arXiv subjects

Tomoya Ono

Publications and source records attributed to Tomoya Ono.

At least 37 records · Page 2Linked to original sources

arXiv2015

First-principles calculation method for electron transport based on grid Lippmann-Schwinger equation

We develop a first-principles electron-transport simulator based on the Lippmann--Schwinger (LS) equation within the framework of the real-space finite-difference scheme. In our fully real-space based LS (grid LS) method, the ratio expression technique for the scattering wave functions and the Green's function elements of the reference system is employed to avoid numerical collapse. Furthermore, we present analytical expressions and/or prominent calculation procedures for the retarded Green's function, which are utilized in the grid LS approach. In order to demonstrate the performance of the grid LS method, we simulate the electron-transport properties of the semiconductor/oxide interfaces sandwiched between semi-infinite metal electrodes. The results confirm that the leakage current through the (001)Si/SiO$_2$ model becomes much larger when the dangling-bond (DB) state is induced by a defect in the oxygen layer while that through the (001)Ge/GeO$_2$ model is insensitive to the DB state.

cond-mat.mes-hall↗

arXiv2015

Efficient numerical solver for first-principles transport calculation based on real-space finite-difference method

We propose an efficient procedure to obtain Green's functions by combining the shifted conjugate orthogonal conjugate gradient (shifted COCG) method with the nonequilibrium Green's function (NEGF) method based on a real-space finite-difference (RSFD) approach. The bottleneck of the computation in the NEGF scheme is matrix inversion of the Hamiltonian including the self-energy terms of electrodes to obtain perturbed Green's function in the transition region. This procedure first computes unperturbed Green's functions and calculates perturbed Green's functions from the unperturbed ones using a mathematically strict relation. Since the matrices to be inverted to obtain the unperturbed Green's functions are sparse, complex-symmetric and shifted for a given set of sampling energy points, we can use the shifted COCG method, in which once the Green's function for a reference energy point has been calculated, the Green's functions for the other energy points can be obtained with a moderate computational cost. We calculate the transport properties of a C$_{60}$@(10,10) carbon nanotube (CNT) peapod suspended by (10,10)CNTs as an example of a large-scale transport calculation. The proposed scheme opens the possibility of performing large-scale RSFD-NEGF transport calculations using massively parallel computers without the loss of accuracy originating from the incompleteness of the localized basis set.

physics.comp-ph↗

arXiv2015

Electron-transport properties of ethyne-bridged diphenyl zinc-porphyrin molecules

We investigate the electron-transport properties of ethyne-bridged diphenyl zinc-porphyrin molecules suspended between gold (111) electrodes by first-principles calculations within the framework of density functional theory. It is found that the conductance of a molecular junction in which phenyl and porphyrin rings are perpendicular is reduced by three orders of magnitude compared with that of a junction in which the phenyl and porphyrin rings are coplanar. In the coplanar configuration, electrons are transmitted through $π$ states, which extend over the whole molecule. In the perpendicular configuration, the conductance is suppressed because of the reduction of electron hopping between $π$ states of the phenyl ring and $σ$ states of the porphyrin ring.

cond-mat.mtrl-sci↗

arXiv2013

First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces

The scattering potential of the defects on Ge(001) surfaces is investigated by first-principles methods. The standing wave in the spatial map of the local density of states obtained by wave function matching is compared to the image of the differential conductance measured by scanning tunneling spectroscopy. The period of the standing wave and its phase shift agree with those in the experiment. It is found that the scattering potential becomes a barrier when the electronegativity of the upper atom of the dimer is larger than that of the lower atom, while it acts as a well in the opposite case.

cond-mat.mtrl-sci↗

arXiv2012

First-principles transport calculation method based on real-space finite-difference nonequilibrium Green's function scheme

