arXiv subjects

Tokuyuki Teraji

Publications and source records attributed to Tokuyuki Teraji.

24 records · Page 2Linked to original sources

arXiv2016

Polarization- and frequency-tunable microwave circuit for selective excitation of nitrogen-vacancy spins in diamond

We report on a planar microwave resonator providing arbitrarily polarized oscillating magnetic fields that enable selective excitation of the electronic spins of nitrogen-vacancy (NV) centers in diamond. The polarization plane is parallel to the surface of diamond, which makes the resonator fully compatible with (111)-oriented diamond. The field distribution is spatially uniform in a circular area with a diameter of 4 mm, and a near-perfect circular polarization is achieved. We also demonstrate that the original resonance frequency of 2.8 GHz can be varied in the range of 2-3.2 GHz by introducing varactor diodes that serve as variable capacitors.

cond-mat.mes-hall↗

arXiv2014

All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond

The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show high fidelity optical initialization and readout of electronic spin in a single $\mathrm{SiV}^-$ center with a spin relaxation time of $T_1=2.4\pm0.2$ ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of $T_2^\star=35\pm3$ ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherences by engineering interactions with phonons. These results establish the $\mathrm{SiV}^-$ center as a solid-state spin-photon interface.

quant-ph↗

arXiv2014

Isotopically varying spectral features of silicon vacancy in diamond

The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotope present in a single centre. This is of interest for quantum information applications since only the silicon 29 isotope has nuclear spin. In addition, we demonstrate that the 64 meV line is due to a local vibrational mode of the silicon atom. The presence of a local mode suggests a plausible origin of the isotopic shift of the zero phonon line.

cond-mat.mtrl-sci↗

arXiv2014

Electronic structure of the negatively-charged silicon-vacancy center in diamond

The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\langle111\rangle$ aligned split-vacancy structure with $D_{3d}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738 nm optical resonance.

cond-mat.mtrl-sci↗

arXiv2014

Perfect alignment and preferential orientation of nitrogen-vacancy centers during CVD growth of diamond on (111) surfaces

Synthetic diamond production is key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers that is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor decomposition (MPCVD) diamond growth technique on (111)-oriented substrates that yields perfect alignment ($94\pm2%$) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority ($74\pm4%$) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications.

cond-mat.mes-hall↗

arXiv2013

Strongly Coupled Diamond Spin Qubits by Molecular Nitrogen Implantation

Ionized nitrogen molecules ($^{15}$N$_{2}^+$) are used as efficient point sources for creating NV$^-$ pairs in diamond with nanoscale spatial separation and up to 55 kHz magnetic coupling strength. Co-implantation of $^{12}$C$^+$ increased the yield of pairs, and a $^{13}$C-depleted diamond allowed 0.65 ms coherence times to be obtained. Further coupling to a third dark spin provided a strongly coupled three spin register. These results mark an important step towards realization of multi-qubit systems and scalable NV$^-$ quantum registers.

quant-ph↗