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Toshihito Osada

Publications and source records attributed to Toshihito Osada.

24 records · Page 2Linked to original sources

Topological Insulator State due to Finite Spin-Orbit Interaction in an Organic Dirac Fermion System

Recently, Valenti et al. pointed out the significance of the spin-orbit interaction (SOI) in organic materials, and explained the anomalous insulating behavior of a Dirac semimetal alpha-(BEDT-TTF)2I3 at low temperatures in terms of the small SOI gap. We propose a lattice model with plausible SOI coupling, and indicate that the gapped state is a topological insulator. This model is an organic analogue of the Kane-Mele model for graphene.

cond-mat.mes-hall↗

Thickness-dependent phase transition in graphite under high magnetic field

Various electronic phases emerge when applying high magnetic fields in graphite. However, the origin of a semimetal-insulator transition at $B \simeq 30\; \textrm{T}$ is still not clear, while an exotic density-wave state is theoretically proposed. In order to identify the electronic state of the insulator phase, we investigate the phase transition in thin-film graphite samples that were fabricated on silicon substrate by a mechanical exfoliation method. The critical magnetic fields of the semimetal-insulator transition in thin-film graphite shift to higher magnetic fields, accompanied by a reduction in temperature dependence. These results can be qualitatively reproduced by a density-wave model by introducing a quantum size effect. Our findings establish the electronic state of the insulator phase as a density-wave state standing along the out-of-plane direction, and help determine the electronic states in other high-magnetic-field phases.

cond-mat.mes-hall↗

Chern Insulator Phase in a Lattice of an Organic Dirac Semimetal with Intracellular Potential and Magnetic Modulations

We demonstrate that a Chern insulator could be realized on a real two-dimensional lattice of an organic Dirac semimetal α-(BEDT-TTF)2I3 by introducing potential and magnetic modulations in a unit cell. It is a topologically-nontrivial insulator which shows the quantum Hall effect even at zero magnetic field. We assumed a pattern of site potential and staggered plaquette magnetic flux on the lattice so as to imitate the observed stripe charge ordering pattern. When the magnetic modulation is sufficiently large, the system becomes a Chern insulator, where Berry curvatures around two gapped Dirac cones have the same sign on each band, and one chiral edge state connects the conduction and valence bands at each crystal edge. The present model is an organic version of Haldane's model, which discussed the Chern insulator on the honeycomb lattice with second nearest neighbor couplings.

cond-mat.mtrl-sci↗

Electronic Structure and the Properties of Phosphorene Systems

A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014. It has a puckered honeycomb lattice structure and a semiconducting electronic structure. In the first part of this paper, we use a simple LCAO model, and discuss qualitatively the electronic structure of phosphorene systems under electric and magnetic fields, especially, noting their midgap edge states. The next part is spent for the review of the research progress on phosphorene in the past one year since its appearance in 2014. Phosphorene has been a typical object to study the semiconductor physics in atomic layers.

cond-mat.mes-hall↗

Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System

We discuss the surface magnetotransport in the quantum Hall (QH) ferromagnetic state expected in the organic Dirac fermion system α-(BEDT-TTF)_2I_3. The QH ferromagnetic state is one of the possible ν=0 QH states in the two-dimensional Dirac fermion system resulting from the degeneracy breaking of the n=0 Landau level. It is characterized by the helical edge state. We have studied the interlayer surface transport via helical edge state in the multilayer QH ferromagnet, in which the bulk region is insulating. We have clarified that the surface conductivity is much less than e^2/h and decreases as the magnetic field is tilted to the normal direction of the side surface. These features explain the observed interlayer magnetoresistance in α-(BEDT-TTF)_2I_3.

cond-mat.mes-hall↗

Edge State and Intrinsic Hole Doping in Bilayer Phosphorene

Using a simple LCAO model by Harrison, we have qualitatively studied the edge state of bilayer phosphorene, which is a unit structure of the layered crystal of black phosphorus. This model successfully reproduces the isolated edge state in the bulk gap in monolayer phosphorene. In bilayer phosphorene, however, it shows that edge states are almost buried in the valence band and there is no isolated midgap edge state at the zigzag edge. Since the buried edge state works as acceptor, holes are doped from the edge state into the bulk. This gives a possible explanation for p-type conduction in undoped black phosphorus. Under the vertical electric field, the intrinsic hole doping is reduced because a part of edge states move into the gap. These features of bilayer phosphorene might be better suited for device application.

cond-mat.mes-hall↗