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Tomasz Kazimierczuk

Publications and source records attributed to Tomasz Kazimierczuk.

At least 19 recordsLinked to original sources

Ultralow-Tensile Strain Enables Exciton Funneling and Energy Transfer to Boost MoSe2 Photoluminescence Quantum Yield

Strain engineering is a powerful route for controlling the exciton dynamics in van der Waals (vdW) heterostructures (HSs). The interlayer energy transfer (ET) process is another key factor in controlling the photocarrier relaxation pathways in vdW HSs. In this work, we combine these two processes to achieve an 8-fold enhancement to the relative photoluminescence (PL) quantum yield (QY) in a HS formed from monolayers of ReS2 and MoSe2, separated by a thin hBN interlayer, placed onto an hBN bubble. We achieve this enhancement by applying only 0.1% biaxial tensile strain, which results in efficient exciton funneling and an increased transition dipole moment. Our experimental data are supported by first-principles density-functional theory and coherent transfer-matrix method calculations, ruling out optical interference as the dominant origin of the enhancement. This work provides an innovative route for enhancing the PL QY of vdW materials via interplay between the tensile strain and the ET process.

cond-mat.mtrl-sci↗

Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters

Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation techniques were not a subject of thorough studies. This work presents evidence that by tuning the excitation laser energy to specific resonance values the excitation efficiency can be enhanced, resulting in relative increase of photoluminescence intensity by up to an order of magnitude. The resonances can be selectively addressed with linearly polarized light, while the emission dipole remains unchanged, enabling polarization-controlled enhancement. These results establish an efficient way of excitation for GaN-based emitters, thereby increasing the generation rate of photons. The data is consistent with excitation via localized vibrational modes associated with point-defect complexes, establishing a practical quasi-resonant route to brighter, polarization-addressable operation of GaN defect emitters and clarifying their energy-level structure.

cond-mat.mtrl-sci↗

Single vanadium ion magnetic dopant in an individual CdTe/ZnTe quantum dot

We present the basic properties of a new physical system: an individual V2+ ion embedded into an individual quantum dot. The system is realized utilizing molecular beam epitaxy and it is observed using a low-temperature polarization-resolved magneto-photoluminescence. The nature of the system is confirmed by observation of the excitonic lines split due to the interactions of a vanadium ion with carriers confined in a CdTe/ZnTe quantum dot. Observed data are explained by the numerical modeling which includes s,p-d exchange interaction, Zeeman splitting of the exciton and the ion, diamagnetic shift, and the presence of shear strain within the quantum dot. The fundamental state of vanadium exhibits a spin +/- 1/2 making this system a textbook localized qubit.

cond-mat.mes-hall↗

Fast Interlayer Energy Transfer from the Lower Bandgap MoS2 to the Higher Bandgap WS2

Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However, in some rare instances, ET can happen from the lower-to-higher bandgap material, depending on the strong overlap between the acceptor photoluminescence (PL) and the donor absorption spectra. In this work, we report an ET process from the lower bandgap MoS2 to the higher bandgap WS2, due to a near 'resonant' overlap between the MoS2 B and WS2 A excitonic levels. Changing the MoS2 bandgap from direct-to-indirect by increasing the layer number results in a reduced ET rate, evidenced by the quenching of the WS2 PL emission. Our work shows at 300 K, the ET timescale of ~33 fs is faster than the reported thermalization of the MoS2 excitonic intervalley scattering (K to K') time and competing with the ultrafast charge transfer timescale. Thus, allowing us to open a new direction in understanding the competing inter/intralayer processes.

cond-mat.mtrl-sci↗

Hole to Electron Crossover in a (Cd,Mn)Te Quantum Well through Surface Metallization

In this work we look into how the contact material influences the local charge properties of a p-type CdTe-based quantum well. We study five metals deposited as 10 nm layers on the sample surface: Au, Ag, Cr, Ni and Ti. We use magneto-spectroscopy to discriminate their charge states through monitoring the Zeeman shifts at singlet-triplet transitions. Most tested metals retain the original p-type of the QW, while gold and nickel coverage flips the local doping to n-type. This is attributed to a robust bonding of these two metals to the semiconductor, efficiently passivating its surface and thus improving electron diffusion from the metal to the quantum well.

cond-mat.mes-hall↗

Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe$_2$ layers

We report an experimental study of the magnetic-field dependence of the optically pumped valley polarization in an epitaxial tungsten diselenide (WSe$_2$) monolayer grown by molecular-beam epitaxy (MBE) on a hexagonal boron nitride (hBN) substrate. Circularly polarized photoluminescence (PL) measurements reveal that applying a weak out-of-plane magnetic field, on the order of 0.1 T, dramatically increases the effectiveness of the optical orientation of the emission associated with defect-bound localized excitons. We compare the obtained results with the earlier studies on the reference exfoliated monolayers, discussing both qualitative similarity as well as quantitative differences. Our observations are further supplemented by the results of time-resolved PL measurements, which confirm the pseudospin relaxation time of approximately 25 ps, a value significantly shorter than the $\approx$100 ps previously reported for mechanically exfoliated samples.

