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Tomohiro Otsuka

Publications and source records attributed to Tomohiro Otsuka.

At least 19 recordsLinked to original sources

Automated Spin Readout Signal Analysis Using U-Net with Variable-Length Traces and Experimental Noise

Single-shot spin-state discrimination is essential for semiconductor spin qubits, but conventional threshold-based analysis of spin readout traces becomes unreliable under noisy conditions. Although recent neural-network-based methods improve robustness against experimental noise, they are sensitive to training conditions, restricted to fixed-length inputs, and limited to trace-level outputs without explicit temporal localization of transition events. In this work, we apply a U-Net architecture to spin readout signal analysis by formulating transition-event detection as a point-wise segmentation task in one-dimensional time-series data. The fully convolutional structure enables direct processing of variable-length traces. Point-wise and sample-wise evaluations demonstrate low readout error rates and high classification accuracy without retraining. The proposed method generalizes well to previously-unseen trace lengths and experimental non-Gaussian noise, outperforming a conventional threshold-based approach and providing a robust and practical solution for automated spin readout signal analysis.

cond-mat.mes-hall

Perfect impedance matching unlocks sensitive radio-frequency reflectometry in 2D material quantum dots

Two-dimensional (2D) materials are attractive platforms for realizing high-performance quantum bits (qubits). However, radio-frequency (RF) charge detection, which is a key technique for qubits readout, remains challenging in such systems. We demonstrate RF reflectometry with impedance matching for high-resistance quantum dot devices based on bilayer graphene and molybdenum disulfide. By integrating a tunable strontium titanate (SrTiO3) varactor into a resonant circuit, we achieve nearly perfect impedance matching, enabling sensitive charge detection. The demodulated RF signal clearly shows Coulomb oscillations, and the SrTiO3 varactor exhibits robustness against both magnetic fields and voltage noise on the varactor. Our results establish SrTiO3 varactors as effective tunable matching components for RF reflectometry in high-resistance 2D material quantum devices, providing a foundation for high-speed qubits readout.

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Quantum dot transistors based on CVD-grown graphene nano islands

Graphene nanoislands (GNIs) are one of the promising building blocks for quantum devices owing to their unique potential. However, direct electrical measurements of GNIs have been challenging due to the requirement of metal catalysts in typical synthesis methods. In this study, we demonstrate electrical transport measurements of GNIs by using microwave plasma chemical vapor deposition, which is a catalyst-free method to deposit graphene directly on SiO$_2$ substrates. This approach enables the fabrication of metal electrodes on GNIs, allowing us to measure their quantum transport properties. At low temperatures, one of our devices shows clear Coulomb diamonds with twofold degeneracy, indicating the formation of quantum dots and the vanishing of valley degeneracy. The charge state of the GNI is also modulated by a local side gate, and the tunneling coupling between leads and quantum dots is modulated by changing contact area and metal materials. These results provide device design guidelines toward GNI-based quantum devices for next-generation computing.

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On-chip calibrated radio-frequency measurement at cryogenic temperatures for determination of SrTiO3-based capacitor properties

Quantum computing has emerged as a promising technology for next-generation information processing, utilizing semiconductor quantum dots as one of the candidates for quantum bits. Radio-frequency (rf) reflectometry plays an important role in the readout of quantum dots but requires a precise rf measurement technique at cryogenic temperatures. While cryogenic calibration techniques, essential for rf reflectometry, have been developed, on-chip calibration near the device remains an important challenge. In this study, we develop an on-chip calibrated rf measurement system operating at 4K for characterizing SrTiO3-based varactors, which are promising components for tunable impedance matching circuits. Our system enables accurate measurements by eliminating errors associated with long rf circuit lines. We investigate the effects of annealing conditions, crystal orientation, and Ca doping of SrTiO3 crystals on the varactor properties in the frequency range for rf reflectometry. Our results provide insights for optimizing these components for cryogenic rf applications in quantum information processing systems.

