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Tomohito Otobe

Publications and source records attributed to Tomohito Otobe.

At least 19 recordsLinked to original sources

SALMON 2.3: Implementation of divide-and-conquer ground-state initialization for large-scale real-time TDDFT

In large-scale real-time time-dependent density functional theory (TDDFT), preparing the ground-state electronic structure can be more expensive than the subsequent time propagation, limiting simulations of nonequilibrium electron dynamics in realistic systems containing thousands of atoms. This bottleneck is especially important for disordered materials, liquids, nanostructures, and heterogeneous condensed-matter systems, where nonlinear and strong-field phenomena such as high-harmonic generation and light-induced phase transitions require explicit real-time treatment. SALMON is an open-source first-principles code for light-matter interaction simulations based on real-time TDDFT on real-space grids, supporting massively parallel calculations with MPI combined with OpenMP or GPU acceleration. In SALMON 2.3, we implement a divide-and-conquer density functional theory (DC-DFT) scheme and combine it with a postprocessing method that reconstructs spatially extended Kohn-Sham orbitals of the entire system. These reconstructed global orbitals are used directly as initial states for the standard real-time, real-space TDDFT module of SALMON. The resulting workflow connects efficient DC-DFT ground-state preparation to conventional real-time TDDFT. The DC-DFT self-consistent-field procedure exhibits linear scaling with system size, addressing a major bottleneck in large-scale electron-dynamics simulations while retaining the robustness and broad applicability of SALMON's established time-propagation scheme. We describe the computational procedure, parallelization strategy, and input/output design. Weak-scaling tests using Si supercells on Fugaku confirm the linear-scaling behavior. Accuracy tests for a 512-atom amorphous Si system and a bulk H2O liquid system containing 4134 atoms demonstrate that the workflow enables practical large-scale real-time TDDFT simulations.

cond-mat.mtrl-sci

Ultrafast Spin Injection in Graphene via Dynamical Carrier Filtering at Transition Metal Dichalcogenide Interfaces

We report a real-time first-principles study of ultrafast spin injection in a WSe$_2$-graphene heterobilayer under circularly polarized laser irradiation, using time-dependent density functional theory. Contrary to conventional expectations, spin transfer into graphene is not a passive process but is actively driven by spin-selective carrier filtering at the interface. Spin-polarized carriers generated in the WSe$_2$ layer induce a preferential migration of opposite-spin carriers from graphene, which results in net spin magnetization in graphene. This process is governed by interlayer band offsets, density-of-state asymmetry, and Pauli blocking. These findings indicate a microscopic mechanism of spin injection in non-magnetic systems and identify a guiding principle for the design of ultrafast opto-spintronic functionalities in van der Waals heterostructures.

cond-mat.mtrl-sci

Electron Excitation Probability in Dielectrics under Two-color Intense Laser Fields

Two-color laser fields offer significantly enhanced control over electron excitation dynamics under ultrashort intense laser pulses compared to monochromatic fields. However, their strong nonlinearity necessitates computationally expensive first-principles calculations to accurately predict ionization dynamics. To overcome this challenge, we derive an analytical expression for the ionization rate in dielectrics subjected to intense two-color laser fields, refining the theoretical framework introduced in JPSJ {\bf 88}, 024706 (2019). By benchmarking our formula against first-principles calculations based on time-dependent density functional theory (TDDFT) for $\alpha$-quartz, we demonstrate that our model captures the essential physics of ionization dynamics with remarkable qualitative accuracy, despite employing certain approximations. This analytical approach not only provides deeper physical insight but also offers a computationally efficient alternative for predicting strong-field interactions in dielectrics.

physics.optics

SALMON VR: Visualizing Light-Matter Dynamics

This study presents SALMON VR, a visualization program designed to visualize the time evolution of electronic density changes and vector potentials in virtual reality (VR) space. The time-series electronic density data computed by SALMON are stored in CUBE format. SALMON VR processes these data to construct isosurfaces of electronic density variations and two-dimensional representations of vector potentials. Equipped with a user-friendly interface using VR technology, the program is available in two versions: one for the Meta Quest 3 head-mount display (Meta Platforms Inc., California) and one for PCs. Atoms are displayed as spheres of different sizes and colors according to their elemental properties. This visual representation facilitates a deeper understanding of the complex interactions between light and electrons. Users can easily manipulate the isosurface values, speed of animation, and color map of the vector potential. SALMON VR will enable researchers and educators to enhance their understanding of physical phenomena and improve engagement in learning environments.