We demonstrate an efficient nonequilibrium Green's function transport calculation procedure based on the real-space finite-difference method. The direct inversion of matrices for obtaining the self-energy terms of electrodes is computationally demanding in the real-space method because the matrix dimension corresponds to the number of grid points in the unit cell of electrodes, which is much larger than that of sites in the tight-binding approach. The procedure using the ratio matrices of the overbridging boundary-matching technique [Phys. Rev. B {\bf 67}, 195315 (2003)], which is related to the wave functions of a couple of grid planes in the matching regions, greatly reduces the computational effort to calculate self-energy terms without losing mathematical strictness. In addition, the present procedure saves computational time to obtain Green's function of the semi-infinite system required in the Landauer-Büttiker formula. Moreover, the compact expression to relate Green's functions and scattering wave functions, which provide a real-space picture of the scattering process, is introduced. An example of the calculated results is given for the transport property of the BN ring connected to (9,0) carbon nanotubes. The wave function matching at the interface reveals that the rotational symmetry of wave functions with respect to the tube axis plays an important role in electron transport. Since the states coming from and going to electrodes show threefold rotational symmetry, the states in the vicinity of the Fermi level, whose wave function exhibits fivefold symmetry, do not contribute to the electron transport through the BN ring.

cond-mat.mtrl-sci↗

arXiv2011

Fully spin-dependent transport of triangular graphene flakes

The magnetic moment and spin-polarized electron transport properties of triangular graphene flakes surrounded by boron nitride sheets (BNC structures) are studied by using first-principles calculations based on density functional theory. Their dependence on the BNC structure is discussed, revealing that small isolated graphene flakes have large magnetic moment. When the BNC structure is suspended between graphene electrodes, the spin-polarized charge density distribution accumulates at the edge of the graphene flakes and no spin polarization is observed in the graphene electrodes. We also found that the BNC structure demonstrates perfectly spin-polarized transport properties in the wide energy window around the Fermi level. Our first-principles results indicate that the BNC structure provides new possibilities to electrically control spin.

cond-mat.mtrl-sci↗

arXiv2011

First-principles study on atomic configuration of electron-beam irradiated C$_{60}$ clusters

A theoretical study proposes the atomic configuration of electron-beam irradiated C$_{60}$ thin films. We examined the electronic structure and electron-transport properties of the C$_{60}$ clusters using density-functional calculations and found that a rhombohedral C$_{60}$ polymer with $sp^3$-bonded dumbbell-shaped connections at the molecule junction is a semiconductor with a narrow band gap while the polymer changes to exhibit metallic behavior by forming $sp^2$-bonded peanut-shaped connections. Conductance below the Fermi level increases and the peak of the conductance spectrum arising from the $t_{u1}$ states of a C$_{60}$ molecule becomes obscure after the connections are rearranged. The present rohmbohedral film, including the [2+2] four-membered rings and peanut-shaped connections, is a candidate to represent the structure of the metallic C$_{60}$ polymer at the initial stage of electron-beam irradiation.

cond-mat.mtrl-sci↗

arXiv2011

First-Principles Study on Structural Properties of GeO$_2$ and SiO$_2$ under Compression and Expansion Pressure

The detailed analysis of the structural variations of three GeO$_2$ and SiO$_2$ polymorphs ($α$-quartz, $α$-cristobalite, and rutile) under compression and expansion pressure is reported. First-principles total-energy calculations reveal that the rutile structure is the most stable phase among the phases of GeO$_2$, while SiO$_2$ preferentially forms quartz. GeO$_4$ tetrahedras of quartz and cristobalite GeO$_2$ phases at the equilibrium volume are more significantly distorted than those of SiO$_2$. Moreover, in the case of quartz GeO$_2$ and cristobalite GeO$_2$, all O-Ge-O bond angles vary when the volume of the GeO$_2$ bulk changes from the equilibrium point, which causes further deformation of tetrahedra. In contrast, the tilt angle formed by Si-O-Si in SiO$_2$ markedly changes. This flexibility of the O-Ge-O bonds reduces the stress at the Ge/GeO$_2$ interface due to the lattice-constant mismatch and results in the low defective interface observed in the experiments [Matsubara \textit{et al.}: Appl. Phys. Lett. \textbf{93} (2008) 032104; Hosoi \textit{et al.}: Appl. Phys. Lett. \textbf{94} (2009) 202112].

