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Toshiaki Ina

Publications and source records attributed to Toshiaki Ina.

3 recordsLinked to original sources

Re-examination of electronic structure of dilute Kondo transition-metal ions substituted into a Heavy Fermion compound

Correlations between the localized and conductive spins/charges have been the central issue of various fascinating quantum phenomena found on itinerant electron systems. Here, the obvious multiplet structures are presented on the Mn 2$p$ to 3$d$ x-ray absorption for a heavy fermion $\alpha$-(Yb,Lu)(Al$_{1-x}$Mn$_x$)B$_4$, indicating that the unoccupied electronic structure of the Mn site is described as the correlated high-spin 2+, even though magnetic measurements show the Mn sites to be nonmagnetic. This apparently paradoxical result demonstrates that a ligand field can effectively appear between localized Mn 3$d$ and surrounding B 2$p$ orbitals, which has been anticipated as a manifestation of a Kondo effect but not been clearly confirmed for most itinerant metals in spectroscopy. By contrast, the Mn 2$p$ photoemission indicates that the occupied Mn$^{2+}$ 3$d$ electrons still exhibit itinerant and nonlocally screened nature also owing to the Kondo-like correlation with the conductive B 2$p$, and heavier Yb 4$f$ and 5$d$ bands below the Fermi energy. The asymmetry on the particle-hole stimulates a reconsideration of the correlation and screening effects in the core-level spectroscopies.

cond-mat.str-el

A Potential Cathode Material for Rechargeable Potassium-Ion Batteries Inducing Manganese Cation and Oxygen Anion Redox Chemistry: Potassium-Deficient $\rm K_{0.4}Fe_{0.5}Mn_{0.5}O_2$

Potassium-ion ($\rm K$-ion) rechargeable batteries; considered to be lucrative low-cost battery options for large-scale and capacious energy storage systems, have been garnering tremendous attention in recent years. However, due to the scarcity of cathode materials that can condone the reversible re-insertion of the large $\rm K$-ions at feasible capacities, the viability of $\rm K$-ion batteries has been greatly undercut. In this paper, we explore a potential cathode material in the $\rm K_2O$-$\rm Fe_2O_3$-$\rm MnO_2$ ternary phase system, that not only demonstrates reversible $\rm K$-ion reinsertion but also manifests relatively fast rate capabilities. The titled cathode compound, $\rm K_{0.4}Fe_{0.5}Mn_{0.5}O_2$, demonstrates a reversible capacity of approximately $\rm120 $ mAh g$^{-1}$ at $\rm 10$ hours of (dis)charge ($viz.$, $\rm C/10$ rate) with $ca.$ $\rm 85$% of the capacity being retained at a $\rm 1$ hour of (dis)charge ($\rm 1 C$ rate) which is considered to be good capacity retention. Additionally, both hard and soft X-rays have been employed to unravel the mechanism by which $\rm K$-ion is reversibly inserted into $\rm K_{0.4}Fe_{0.5}Mn_{0.5}O_2$. The results revealed a cumulative participation of both manganese cations and oxygen anions in $\rm K_{0.4}Fe_{0.5}Mn_{0.5}O_2$ illustrating its potential as a high-capacity $\rm K$-ion battery cathode material that relies on both anion and cation redox. Further development of related high-capacity cathode compositions can be anticipated.

cond-mat.mtrl-sci

Ce-doping and reduction annealing effects on electronic states in Pr$_{2-x}$Ce$_{x}$CuO$_4$ studied by Cu ${K}$-edge X-ray absorption spectroscopy

We investigated Ce-substitution and reduction annealing effects on the electronic states at copper sites by Cu ${K}$-edge x-ray absorption near-edge structure measurements in Pr$_{2-x}$Ce$_x$CuO$_{4+\alpha-\delta}$ (PCCO) with varying $x$ and $\delta$ (the amount of oxygen loss during annealing) values. Absorption near-edge spectra were modified by Ce-substitution and reduction annealing in a similar manner with increasing $x$ and $\delta$. Considering electron doping by Ce-substitution, this similarity indicates an increase of electron number at the copper sites due to annealing $n_{\rm AN}$. Thus, the total number of electrons is determined by the amount of Ce and oxygen ions. Furthermore, quantitative analyses of the spectra clarified that the number of Cu$^+$ sites, corresponding to the induced electron number by Ce-substitution $n_{\rm Ce}$ increases linearly with $x$ in the as-sintered PCCO ($\delta=0$), whereas $n_{\rm AN}$ is not exactly equal to twice of $\delta$, which is expected from charge neutrality. For each $x$-fixed sample, $n_{\rm AN}$ tends to exceed 2$\delta$ with increasing $\delta$, suggesting the emergence of two types of carrier due to annealing.

cond-mat.supr-con