cond-mat.mtrl-sci↗

Photoluminescence efficiency of MBE-grown MoSe$_2$ monolayers featuring sharp excitonic lines and diverse grain structures

Recent studies have demonstrated that using h-BN as a substrate for the growth of transition metal dichalcogenides can significantly reduce excitonic linewidths. However, many other optical parameters still require optimization. In this work, we present a detailed study of the low-temperature photoluminescence efficiency of MBE-grown MoSe$_2$ monolayers on h-BN substrates, comparing them to state-of-the-art exfoliated monolayers encapsulated in h-BN. We demonstrate that a quantitative comparison between samples requires accounting for interference effects and Purcell enhancement or suppression of the emission. By accounting for these effects in both photoluminescence and Raman signals, we show that the overall intrinsic luminescence efficiency is proportional to the sample coverage. Consequently, we find that exciton diffusion and edge effects are negligible in spectroscopy of MBE-grown samples, even for nanometer-sized crystals.

cond-mat.mes-hall↗

Impact of the Hole Gas on Optically Detected Magnetic Resonance in (Cd,Mn)Te Based Quantum Well

Optically detected magnetic resonance (ODMR) is a useful technique for studying interactions between local spins (magnetic ions) and carrier gas. We present the ODMR study of single (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) with the hole gas. We observe different characteristics of the ODMR signals obtained simultaneously using the optical signals of neutral and positively charged exciton. From that, we infer an existence of local fluctuations of carrier gas density resulting in separate populations of Mn$^{2+}$ ions. At the same time, the shape of the ODMR signal contains information about the temperature of the magnetic ions involved in the absorption of the MW. Studying it in detail provides even more information about the interactions with charge carriers. In the QW, two separate ensembles of ions are thermalized differently in the presence of carriers.

cond-mat.mes-hall↗

Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale

In this work, we study the impact of carrier localization on three quantities sensitive to carrier gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free carrier conductivity, and the Knight shift. The last two are observed in a micrometer-scale, spatially resolved optically detected magnetic resonance experiment (ODMR). On the surface of MBE-grown (Cd,Mn)Te quantum well we identify defected areas in the vicinity of dislocations. We find that these areas show a much lower conductivity signal while maintaining the same Knight shift values as the pristine areas of the quantum well. We attribute this behavior to carrier localization in the defected regions.

cond-mat.mes-hall↗

Twisted MoSe2 Homobilayer Behaving as a Heterobilayer

Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature.

cond-mat.mes-hall↗

Strain-induced speed-up of Mn$^{2+}$ spin-lattice relaxation in (Cd,Mn)Te/(Cd,Mg)Te quantum wells: a time-resolved ODMR study

This study examines the spin-lattice relaxation rate of Mn$^{2+}$ ions in strained diluted magnetic semiconductor (Cd,Mn)Te/(Cd,Mg)Te quantum wells using the optically detected magnetic resonance (ODMR) technique. By adjusting the magnesium (Mg) content in the buffer layer, we created samples with different strain levels. Our time-resolved ODMR results show that the spin-lattice relaxation time becomes faster as strain increases. We also found that the relaxation rate increases with both magnetic field and temperature, showing a power-law behavior. To understand these observations, we used a theoretical model based on six-level rate equations with non-equal level separations. This model suggests that the main factor affecting relaxation in our samples is a "direct" mechanism. The model's predictions match well with our experimental data. Overall, our findings give insights into spin-lattice relaxation in strained quantum wells and could be important for the development of future quantum and spintronic devices.

cond-mat.mes-hall↗

Magnetic ion relaxation time distribution within a quantum well

Time-resolved optically detected magnetic resonance (ODMR) is a valuable technique to study the local deformation of the crystal lattice around magnetic ion as well as the ion spin relaxation time. Here we utilize selective Mn-doping to additionally enhance the inherent locality of the ODMR technique. We present the time-resolved ODMR studies of single {(Cd,Mg)Te/(Cd,Mn)Te} quantum wells (QWs) with manganese ions located at different positions along the growth axis -- in the center or on the sides of the quantum well. We observe that spin-lattice relaxation of Mn$^{2+}$ significantly depends on the ion-carrier wavefunction overlap at low-magnetic fields. Interestingly, the effect is clearly observed in spite of very low carrier density, which suggests the potential for control of the Mn$^{2+}$ ion relaxation rate by means of the electric field in future experiments.

cond-mat.mes-hall↗

Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material

High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe2-to-MoS2 with an interlayer hBN, due to the resonant overlapping of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.

cond-mat.mtrl-sci↗

The effect of dielectric environment on the brightening of neutral and charged dark excitons in WSe$_2$ monolayer