cond-mat.mtrl-sci↗

arXiv2011

New structural model for GeO2/Ge interface: A first-principles study

First-principles modeling of a GeO2/Ge(001) interface reveals that sixfold GeO2, which is derived from cristobalite and is different from rutile, dramatically reduces the lattice mismatch at the interface and is much more stable than the conventional fourfold interface. Since the grain boundary between fourfold and sixfold GeO2 is unstable, the sixfold GeO2 forms a large grain at the interface. On the contrary, a comparative study with SiO2 demonstrates that SiO2 maintains a fourfold structure. The sixfold GeO2/Ge interface is shown to be a consequence of the ground-state phase of GeO2. In addition, the electronic structure calculation reveals that sixfold GeO2 at the interface shifts the valence band maximum far from the interface toward the conduction band.

cond-mat.mtrl-sci↗

arXiv2010

Novel time-saving first-principles calculation method for electron-transport properties

We present a time-saving simulator within the framework of the density functional theory to calculate the transport properties of electrons through nanostructures suspended between semi-infinite electrodes. By introducing the Fourier transform and preconditioning conjugate-gradient algorithms into the simulator, a highly efficient performance can be achieved in determining scattering wave functions and electron-transport properties of nanostructures suspended between semi-infinite jellium electrodes. To demonstrate the performance of the present algorithms, we study the conductance of metallic nanowires and the origin of the oscillatory behavior in the conductance of an Ir nanowire. It is confirmed that the $s$-$d_{z^2}$ channel of the Ir nanowire exhibits the transmission oscillation with a period of two-atom length, which is also dominant in the experimentally obtained conductance trace.

cond-mat.mtrl-sci↗

arXiv2010

First-principles electronic-structure calculation of dangling bonds at Si/SiO$_2$ and Ge/GeO$_2$ interfaces

Evidence of the absence of the clear electron spin-resonance signal from Ge dangling bonds (DBs) at Ge/GeO$_2$ interfaces is explored by means of first-principles electronic-structure calculations. Comparing the electronic structures of the DBs at Si/SiO$_2$ and Ge/GeO$_2$ interfaces, we found that the electronic structure of the Ge-DB is markedly different from that of the Si-DB; the Ge-DB states does not position in the energy band gap of the Ge/GeO$_2$ interface while the Si-DB states clearly appears. In addition, the charge density distribution of the Ge-DB state spreads more widely than that of the Si-DB state. These features are explained by considering the metallic properties of the bonding network of the Ge/GeO$_2$ interface and the structural deformation of the Ge bulk at the Ge/GeO$_2$ interface due to the lattice-constant mismatch.

cond-mat.mtrl-sci↗

arXiv2010

Real-space electronic-structure calculations with full-potential all-electron precision for transition-metals

We have developed an efficient computational scheme utilizing the real-space finite-difference formalism and the projector augmented-wave (PAW) method to perform precise first-principles electronic-structure simulations based on the density functional theory for systems containing transition metals with a modest computational effort. By combining the advantages of the time-saving double-grid technique and the Fourier filtering procedure for the projectors of pseudopotentials, we can overcome the egg box effect in the computations even for first-row elements and transition metals, which is a problem of the real-space finite-difference formalism. In order to demonstrate the potential power in terms of precision and applicability of the present scheme, we have carried out simulations to examine several bulk properties and structural energy differences between different bulk phases of transition metals, and have obtained excellent agreement with the results of other precise first-principles methods such as a plane wave based PAW method and an all-electron full-potential linearized augmented plane wave (FLAPW) method.

cond-mat.mtrl-sci↗

arXiv2009

First-Principles Study on Leakage Current through Si/SiO$_2$ Interface

The relationship between the presence of defects at the stacking structure of the Si/SiO$_2$ interface and leakage current is theoretically studied by first-principles calculation. I found that the leakage current through the interface with dangling bonds is 530 times larger than that without any defects, which is expected to lead to dielectric breakdown. The direction of the dangling bonds is closely related to the performance of the oxide as an insulator. In addition, it is proved that the termination of the dangling bonds by hydrogen atoms is effective for reducing the leakage current.

