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Tommy Ahlgren

Publications and source records attributed to Tommy Ahlgren.

3 recordsLinked to original sources

Adjacent Sink Strengths Used in Multiscale Kinetic Rate Equation Simulations of Defects and Impurities in Solids

Kinetic Rate Equation (kRE) modeling is widely used to simulate defect and impurity evolution in solids over experimentally relevant time and length scales. However, conventional kRE formulations include only random-position sink strengths, which adequately describe trapping of defects created at random lattice sites but fail to capture the enhanced retrapping of defects released directly adjacent to traps during detrapping or dissociation events. This omission leads to systematic errors, including underestimated thermal desorption (TDS) peak temperatures and incorrect kinetic parameters when fitting to experimental data. In this work, we derive for the first time analytical expressions for the adjacent sink strength, including correction for finite impurity diffusion jump length. We provide a practical implementation strategy for integrating these expressions into kRE simulations. Comparisons with kinetic Monte Carlo (kMC) benchmarks demonstrate that adjacent sink strengths dominate the retrapping probability and are essential for reproducing the correct temperature dependence of TDS release peaks. Simulations that employ only random sink strengths can still be tuned to match TDS spectra; however, the resulting fitted trapping energies, detrapping frequencies, and diffusion parameters are often physically inconsistent. The adjacent sink strength formulation introduced here significantly improves the predictive capability of kRE modeling, enabling accurate multiscale simulations of defect and impurity behavior in materials. This framework also establishes a foundation for future extensions, including adjacent sink strengths associated with extended defects such as dislocations and grain boundaries, offering new opportunities to resolve persistent discrepancies between experimental and simulated trapping energetics.

cond-mat.mtrl-sci

Corrections to sink strengths used in rate equation simulations of defects in solids

The mean-field rate equations have proven to be a versatile method in simulating defect dynamics and temporal changes in the micro-structure of materials. However, the reliability and usefulness of the method depends critically on the defect interaction parameters used. In this study, we show that the sink strength depends also on the detrapping or dissociation process. The sink strength for a defect that is detrapped, is much larger than the values usually used. We present a theory how to determine the appropriate sink strength, and show that the rate equation method, in some cases, gives wrong results if the detrapping dependence on the sink strength parameter is omitted.

cond-mat.mtrl-sci

Vacuum electrical breakdown conditioning study in a parallel plate electrode pulsed DC system

Conditioning of a metal structure in a high-voltage system is the progressive development of resistance to vacuum arcing over the operational life of the system. This is, for instance, seen during the initial operation of radio frequency (rf) cavities in particle accelerators. It is a relevant topic for any technology where breakdown limits performance, and where conditioning continues for a significant duration of system runtime. Projected future linear accelerators require structures with accelerating gradients of up to 100 MV/m. Currently, this performance level is only achievable after a multi-month conditioning period. In this work, a pulsed DC system applying voltage pulses over parallel disk electrodes was used to study the conditioning process, with the objective of obtaining insight into its underlying mechanics, and ultimately, to find ways to shorten the conditioning process. Two kinds of copper electrodes were tested: As-prepared machine-turned electrodes ("hard" copper), and electrodes that additionally had been subjected to high temperature treatments ("soft" copper). The conditioning behaviour of the soft electrodes was found to be similar to that of comparably treated accelerating structures, indicating a similar conditioning process. The hard electrodes reached the same ultimate performance as the soft electrodes much faster, with a difference of more than an order of magnitude in the number of applied voltage pulses. Two distinctly different distributions of breakdown locations were observed on the two types of electrodes. Considered together, our results support the crystal structure dislocation theory of breakdown, and suggest that the conditioning of copper in high field systems such as rf accelerating structures is dominated by material hardening.

physics.app-ph