arXiv subjects

Torsten Hahn

Publications and source records attributed to Torsten Hahn.

4 recordsLinked to original sources

arXiv2019

Electronic structure and transport properties of coupled CdS/ZnSe quantum dots

Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled dots, the frontier occupied and unoccupied molecular orbitals are spatially located in two different parts of the coupled dot, thereby indicating the possibility of asymmetry in electronic transport. We have calculated electronic transport through the coupled quantum dot by varying the coupling strength between the individual quantum dots in the limits of weak and strong coupling. Calculations reveal asymmetric current vs voltage curves in both the limits indicating the rectifying properties of the coupled quantum dots. Additionally we discuss the possibility to tune the switching behavior of the coupled dots by different gate geometries.

cond-mat.mes-hall↗

arXiv2019

Stretched or noded orbital densities and self-interaction correction in density functional theory

Semi-local approximations to the density functional for the exchange-correlation energy of a many-electron system necessarily fail for lobed one-electron densities, including not only the familiar stretched densities but also the less familiar but closely-related noded ones. The Perdew-Zunger (PZ) self-interaction correction (SIC) to a semi-local approximation makes that approximation exact for all one-electron ground- or excited-state densities and accurate for stretched bonds. When the minimization of the PZ total energy is made over real localized orbitals, the orbital densities can be noded, leading to energy errors in many-electron systems. Minimization over complex localized orbitals yields nodeless orbital densities, which reduce but typically do not eliminate the SIC errors of atomization energies. Other errors of PZ SIC remain, attributable to the loss of the exact constraints and appropriate norms that the semi-local approximations satisfy, and suggesting the need for a generalized SIC. These conclusions are supported by calculations for one-electron densities, and for many-electron molecules. While PZ SIC raises and improves the energy barriers of standard generalized gradient approximations (GGA's) and meta-GGA's, it reduces and often worsens the atomization energies of molecules. Thus PZ SIC raises the energy more as the nodality of the valence localized orbitals increases from atoms to molecules to transition states. PZ SIC is applied here in particular to the SCAN meta-GGA, for which the correlation part is already self-interaction-free. That property makes SCAN a natural first candidate for a generalized SIC.

physics.chem-ph↗

arXiv2015

Fermi orbital self-interaction corrected electronic structure of molecules beyond local density approximation

The correction of the self-interaction error (SIE) that is inherent to all standard density functional theory (DFT) calculations is an object of increasing interest. In this article we apply the very recently developed Fermi-orbital based approach for the self-interaction correction (FOSIC) to a set of different molecular systems. Our study covers systems ranging from simple diatomic to large organic molecules. We focus our analysis on the direct estimation of the ionization potential from orbital eigenvalues.

physics.comp-ph↗

arXiv2014

Gate Controlled Molecular Switch Based on Picene/F4TCNQ Charge-Transfer Material

We show that the recently synthesized charge-transfer material picene/F4TCNQ can be used as a gate-voltage controlled molecular switch. The picene/F4TCNQ system is compared with the extensive characterized anthraquinone-based molecular system, which is known to exhibit large switching ratios due to quantum interference effects. In case of picene/F4TCNQ we find switching ratios larger by one order of magnitude. Further, our calculations reveal that the picene/F4TCNQ system resembles remarkable well the I-V characteristics of a classical diode. The reverse-bias current of this molecular diode can be increased two orders of magnitude by an external gate voltage. Based on density-functional theory calculations we show that the hybrid states formed by the picene/F4TCNQ system are playing the key role to determine the transport properties. We further conclude that the tuning of quantum transport properties through hybrid states is a general concept which opens a new route towards functional materials for molecular electronics.

cond-mat.mes-hall↗