The dielectric environment of atomically-thin monolayer (ML) of semiconducting transition metal dichalcogenides affects both the electronic band gap and the excitonic binding energy in the ML. We investigate the effect of the environment on the in-plane magnetic field brightening of neutral and charged dark exciton emissions in the WSe$_2$ ML. The monolayers placed in three dielectric environments are studied, in particular, the ML encapsulated in hexagonal BN (hBN) flakes, the ML deposited on a hBN layer, and the ML embedded between the hBN flake and SiO$_2$/Si substrate. We observe that the brightening rates of the neutral and charged dark excitons depend on the dielectric environment, which may be related to the variation of the level of carrier concentration in the ML. Moreover, the surrounding media, characterized by different dielectric constants, influences weakly the relative energies of the neutral and charged dark excitons in reference to the bright ones.

cond-mat.mes-hall↗

Local field effects in ultrafast light-matter interaction measured by pump-probe spectroscopy of monolayer MoSe$_{\boldsymbol 2}$

Using a novel approach to ultrafast resonant pump-probe spectroscopy we investigate the spectral shape and dynamics of absorption features related to the A exciton in an hBN/MoSe$_2$/hBN van der Waals heterostructure. While in a pure two-level system a pump-probe experiment measures the occupation or the polarization dynamics, depending on the time ordering of the pulse pair, in the transition metal dichalcogenide (TMD) system both quantities get thoroughly mixed by strong exciton-exciton interaction. We find that for short positive delays the spectral lines experience pronounced changes in their shape and energy and they relax to the original situation on a picosecond time scale. For negative delays distinctive spectral oscillations appear indicating the first-time observation of perturbed free induction decay for a TMD system. The comparison between co-circular and cross-circular excitation schemes further allows us to investigate the rapid inter-valley scattering. By considering a three-level system as a minimal model including the local field effect, excitation induced dephasing and scattering between the excited states we explain all phenomena observed in the experiment with excellent consistency. Our handy model can be even further reduced to two levels in the case of a co-circular excitation, for which we derive analytic expressions to describe the detected signals. This allows us to trace back the spectral shapes and shifts to the impact of local field effect and excitation induced dephasing thus fully reproducing the complex behavior of the observed effects.

cond-mat.mes-hall↗

Polariton lasing and energy-degenerate parametric scattering in non-resonantly driven coupled planar microcavities

Multi-level exciton-polariton systems offer an attractive platform for studies of non-linear optical phenomena. However, studies of such consequential non-linear phenomena as polariton condensation and lasing in planar microcavities have so far been limited to two-level systems, where the condensation takes place in the lowest attainable state. Here, we report non-equilibrium Bose-Einstein condensation of exciton-polaritons and low threshold, dual-wavelength polariton lasing in vertically coupled, double planar microcavities. Moreover, we find that the presence of the non-resonantly driven condensate triggers interbranch exciton-polariton transfer in the form of energy-degenerate parametric scattering. Such an effect has so far been observed only under excitation that is strictly resonant in terms of the energy and incidence angle. We describe theoretically our time-integrated and time-resolved photoluminescence investigations by a set of rate equations involving an open-dissipative Gross-Pitaevskii equation. Our platform's inherent tunability is promising for construction of planar lattices, enabling three-dimensional polariton hopping and realization of photonic devices, such as two-qubit polariton-based logic gates.

cond-mat.mes-hall↗

Long-Distance Coupling and Energy Transfer between Exciton States in Magnetically Controlled Microcavities

Coupling of quantum emitters in a semiconductor relies, generally, on short-range dipole-dipole or electronic exchange type interactions. Consistently, energy transfer between exciton states, that is, electron-hole pairs bound by Coulomb interaction, is limited to distances of the order of 10~nm. Here, we demonstrate polariton-mediated coupling and energy transfer between excitonic states over a distance exceeding 2~$μ$m. We accomplish this by coupling quantum well-confined excitons through the delocalized mode of two coupled optical microcavities. Use of magnetically doped quantum wells enables us to tune the confined exciton energy by the magnetic field and in this way to control the spatial direction of the transfer. Such controlled, long-distance interaction between coherently coupled quantum emitters opens possibilities of a scalable implementation of quantum networks and quantum simulators based on solid-state, multi-cavity systems.

cond-mat.mes-hall↗

Valley pseudospin relaxation of charged excitons in monolayer MoTe$_2$

Zeeman effect induced by the magnetic field introduces a splitting between the two valleys at K$^+$ and K$^-$ points of the Brillouin zone in monolayer semiconducting transition metal dichalcogenides. In consequence, the photoluminescence signal exhibits a field dependent degree of circular polarization. We present a comprehensive study of this effect in the case of a trion in monolayer MoTe$_2$, showing that although time integrated data allows us to deduce a g-factor of the trion state, such an analysis cannot be substantiated by the timescales revealed in the time-resolved experiments.

cond-mat.mes-hall↗