Magnetic-field controlled organic spintronic memristor for neural network computation
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic computing systems inspired by the human brain. In this study, we present a novel organic spintronic memristor based on a La0.67Sr0.33MnO3 (LSMO)/poly(vinylidene fluoride) (PVDF)/Co heterostructure, exhibiting biologically inspired synaptic behavior. Driven by fluorine atom migration within the PVDF layer, the device demonstrates both long-term depression (LTD) and long-term potentiation (LTP) under controlled electrical polarization. Distinctively, the resistance states can also be modulated by an external magnetic field via the tunneling magnetoresistance (TMR) effect, introducing a non-electrical means of tuning synaptic plasticity. This magnetic control mechanism enables multi-state modulation without compromising device performance or endurance. Furthermore, convolutional neural network (CNN) simulations incorporating this magnetic tuning capability reveal enhanced pattern recognition accuracy and improved training stability, especially at high learning rates. These findings underscore the potential of organic spintronic memristors as high-performance, low-power neuromorphic elements, particularly suited for applications in flexible and wearable electronics.