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Formation of multiple quantum dots in ZnO heterostructures

In recent years, advancements in semiconductor manufacturing technology have enabled the formation of high-quality, high-mobility two-dimensional electron gases in zinc oxide (ZnO) heterostructures, making the electrostatic formation of quantum dots possible. ZnO, with its low natural abundance of isotopes possessing nuclear spin and its direct bandgap, is considered a potentially suitable material for quantum bit applications. In this study, we achieve the formation of triple quantum dots and the realization of a few-electron state in ZnO heterostructure devices. We also confirm that by varying the gate voltage between the quantum dots, it is possible to control the interdot spacing. Additionally, we observe a tunneling phenomenon called a quantum cellular automata effect, where multiple electrons move simultaneously, which is not seen in single or double quantum dots, due to Coulomb interactions. Our results demonstrate that ZnO nanostructures have reached a level where they can function as controllable multiple quantum dot systems.

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RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices

Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for scaling up these devices. Here, radio-frequency system-on-chip (RFSoC) technology is exepcted for a promising approach that combines scalability with flexibility. In this paper, we demonstrate RF reflectometry in gate-defined bilayer graphene quantum devices using RFSoC-based measurement architecture. By controlling the confinement strength through gate voltages, we achieve both Fabry-Pérot interferometer and quantum dot operations in a single device. Although impedance matching conditions currently limit the measurement sensitivity, we identify pathways for optimization through tunnel barrier engineering and resonator design. These results represent a step toward integrating high-bandwidth measurements with scalable quantum devices.

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Automatic detection of single-electron regime of quantum dots and definition of virtual gates using U-Net and clustering

To realize practical quantum computers, a large number of quantum bits (qubits) will be required. Semiconductor spin qubits offer advantages such as high scalability and compatibility with existing semiconductor technologies. However, as the number of qubits increases, manual qubit tuning becomes infeasible, motivating automated tuning approaches. In this study, we use U-Net, a neural network method for object detection, to identify charge transition lines in experimental charge stability diagrams. The extracted charge transition lines are analyzed using the Hough transform to determine their positions and angles. Based on this analysis, we obtain the transformation matrix to virtual gates. Furthermore, we identify the single-electron regime by clustering the Hough transform outputs. We also show the single-electron regime within the virtual gate space. These sequential processes are performed automatically. This approach will advance automated control technologies for large-scale quantum devices.

cond-mat.mes-hall

Lattice-guided growth of dense arrays of aligned transition metal dichalcogenide nanoribbons with high catalytic reactivity

Transition metal dichalcogenides (TMDs) exhibit unique properties and potential applications when reduced to one-dimensional (1D) nanoribbons (NRs), owing to quantum confinement and high edge densities. However, effective growth methods for self-aligned TMD NRs are still lacking. We demonstrate a versatile approach for lattice-guided growth of dense, aligned MoS2 NR arrays via chemical vapor deposition (CVD) on anisotropic sapphire substrates, without tailored surface steps. This method enables the synthesis of NRs with widths below 10 nm and longitudinal axis parallel to the zigzag direction, being also extensible to the growth of WS2 NRs and MoS2-WS2 hetero-nanoribbons. Growth is influenced by both substrate and CVD temperature, indicating the role of anisotropic precursor diffusion and substrate interaction. The 1D nature of the NRs was asserted by the observation of Coulomb blockade at low temperature. Pronounced catalytic activity was observed at the edges of the NRs, indicating their promise for efficient catalysis.

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Charge sensing of few-electron ZnO double quantum dots probed by radio-frequency reflectometry

Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the development of fundamental technological elements such as high-speed readout and charge sensing capabilities has become essential. In this study, we address these challenges by demonstrating radio-frequency (rf) reflectometry and charge sensing in ZnO quantum dots, thus advancing the potential for qubit applications. A device is fabricated on a high-quality ZnO heterostructure, featuring gate-defined target and sensor quantum dots. The sensor dot, integrated into an rf resonator circuit, enables the detection of single-electron charges in the target dots. Using this setup, the formation of few-electron double quantum dots is observed by obtaining their charge stability diagram. Also, a charge stability diagram with a gate pulse sequence is measured. We discuss the strong electron correlation in ZnO, which leads to nearly degenerate spin-singlet and -triplet two-electron states in the (0, 2) charge state, and the perspectives on spin-state readout.

cond-mat.mes-hall

Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics

GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FETs to electronic devices. In this study, we investigate the formation of quantum dots in GaN FETs under the current collapse. By comparing the Coulomb diamond between standard measurements and those under current collapse, we find that the gate capacitance is significantly decreased by the current collapse. This suggests that the current collapse changes the distribution of trapped electrons at the device surface, which is reported in the previous study by operando X-ray spectroscopy. Also, we show external control of quantum dot formation, previously challenging in an FET structure, by using current collapse.