cond-mat.mtrl-sci

Ultrafast Optical Control of Multi-Valley States in 2D SnS

We theoretically study the ultrafast optical control of multiple valley states in two-dimensional (2D) tin sulfide (SnS) monolayers, a member of the layered group-IV monochalcogenides, which is a promising class of materials for overcoming current challenges in valleytronics. By combining time-dependent density functional theory with Maxwells equations, we simulate how both linearly and circularly polarized ultrashort laser pulses affect the electronic excitation dynamics and valley polarization in SnS. Our results reveal that the corrugated phosphorene-like crystal structure of SnS monolayers leads to the emergence of both linear and circular dichroism, allowing flexible manipulation of multi-valley excitation by simply adjusting the light polarization. Moreover, the interplay between broken inversion symmetry and spin-orbit coupling gives rise to distinct Berry curvature effects and spin-valley coupling, thereby enabling circular dichroism. Furthermore, we propose that tuning the carrier-envelope phase of few-cycle femtosecond laser pulses can achieve sub-cycle, ultrafast switching among multiple valleys states. These findings not only deepen our understanding of valley dynamics in 2D materials but may also open new avenues for the development of valleytronic devices.

physics.optics

Maxwell-Vlasov-Uehling-Uhlenbeck (VUU) Simulation for Coupled Laser-Electron Dynamics in a Metal Irradiated by Ultrashort Intense Laser Pulses

The description of electron-electron scattering presents challenges in the microscopic modeling of the interaction of ultrashort intense laser pulses with solids. We extend the semiclassical approach based on the Vlasov equation [Phys. Rev. B 104, 075157(2021)] to account for dynamic electron-electron scattering by introducing the Vlasov-Uehling-Uhlenbeck (VUU) equation. We further couple the VUU equation with Maxwell's equations to describe the laser pulse propagation. We apply the present approach to simulate laser-electron interactions in bulk and thin-film aluminum, focusing on energy absorption and transport. Our calculation results reveal that electron-electron scattering affects energy absorption more significantly under p-polarization than under s-polarization, highlighting the role of the non-uniform surface potential. Our simulations also show that the energy transport extends beyond the optical penetration depth, which is consistent with observations in previous laser ablation experiments. The developed Maxwell-VUU approach is expected to advance the understanding of intense laser-material interactions not only as a cost-effective alternative to the time-dependent density functional theory (TDDFT), but also by incorporating fermionic two-body collisions whose description is limited in TDDFT.

physics.plasm-ph

Saturable absorption in highly excited silicon and its suppression at the surface

Nonlinear electronic excitation in laser-irradiated silicon at finite electron temperatures is numerically investigated by first-principles calculations based on the time-dependent density functional theory. In bulk silicon at finite temperatures under near-infrared laser irradiation, we found that the absorbed energy is saturated when using a certain laser intensity even with a few-cycle pulse. Although one-photon processes of conduction-to-conduction and valence-to-valence transitions are dominant at such a laser intensity, the Pauli blocking inhibits further one-photon transition. With higher intensities, multi-photon excitation across the bandgap overwhelms the one-photon excitation and the saturable absorption disappears. At the surface of finite-temperature silicon, the Pauli blocking is suppressed by the symmetry breaking and the absorbed energy is relatively enhanced from the energy of the saturable absorption in the bulk region.

cond-mat.mtrl-sci

Electron recollisional excitation of OCS$^+$ in phase-locked $\omega + 2\omega$ intense laser fields

Photoelectron-photoion coincidence momentum imaging has been performed to investigate excitation processes on dissociative ionization of OCS, OCS $\to$ OCS$^+$ + e$^-$ $\to$ OC + S$^+$ + e$^-$, in phase-locked $\omega + 2\omega$ intense laser fields. The electron kinetic energy spectra depend on coincidentally produced ion species, OCS$^+$ or S$^+$. The observed electron momentum distribution shows clear asymmetry along the laser polarization direction with a 2$\pi$-oscillation period as a function of the phase difference between the $\omega$ and $2\omega$ laser fields. The asymmetry of electron emission in the OCS$^+$ channel flips at the electron kinetic energy of 8.2 eV where the dominant scattering direction switches from forward to backward. In the S$^+$ channel, the asymmetry flips at the lower kinetic energy of 4.2 eV. In comparison with a classical trajectory Monte Carlo simulation, it has been clarified that this energy shift between the OCS$^+$ and S$^+$ channels corresponds to the excitation energy of the parent ion and that electron recollisional excitation takes place to form the fragment ion in intense laser fields.

