗

arXiv2025

Large phonon-drag thermopower polarity reversal in Ba-doped KTaO3

This study reports the observation of phonon-drag thermopower polarity reversal in Ba-doped KTaO3 thin films, mediated by electron-phonon Umklapp scattering. Epitaxial films with distinct carrier concentrations (3.7 x 10^20 cm^-3 and 4.9 x 10^19 cm^-3) were grown via molecular-beam epitaxy. In heavily doped samples, where the Fermi surface spans 80% of the Brillouin zone, the Umklapp condition is satisfied, reversing electron momentum. This manifests as a sign-reversal in the thermopower around 80 K upon cooling despite the sample having only n-type carriers. On the other hand, the lightly doped sample (4.9 x 10^19 cm^-3) exhibits only a negative thermopower down to 2 K. These results advance the understanding of Umklapp electron-phonon drag in oxides and highlight KTaO3's potential for engineering unconventional thermoelectric materials.

cond-mat.mtrl-sci↗

arXiv2025

Topotactic oxidation of Ruddlesden-Popper nickelates reveals new structural family: oxygen-intercalated layered perovskites

Layered perovskites such as the Dion-Jacobson, Ruddlesden-Popper, and Aurivillius families host a wide range of correlated electron phenomena, from high-temperature superconductivity to multiferroicity. Here we report a new family of layered perovskites, realized through topotactic oxygen intercalation of La_{n+1}Ni_{n}O_{3n+1} (n=1-4) Ruddlesden-Popper nickelate thin films grown by ozone-assisted molecular-beam epitaxy. Post-growth ozone annealing induces a large c-axis expansion - 17.8% for La_{2}NiO_{4} (n=1) - that monotonically decreases with increasing n. Surface X-ray diffraction coupled with Coherent Bragg Rod Analysis reveals that this structural expansion arises from the intercalation of approximately 0.7 oxygen atoms per formula unit into interstitial sites within the rock salt spacer layers. The resulting structures exhibit a spacer layer composition intermediate between that of the Ruddlesden-Popper and Aurivillius phases, defining a new class of layered perovskites. Oxygen-intercalated nickelates exhibit metallicity and significantly enhanced nickel-oxygen hybridization, a feature linked to high-temperature superconductivity. Our work establishes topotactic oxidation as a powerful synthetic approach to accessing highly oxidized, metastable phases across a broad range of layered oxide systems, offering new platforms to tune properties via spacer-layer chemistry.

cond-mat.mtrl-sci↗

arXiv2022

Molecular Beam Epitaxy of KTaO$_3$

Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 contained in a conventional effusion cell as well as an electron-beam-heated tantalum source. Excess potassium and a combination of ozone and oxygen (10 \% O3 + 90 \% O2) were simultaneously supplied with the TaO$_2$ (or tantalum) molecular beams to grow the KTaO$_3$ films. Laue fringes suggest that the films are smooth with an abrupt film/substrate interface. Cross-sectional scanning transmission electron microscopy does not show any extended defects and confirms that the films have an atomically abrupt interface with the substrate. Atomic force microscopy reveals atomic steps at the surface of the grown films. Reciprocal space mapping demonstrates that the films, when sufficiently thin, are coherently strained to the SrTiO$_3$ (001) and GdScO$_3$ (110) substrates.

cond-mat.mtrl-sci↗

arXiv2019

Growth of CuFeO$_2$ Single Crystals by the Optical Floating-Zone Technique

CuFeO$_2$ single crystals up to 50 mm in length and up to 10 mm in diameter were grown by the optical floating-zone method. Stoichiometric polycrystalline rods with a diameter of 6-12 mm were used as feed materials to produce crystals of sufficient size to be used as substrates for the growth of thin films of delafossites. For stable growth along the $c$-axis, low growth rates of 0.4 mm/h are necessary. Due to the incongruent melting behavior of CuFeO$_2$, a stable melt zone requires adjustment of the lamp power during growth. The melting of CuFeO$_2$ is not simply incongruent because the thermodynamic equilibrium includes more than two solid phases and the melt; the gas phase is also involved. The crystals were characterized by X-ray diffraction and X-ray fluorescence measurements.

cond-mat.mtrl-sci↗