arXiv subjects

Tony Low

Publications and source records attributed to Tony Low.

At least 91 records · Page 5Linked to original sources

arXiv2020

Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

cond-mat.mtrl-sci↗

arXiv2019

Mid-infrared polarized emission from black phosphorus light-emitting diodes

The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6-3.8 $μ$m, which are ideal for free-space optical communication, range finding and thermal imaging. A number of different semiconductor platforms have been used for MIR light-emission. This includes InAsSb/InAs quantum wells, InSb/AlInSb, GaInAsSbP pentanary alloys, and intersubband transitions in group III-V compounds. These approaches, however, are costly and lack the potential for integration on silicon and silicon-on-insulator platforms. In this respect, two-dimensional (2D) materials are particularly attractive due to the ease with which they can be heterointegrated. Weak interactions between neighbouring atomic layers in these materials allows for deposition on arbitrary substrates and van der Waals heterostructures enable the design of devices with targeted optoelectronic properties. In this Letter, we demonstrate a light-emitting diode (LED) based on the 2D semiconductor black phosphorus (BP). The device, which is composed of a BP/molybdenum disulfide (MoS$_2$) heterojunction emits polarized light at $λ$ = 3.68 $μ$m with room-temperature internal and external quantum efficiencies (IQE and EQE) of ~1$\%$ and $\sim3\times10^{-2}\%$, respectively. The ability to tune the bandgap, and consequently emission wavelength of BP, with layer number, strain and electric field make it a particularly attractive platform for MIR emission.

physics.app-ph↗

arXiv2019

Nonretarded edge plasmon-polaritons in anisotropic two-dimensional materials

By an integral equation approach to the time-harmonic classical Maxwell equations, we describe the dispersion in the nonretarded frequency regime of the edge plasmon-polariton (EPP) on a semi-infinite flat sheet. The sheet has an arbitrary, physically admissible, tensor valued and spatially homogeneous conductivity, and serves as a model for a family of two-dimensional conducting materials. We formulate a system of integral equations for the electric field tangential to the sheet in a homogeneous and isotropic ambient medium. We show how this system is simplified via a length scale separation. This view entails the quasi-electrostatic approximation, by which the tangential electric field is replaced by the gradient of a scalar potential, $φ$. By the Wiener-Hopf method, we solve an integral equation for $φ$ in some generality. The EPP dispersion relation comes from the elimination of a divergent limiting Fourier integral for $φ$ at the edge. We connect the existence, or lack thereof, of the EPP dispersion relation to the index for Wiener-Hopf integral equations, an integer of topological character. We indicate that the values of this index may express an asymmetry due to the material anisotropy in the number of wave modes propagating on the sheet away from the edge with respect to the EPP direction of propagation. We discuss extensions such as the setting of two semi-infinite, coplanar sheets. Our theory forms a generalization of the treatment by Volkov and Mikhailov (1988 Sov. Phys. JETP 67 1639).

math-ph↗

arXiv2019

Engineering quantum interference in van der Waals heterostructures

In this paper, we present a novel route to tunable spontaneous valley coherence in heterostructures of two dimensional valleytronic materials with other layered materials hosting anisotropic polaritonic modes. We first discuss the dependence of this coherence on the conductivity tensor of the anisotropic part of a general heterostructure and on its geometrical configuration. Subsequently, we propose two implementations - one, using anisotropic plasmons in phosphorene and another with hyperbolic phonon polaritons in MoO3. In both these systems we show for the first time electrostatic tunability of the spontaneous valley coherence achieving unprecedented values of up to 80% in the near to mid infrared wavelengths at room temperature. The tunability of this valley coherence shown in these heterostructures will enable the realization of active valleytronic quantum circuitry.