physics.atom-ph

Influence of Point Defects on Laser-Induced Excitation in Silicon

We studied the influence of defect states on the laser excitation process in silicon using time-dependent density functional theory. We assumed two types of point defects: interstitial oxygen and silicon vacancies. We found that the photoabsorption efficiency increased with defect density in both cases owing to the color center. These defects distorted the crystal structure, thereby relaxing the selection rules and changing the indirect gap to direct. At low laser intensities, the defect states dominated the absorption process. However, as the laser intensity increased, the excitation efficiency approached that of crystalline silicon. In addition, we observed that the excitation efficiency did not scale linearly with the pulse length. Notably, in the case of Si vacancies, saturable absorption significantly reduced photoabsorption. Our results suggest that the existence of a defect and its density could be detected by even-order high-harmonics generation.

cond-mat.mtrl-sci

Strong Field Optical Hall Effect in 2D Weyl Semimetal

The study of interplay between the geometric nature of Bloch electrons and transverse responses under strong field offers new opportunities for optoelectronic applications. Here, we present a comprehensive study of the strong-field response of Weyl Dirac nodes in bilayer T'-WTe2 using time-dependent first-principles formalism. The electron dynamics is explored focusing on the mid-infrared frequency, ranging from the perturbative to nonperturbative regime. In the nonperturbative regime, the high-harmonic generation (HHG) spectra under a strong field clearly exhibit a plateau and energy cutoffs for both longitudinal and anomalous Hall (transverse) currents, with the latter being due to the large interband Berry curvature of the Weyl-Dirac semimetal. For the longitudinal harmonics, the intraband contributions increase with intensity, resulting in a complex interplay between interband polarization and intraband motions. Remarkably, if we take a comprehensive all-band perspective enabled by time-dependent density functional calculations, the anomalous Hall responses are purely attributed to the interband processes, even in the nonperturbative regime, thus Hall HHG can be crucial to understand the carrier dynamics. Our findings suggest that HHG associated with the ultrafast strong-field driven electron dynamics holds immense potential for exploring the nonlinear high Hall responses in Weyl semimetal.

cond-mat.mes-hall

Subcycle control of valley-selective excitation via dynamical Franz-Keldysh effect in WSe$_2$ monolayer

This study performed first-principles calculations based on the time-dependent density functional theory to control the valley degree of freedom relating to the dynamical Franz-Keldysh effect (DFKE) in a monolayer of transition metal dichalcogenide. By mimicking the attosecond transient absorption spectroscopy, we performed numerical pump-probe experiments to observe DFKE around the $K$ or $K'$ valley in WSe$_2$ monolayer with a linearly-polarized pump field and a circularly-polarized probe pulse. We found that the circularly-polarized probe pulse with a given helicity can selectively observe the transient conductivity modulated by DFKE in each valley. The transient conductivity and excitation probability around each valley oscillate with the pump field frequency $Ω$. The phases of the $Ω$ oscillation for the $K$ and $K'$ valleys are opposite to each other. Furthermore, the pump-driven DFKE alters the absorption rate of WSe$_2$ monolayer and yields the valley-dependent $Ω$ oscillation of the electron excitation induced by the pump plus probe field. With a simplified two-band model, we identified the $Ω$ oscillation of the off-diagonal conductivity caused by the band asymmetry around the valleys as the physical mechanism responsible for the valley-selective DFKE.

cond-mat.mtrl-sci

Enhancement of valley selective excitation by a linearly polarized two-color laser pulse

Here we proposed the valley selective excitations via a two-color (\ensuremathω + \ensuremath{2ω}) laser field, made by superimposing two linearly polarized pulses at frequencies \ensuremathω and \ensuremath{2ω}. We have studied the intensity ratio between a few-cycle pulse of \ensuremathω and \ensuremath{2ω} laser, and its enhancement factor by employing the time-dependent first-principle calculations. The valley polarization depends on the carrier envelope phases (CEPs) of pulses and the intensity ratio $I_ω/I_{2ω}$. We found that the two-color field enhances the valley polarization as much as 1.2 times larger than the single-color pulse. The maximum valley asymmetry is achieved for the intensity ratio $I_ω/I_{2ω}$ of 36 with the relative CEP of \ensuremathπ. In our previous work, we found that the asymmetric vector potential induces the valley polarization (Phys. Rev. B 105,115403 (2022)). In this work, we find that the asymmetry of the electric field modulates the valley polarization. Our two-color scheme offers a new path toward the optical control of valley pseudospins. \end{abstract}

physics.optics

Molecular dynamics study of electronic temperature effects on the laser ablation of silicon

