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Tommaso Fazio

Publications and source records attributed to Tommaso Fazio.

3 recordsLinked to original sources

Entanglement generation between field modes mediated by a fluctuating conducting wall

We consider a movable conducting plate of finite mass, between two fixed ones, whose mechanical degrees of freedom are treated quantum-mechanically and bound to its equilibrium position by a harmonic potential. The movable wall is thus subjected to quantum fluctuations of its position. This creates a system of two sub-cavities separated by the movable fluctuating plate, and two massless one-dimensional scalar fields, one in each sub-cavity. This system is described by an appropriate generalization of the Law Hamiltonian. The presence of the movable wall yields an effective plate-fields interaction, as well as an effective interaction between the field modes. We obtain, at the second order in perturbation theory, the ground state of the interacting system and the reduced density operator of the fields in each sub-cavity by tracing out the wall's degrees of freedom. We calculate the entanglement between two field modes, one in each cavity, by evaluating analytically the negativity; we then evaluate numerically also the total multimode negativity. Our results show that in both cases the fields in the two sub-cavities are entangled, in contrast to the case in which the wall is fixed in space. We discuss the amount of the field entanglement present as a function of relevant physical parameters of the system such as the mass and oscillation frequency of the movable wall, its distance from the fixed walls and the frequencies of the field modes considered.

hep-th

Stability and decoherence analysis of the silicon vacancy in 3C-SiC

We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath containing Si29 and C13 nuclei in their natural isotopic concentration. We calculate the system energetic and magnetic properties with ab initio methods based on the Density Functional Theory, identifying the neutral charge state of the silicon vacancy as the most favorable for p doped 3C SiC systems. We thereon evaluate the Free Induction Decay and the Hahn echo sequence on the electron spin interacting with the nuclear spin bath. Here, the Electron Spin Echo Envelope Modulation phenomenon, due to single nuclear spin flipping processes, and the overall decay are highlighted in the context of the Cluster Correlation Expansion theory. We find a non exponential coherence decay, which is a typical feature of solid state qubits subjected to low frequency 1/f noise from the environment.

cond-mat.mtrl-sci

Generalized Cluster Correlation Expansion theory for STIRAP processes in the presence of a spin bath

The Stimulated Raman Adiabatic Passage (STIRAP) is applied to a system coupled to a bath made of fully-interacting two-level systems, whose dynamics is studied exploiting the generalized Cluster Correlation Expansion (gCCE) theory. We specialize our analysis to a negatively charged silicon vacancy (SiV-1) in non-purified 4H-SiC to assess the possibility of transferring population between two states of the ground manifold, also taking into account the interaction with a spherical nuclear spin bath formed by nuclei of 29Si and 13C. For this system, it is demonstrated that the presence of a small/medium sized bath has no effect on the protocol, finding in particular a set of parameter values for an efficient STIRAP process.

cond-mat.mes-hall