cond-mat.mes-hall↗

arXiv2019

Magnetic Weyl semimetals with diamond structure realized in spinel compounds

Diamond-structure materials have been extensively studied for decades, which form the foundation for most semiconductors and their modern day electronic devices. Here, we discover a e$_g$-orbital ($d_{z^2}$,$d_{x^2-y^2}$ ) model within the diamond lattice (e$_g$-diamond model) that hosts novel topological states. Specifically, the e$_g$-diamond model yields a 3D nodal cage (3D-NC), which is characterized by a $d$-$d$ band inversion protected by two types of degenerate states (i.e., e$_g$-orbital and diamond-sublattice degeneracies). We demonstrate materials realization of this model in the well-known spinel compounds (AB$_2$X$_4$), where the tetrahedron-site cations (A) form the diamond sub-lattice. An ideal half metal with one metallic spin channel formed by well-isolated and half-filled e$_g$-diamond bands, accompanied by a large spin gap (4.36 eV) is discovered in one 4-2 spinel compound (VMg$_2$O$_4$), which becomes a magnetic Weyl semimetal when spin-orbit coupling effect is further considered. Our discovery greatly enriches the physics of diamond structure and spinel compounds, opening a door to their application in spintronics.

cond-mat.mtrl-sci↗

arXiv2019

Plasmonic-based gas sensing with graphene nanoribbons

The main challenge to exploiting plasmons for gas vibrational mode sensing is the extremely weak infrared absorption of gas species. In this work, we explore the possibility of trapping free gas molecules via surface adsorption, optical, or electrostatic fields to enhance gas-plasmon interactions and to increase plasmon sensing ability. We discuss the relative strengths of these trapping forces and found gas adsorption in a typical nanoribbon array plasmonic setup produces measurable dips in optical extinction of magnitude 0.1 % for gas concentration of about parts per thousand level.

cond-mat.mes-hall↗

arXiv2019

Electron and hole transport in disordered monolayer MoS2: atomic vacancy-induced short-range and Coulomb disorder scattering

Atomic disorder is a common limiting factor for the low-temperature mobility in monolayer transition-metal dichalcogenides (TMDs; MX2). Here, we study the effect of often occurring atomic vacancies on carrier scattering and transport in p- and n-type monolayer MoS2. Due to charge trapping in vacancy-induced in-gap states, both neutral and charged vacancies resembling, respectively, short-range and combined short-range and long-range Coulomb scatterers, must be considered. Using the T-matrix formalism, we demonstrate a strong renormalization of the Born description of short-range scattering, manifested in a pronounced reduction and a characteristic energy dependence of the scattering rate. As a consequence, carrier scattering in TMDs with charged vacancies is dominated by the long-range Coulomb-disorder scattering, giving rise to a strong screening-induced temperature and density dependence of the low-temperature carrier mobility. For TMDs with neutral vacancies, the absence of intrinsic Coulomb disorder results in significantly higher mobilities as well as an unusual density dependence of the mobility which decreases with the carrier density. Our work illuminates the transport-limiting effects of atomic-vacancy scattering relevant for high-mobility TMD devices.

cond-mat.mes-hall↗

arXiv2019

Controlling photonic spin Hall effect via exceptional points

The photonic spin Hall effect (SHE), featured by a spin-dependent transverse shift of an impinging optical beam driven by its polarization handedness, has many applications including precise metrology and spin-based nanophotonic devices. It is highly desirable to control and enhance the photonic SHE. However, such a goal remains elusive, due to the weak spin-orbit interaction of light, especially for systems with optical loss. Here we reveal a flexible way to modulate the photonic SHE via exceptional points, by exploiting the transverse shift in a parity-time (PT) symmetric system with balanced gain and loss. The underlying physics is associated with the near-zero value and abrupt phase jump of the reflection coefficients at exceptional points. We find that the transverse shift is zero at exceptional points, but it is largely enhanced in their vicinity. In addition, the transverse shift switches its sign across the exceptional point, resulting from spontaneous PT-symmetry breaking. Due to the sensitivity of transverse shift at exceptional points, our work also indicates that the photonic SHE can enable a precise way to probe the location of exceptional point in photonic systems.