The molecular dynamics (MD) approach is an effective tool for investigating atomistic dynamical phenomena at the surface of materials under strong laser irradiation. Therefore, numerous laser ablation MD simulation studies have been conducted to date. However, in most MD studies, non-thermal and entropic effects via hot electrons on interatomic interactions that could cause significant differences in the simulation results are not considered. In this study, the MD simulation of the laser ablation of the Si surface was conducted using an interatomic potential whose parameters depended on the electronic temperature. Moreover, the results obtained with and without electronic temperature dependence were compared. The electronic temperature dependence resulted in an approximately four-times-greater compressive pressure near the surface, enhanced evaporation of atomic or smaller clusters, and slightly longer melt depth. Compared to the strong compressive pressure near the surface, the tensile pressure, which originated from the reflection of the compressive pressure wave at the surface, and ablation phenomena were less dependent on the electronic temperature.

cond-mat.mtrl-sci

Propagation effects in high-harmonic generation from dielectric thin films

Theoretical investigation is conducted of high-order harmonic generation (HHG) in silicon thin films to elucidate the effect of light propagation in reflected and transmitted waves. The first-principles simulations are performed of the process in which an intense pulsed light irradiates silicon thin films up to 3 $μ$m thickness. Our simulations are carried within the time-dependent density functional theory (TDDFT) with the account of coupled dynamics of the electromagnetic fields and the electronic motion. It was found that the intensity of transmission HHG gradually decreases with the thickness, while the reflection HHG becomes constant from a certain thickness. Detailed analyses show that transmission HHG have two origins: the HHG generated near the front edge and propagating to the back surface, and that generated near the back edge and emitted directly. The dominating mechanism of the transmission HHG is found to depend on the thickness of the thin film and the frequency of the HHG. At the film thickness of 1 $μ$m, the transmission HHG with the frequency below 20 eV is generated near the back edge, while that with the frequency above 20 eV is generated near the front edge and propagates from there to the back surface.

cond-mat.mtrl-sci

Wavelength dependence of laser-induced excitation dynamics in silicon

Effect of laser wavelength on the carrier-phonon dynamics and damage threshold of silicon is studied numerically. Laser excitation dynamics in silicon is studied using Three-Temperature Model (3TM). We consider the evolution of electron, hole, and lattice temperatures separately and including band-gap re-normalization effect on optical properties of silicon. Finite Difference Time Domain method is used to model the laser field. Damage threshold calculated using the 3TM is in reasonable agreement with the experiments. Our results indicate that the competition of inter-band excitation, plasma heating, and electron-phonon relaxation process defines the damage threshold for various wavelengths and pulse durations.

physics.optics

Three-temperature modeling of laser-induced damage process in silicon

Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results for damage threshold reproduce the experimental results not only quantitatively, but qualitatively as well, showing dependence on laser pulse duration. Comparison with experimental data suggests that electron emission and thermal melting are both responsible for damage in silicon. We found that electron-phonon relaxation time has a significant effect on pulse duration dependence of electron emission.

physics.optics

Electron excitation rate in dielectrics under an intense elliptically polarized laser field

Electron excitation in dielectrics is studied for an elliptically polarized laser field. As the first step, we develop an analytical formula for electron excitation rate under elliptically polarized laser as the extension of our previous work [T.Otobe et. al., JPSJ88(2019) 024709]. In the next step, we calculate the excitation rate depending on the band structure by assuming direction dependence of reduced mass. We find that although the ellipticity decreases the excitation rate significantly in an isotropic system, the energy oscillation of electrons due to the intra-band dynamics in the anisotropic band structure increases the excitation rate with higher ellipticity. Our results indicate that we can control the excitation rate in dielectrics by varying the ellipticity, depending on the band anisotropy.

physics.optics

Nonlinear dynamics of electromagnetic field and valley polarization in WSe$_{2}$ monolayer

Linear and nonlinear optical response of WSe$_{2}$ monolayer is investigated by two-dimensional Maxwell plus time-dependent density functional theory with spin-orbit interaction. By applying the chiral resonant pulses, the electron dynamics along with high harmonic generation are examined at weak and strong laser fields. WSe$_{2}$ monolayer shows the linear optical response at the intensity I = 10$^{10}$~W/cm$^{2}$ while a complex nonlinear behavior is observed at I = 10$^{12}$~W/cm$^{2}$. The nonlinear response of WSe$_{2}$ monolayer in terms of saturable absorption is observed at strong laser field. By changing the chirality of the resonant light, a strong circular dichroic effect is observed in the excited state population. A relatively weak laser field shows effective valley polarization while strong field induces spin-polarized carrier peak between $K$($K'$) and $\mathitΓ$-point via nonlinear process. On the other hand, the strong laser field shows high harmonics up to the 11th order. Our results demonstrate that circularly polarized resonant pulse generate high harmonics in WSe$_{2}$ monolayer of order 3n$\pm1$.

cond-mat.mtrl-sci