cond-mat.mtrl-sci↗

arXiv2009

First-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO$_2$ Interfaces

We present the evidence of the low defect density at Ge/GeO$_2$ interfaces in terms of first-principles total energy calculations. The energy advantages of the atom emission from the Ge/GeO$_2$ interface to release the stress due to the lattice mismatch are compared with those from the Si/SiO$_2$ interface. The energy advantages of the Ge/GeO$_2$ are found to be smaller than those of the Si/SiO$_2$ because of the high flexibility of the bonding networks in GeO$_2$. Thus, the suppression of the Ge-atom emission during the oxidation process leads to the improved electrical properties of the Ge/GeO$_2$ interfaces.

cond-mat.mtrl-sci↗

arXiv2008

First-principles calculation of electronic polarization of III-V nanotubes

A first-principles study of the electronic polarization of BN and AlN nanotubes and their graphitic sheets under an external electric field has been performed. We found that the polarization per atom of zigzag nanotubes increases with decreasing diameter while that of armchair nanotubes decreases. The variation of the polarization is related to the exterior angle of the bonds around the B or Al atoms rather than that around the N atoms. The increase in the polarization of the zigzag nanotubes with decreasing diameter is caused by the large variation of the exterior angle when they are wrapped into the tubular form. On the other hand, the decrease in the bond length results in the weak polarization of thin armchair nanotubes.

cond-mat.mtrl-sci↗

arXiv2008

Even-odd oscillation of conductance of 5{\it d} metal atomic nanowires

The electron-transport properties of single-row monoatomic nanowires made of 5$d$ elements are examined by first-principles calculations based on the density functional theory. We found that oscillation patterns with a period longer than two-atom length are dominant in the conductance of Ir and Pt monoatomic nanowires, although the transmission of the $s$-$d_{z^2}$ channel still exhibits even-odd oscillatory behavior. When the nanowires are deformed into zigzag configurations from the straight configuration, the oscillation behavior of the patterns with long periods changes and the oscillations eventually disappear. On the other hand, the even-odd oscillatory behavior of the $s$-$d_{z^2}$ channel still survives even in the deformed nanowire. The even-odd oscillation in the conductance of Ir and Pt nanowires is interpreted to be due to the low sensitivity of the oscillation of the $s$-$d_{z^2}$ channel to the spatial deformation of the nanowires.

cond-mat.mtrl-sci↗

arXiv2006

First-Principles Study on Electron-Conduction Properties of C$_{60}$ Chains

The electron-conduction properties of fullerene chains are examined by first-principles calculations based on the density functional theory. The conductivity of the C$_{60}$ dimer is low owing to the constraint of the junction of the molecules on electron conduction, whereas the C$_{60}$ monomer exhibits a conductance of $\sim$ 1 G$_0$. One of the three degenerate $t_{u1}$ states of C$_{60}$ is relevant to conduction and the contributions of the others are small. In addition, we found a more interesting result that the conductance of the fullerene chain is drastically increased by encapsuling metal atoms into cages.

cond-mat.mtrl-sci↗

arXiv2006

First-principles study of tunnel current between scanning tunneling microscopy tip and hydrogen-adsorbed Si(001) surface

A scanning tunneling microscopy (STM) image of a hydrogen-adsorbed Si(001) surface is studied using first-principles electron-conduction calculation. The resultant STM image and scanning tunneling spectroscopy spectra are in agreement with experimental results. The contributions of the $π$ states of bare dimers to the tunnel current are markedly large, and the $σ$ states of the dimers rarely affect the STM images. The tunnel currents do not pass through the centers of the dimers but go through the edges of the dimers with local loop currents. In addition, when the tip exists above the hydrogen-adsorbed dimer, there are certain contributions from the $π$ state of the adjacing bare dimers to the tunnel current. This leads to the STM image in which the hydrogen-adsorbed dimers neighboring bare dimers look higher than those surrounded by hydrogen-adsorbed dimers. These results are consistent with the experimental images observed by STM.

cond-mat.mtrl-sci↗