physics.optics↗

arXiv2019

Switchable and unidirectional plasmonic beacons in hyperbolic 2D materials

In hyperbolic 2D materials, energy is channeled to their deep subwavelength polaritonic modes via four narrow beams. Here we consider the launching of surface polaritons in the hyperbolic 2D materials and demonstrate that efficient uni-directional excitation is possible with an elliptically polarized electric dipole, with the optimal choice of dipole ellipticity depending on the materials optical constants. The selection rules afforded by the choice of dipole polarization allow turning off up to two beams, and even three if the dipole is placed close to an edge. This makes the dipole a directionally switchable beacon for the launching of sub-difractional polaritonic beams, a potential logical gate. We develop an analytical approximation of the excitation process which describes the results of the numerical simulations well and affords a simple physical interpretation.

cond-mat.mes-hall↗

arXiv2019

Topological Nonlinear Anomalous Nersnt Effect in Strained Transition Metal Dichalcogenides

We theoretically analyze the non-linear anomalous Nernst effect as the second-order response of temperature gradient by using the semiclassical framework of electron dynamics. We find that a non-linear current can be generated transverse to the applied temperature gradient in time-reversal-symmetry materials with broken inversion symmetry. This effect has a quantum origin arising from the Berry curvature of states near the Fermi surface. We discuss the non-linear Nernst effect in transition metal dichalcogenides~(TMDCs) under the application of uniaxial strain. In particular, we predict that under fixed chemical potential in TMDCs, the non-linear Nernst current exhibits a transition from $\textbf{j}^\text{dip}_\text{A}\sim T^{-2}$ temperature dependence in low temperature regime to a linear $T$-dependence in high temperature.

cond-mat.mes-hall↗

arXiv2018

Tuning 2D hyperbolic plasmons in black phosphorus

Black phosphorus presents a very anisotropic crystal structure, making it a potential candidate for hyperbolic plasmonics, characterized by a permittivity tensor where one of the principal components is metallic and the other dielectric. Here we demonstrate that atomically thin black phosphorus can be engineered to be a hyperbolic material operating in a broad range of the electromagnetic spectrum from the entire visible spectrum to ultraviolet. With the introduction of an optical gain, a new hyperbolic region emerges in the infrared. The character of this hyperbolic plasmon depends on the interplay between gain and loss along the two crystalline directions.

cond-mat.mtrl-sci↗

arXiv2018

Berry curvature dipole current in transition metal dichalcogenides family

We study the quantum nonlinear Hall effect in two-dimensional materials with time-reversal symmetry. When only one mirror line exists, a transverse charge current occurs in second-order response to an external electric field, as a result of the Berry curvature dipole in momentum space. Candidate 2D materials to observe this effect are two-dimensional transition-metal dichalcogenides~(TMDCs). First we use an ab initio based tight-binding approach to demonstrate that monolayer $T_d$-stricture TMDCs exhibit a finite Berry curvature dipole. In the $1H$ and $1T'$ phase of TMDCs, we show the emergence of finite Berry curvature dipole with the application of strain and electrical displacement field respectively.

cond-mat.mes-hall↗

arXiv2018

Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but few device configurations has been explored for a deterministic control of a space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible - near-infrared, zero-bias and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, with quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this study is the first demonstration of post-fabrication-free two-dimensional material active silicon photonic devices.