cond-mat.mes-hall

Charge state estimation in quantum dots using a Bayesian approach

Detection of single-electron charges in solid-state nanodevices is a key technique in semiconductor quantum bit readout for quantum information processing and probing electronic properties of nanostructures. This detection is achieved using quantum dot charge sensors, with its speed enhanced by high-speed RF reflectometry. Recently, real-time processing of data from RF reflectometry has attracted much attention to quantum information processing. In this paper, we propose a sequential method based on Bayes' theorem for estimating the charge state and compare its performance with the averaging approach and threshold judgment. When the noise variance differs between the empty and occupied states, the Bayesian approach demonstrates a lower error score, facilitating the extraction of more data points in real-time charge state estimation. Additionally, the Bayesian approach outperforms the averaging method and threshold judgment in terms of error rates for charge state estimation, even during charge transitions. This technique is broadly applicable to single-electron detection and holds substantial utility for quantum bit readout and the operation of nanoprobes that utilize single-electron detection.

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Microwave dependent quantum transport characteristics in GaN/AlGaN FETs

Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe the resonance spectra and their dependence on gate voltage and magnetic fields. To explain the observed behavior, we construct the possible scenario as a Fano interferometer with finite width. Our findings reveal the potential of semiconductor defects to contribute to the development of quantum information processing, providing their role to key components in next-generation quantum devices.

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Dynamics of quantum cellular automata electron transition in triple quantum dots

The quantum cellular automata (QCA) effect is a transition in which multiple electron move coordinately by Coulomb interactions and observed in multiple quantum dots. This effect will be useful for realizing and improving quantum cellular automata and information transfer using multiple electron transfer. In this paper, we investigate the real-time dynamics of the QCA charge transitions in a triple quantum dot by using fast charge-state readout realized by rf reflectometry. We observe real-time charge transitions and analyze the tunneling rate comparing with the first-order tunneling processes. We also measure the gate voltage dependence of the QCA transition and show that it can be controlled by the voltage.

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Visual explanations of machine learning model estimating charge states in quantum dots

Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been demonstrated. For further development of this technology, an understanding of the operation of the machine learning model, which is usually a black box, will be useful. In this study, we analyze the explainability of the machine learning model estimating charge states in quantum dots by gradient-weighted class activation mapping, which identified class-discriminative regions for the predictions. The model predicts the state based on the change transition lines, indicating that human-like recognition is realized. We also demonstrate improvements of the model by utilizing feedback from the mapping results. Due to the simplicity of our simulation and pre-processing methods, our approach offers scalability without significant additional simulation costs, demonstrating its suitability for future quantum dot system expansions.

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Kondo effect in electrostatically defined ZnO quantum dots

Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO.

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Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry

Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the sensor applications, such as the trade-off between sensitivity and dynamic range and the issue of instability due to external disturbances. In this study, we demonstrate proportional-integral-differential feedback control of the radio-frequency reflectometry in GaN nanodevices using a field-programmable gate array. This technique can maintain the operating point of the charge sensor with high sensitivity. The system also realizes a wide dynamic range and high sensor sensitivity through the monitoring of the feedback signal. This method has potential applications in exploring dynamics and instability of electronic and quantum states in nanostructures.

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Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs

Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light, and reveal the change of the disordered potential.

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Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates

Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such as quantum dots have been reported. To probe the dynamics of the electronics states and realize applications for quantum bit devices, RF-reflectometry which enables high-speed electric measurements is important. Here we demonstrate RF-reflectometry in bilayer graphene devices. We utilize a micro graphite back-gate and an undoped Si substrate to reduce the parasitic capacitance which degrades the RF-reflectometry. We measure the resonance properties of a tank circuit which contains the bilayer graphene device. We form RF-reflectmetory setup and compared the result with the DC measurement, and confirmed their consistency. We also measure Coulomb diamonds of quantum dots possibly formed by bubbles and confirm that RF-reflectometry of quantum dots can be performed. This technique enables high-speed measurements of bilayer graphene quantum dots and contributes to the research of bilayer graphene-based quantum devices by fast readout of the states.

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