physics.app-ph↗

arXiv2018

Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures

Vertically stacked van der Waals heterostructures constitute a promising platform for providing tailored band alignment with enhanced excitonic systems. Here we report observations of neutral and charged interlayer excitons in trilayer WSe2-MoSe2-WSe2 van der Waals heterostructures and their dynamics. The addition of a WSe2 layer in the trilayer leads to significantly higher photoluminescence quantum yields and tunable spectral resonance compared to its bilayer heterostructures at cryogenic temperatures. The observed enhancement in the photoluminescence quantum yield is due to significantly larger electron-hole overlap and higher light absorbance in the trilayer heterostructure, supported via first-principle pseudopotential calculations based on spin-polarized density functional theory. We further uncover the temperature- and power-dependence, as well as time-resolved photoluminescence of the trilayer heterostructure interlayer neutral excitons and trions. Our study elucidates the prospects of manipulating light emission from interlayer excitons and designing atomic heterostructures from first-principles for optoelectronics.

cond-mat.mes-hall↗

arXiv2018

Plasmons in bias-induced topological phase transition in black phosphorus

We investigate the plasmons in bilayer black phosphorus (BP) with bias-driven formation of Dirac cones, by developing an effective two-band Hamiltonian that captures this electronic transition with great accuracy. We show that the appearance of the Dirac cones lead to additional linearly dispersing acoustic plasmon mode, in conjunction to the conventional plasmon. In addition, the change in the Fermi surface topology from a disc to ring or dual pockets also modifies the dielectric loss.

cond-mat.mtrl-sci↗

arXiv2018

Large-scale defects hidden inside a topological insulator grown onto a 2D substrate

Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismuth chalcogenides offers efficient spin-to-charge conversion because of its large spin-orbit coupling and spin-momentum locking of surface states. However, a major obstacle to realizing the promise of TIs is the thin-film materials' quality, which lags behind that of epitaxially grown semiconductors. In contrast to the latter systems, the Bi-chalcogenides form by van der Waals epitaxy, which allows them to successfully grow onto substrates with various degrees of lattice mismatch. This flexibility enables the integration of TIs into heterostructures with emerging materials, including two-dimensional materials. However, understanding and controlling local features and defects within the TI films is critical to achieving breakthrough device performance. Here, we report observations and modeling of large-scale structural defects in (Bi,Sb)$_2$Te$_3$ films grown onto hexagonal BN, highlighting unexpected symmetry-breaking rotations within the films and the coexistence of a second phase along grain boundaries. Using first-principles calculations, we show that these defects could have consequential impacts on the devices that rely on these TI films, and therefore they cannot be ignored.

cond-mat.mtrl-sci↗

arXiv2018

Tin monochalcogenide heterostructures as mechanically rigid infrared bandgap semiconductors

Based on first-principles density functional calculations, we show that SnS and SnSe layers can form mechanically rigid heterostructures with the constituent puckered or buckled monolayers. Due to the strong interlayer coupling, the electronic wavefunctions of the conduction and valence band edges are delocalized across the heterostructure. The resultant bandgap of the heterostructures reside in the infrared region. With strain engineering, the heterostructure bandgap undergoes transition from indirect to direct in the puckered phase. Our results show that there is a direct correlation between the electronic wavefunction and the mechanical rigidity of the layered heterostructure.

cond-mat.mtrl-sci↗

arXiv2018

Determination of layer-dependent exciton binding energies in few-layer black phosphorus

The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems. Mono- and few-layer black phosphorus (BP) are emerging two-dimensional (2D) semiconductors. Despite its fundamental importance and technological interest, experimental investigation of exciton physics has been rather limited. Here, we report the first systematic measurement of exciton binding energies in ultrahigh quality few-layer BP by infrared absorption spectroscopy, with layer (L) thickness ranging from 2-6 layers. Our experiments allow us to determine the exciton binding energy, decreasing from 213 meV (2L) to 106 meV (6L). The scaling behavior with layer number can be well described by an analytical model, which takes into account the nonlocal screening effect. Extrapolation to free-standing monolayer yields a large binding energy of ~800 meV. Our study provides insights into 2D excitons and their crossover from 2D to 3D, and demonstrates that few-layer BP is a promising high-quality optoelectronic material for potential infrared applications.

cond-mat.mes-hall↗