arXiv subjects

Toshimasa Fujisawa

Publications and source records attributed to Toshimasa Fujisawa.

33 records · Page 2Linked to original sources

arXiv2017

Waveform measurement of charge- and spin-density wave packets in a Tomonaga-Luttinger liquid

In contrast to a free electron system, a Tomonaga-Luttinger (TL) liquid in a one dimensional (1D) electron system hosts charge and spin excitations as independent entities. When an electron wave packet is injected into a TL liquid, it transforms into wave packets carrying either charge or spin that propagate at different group velocities and move away from each other. This process, known as spin-charge separation, is the hallmark of TL physics. While the existence of these TL eigenmodes has been identified in momentum- or frequency-resolved measurements, their waveforms, which are a direct manifestation of 1D electron dynamics, have been long awaited to be measured. In this study, we present a time domain measurement for the spin-charge-separation process in an asymmetric chiral TL liquid comprising quantum Hall (QH) edge channels. We measure the waveforms of both charge and spin excitations by combining a spin filter with a time-resolved charge detector. Spatial separation of charge- and spin-wave packets over a distance exceeding 200 um was confirmed. In addition, we found that the 1D electron dynamics can be controlled by tuning the electric environment. These experimental results provide fundamental information about non-equilibrium phenomena in actual 1D electron systems.

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arXiv2015

Shot-noise evidence of fractional quasiparticle creation in a local fractional quantum Hall state

We have experimentally identified fractional quasiparticle creation in a tunneling process through a local fractional quantum Hall (FQH) state. The local FQH state is prepared in a low-density region near a quantum point contact (QPC) in an integer quantum Hall (IQH) system. Shot-noise measurements reveal a clear transition from elementary-charge tunneling at low bias to fractional-charge tunneling at high bias. The fractional shot noise is proportional to T1(1 ? T1) over a wide range of T1, where T1 is the transmission probability of the IQH edge channel. This binomial distribution indicates that fractional quasiparticles emerge from the IQH state to be transmitted through the local FQH state. The study of this tunneling process will enable us to elucidate the dynamics of Laughlin quasiparticles in FQH systems.

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arXiv2013

Fractionalized Wave Packets from an Artificial Tomonaga-Luttinger Liquid

The model of interacting fermion systems in one dimension known as Tomonaga-Luttinger liquid (TLL) provides a simple and exactly solvable theoretical framework, predicting various intriguing physical properties. Evidence of TLL has been observed as power-law behavior in the electronic transport and momentum-resolved spectroscopy on various types of one-dimensional (1D) conductors. However, these measurements, which rely on dc transport involving tunneling processes, cannot identify the eigenmodes of the TLL, i.e., collective excitations characterized by non-trivial effective charge e* and charge velocity v*. The elementary process of charge fractionalization, a phenomenon predicted to occur at the junction of a TLL and non-interacting leads, has not been observed. Here we report time-resolved transport measurements on an artificial TLL comprised of coupled integer quantum Hall edge channels, successfully identifying single charge fractionalization processes. An electron wave packet with charge e incident from a non-interacting region breaks up into several fractionalized charge wave packets at the edges of the artificial TLL region, from which e* and v* can be directly evaluated. These results are informative for elucidating the nature of TLLs and low-energy excitations in the edge channels.

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arXiv2013

Distributed-element circuit model of edge magnetoplasmon transport

We report experimental and theoretical studies of edge magnetoplasmon (EMP) transport in quantum Hall (QH) devices. We develop a model that allows us to calculate the transport coefficients of EMPs in QH devices with various geometries. In our model, a QH system is described as a chiral distributed-element (CDE) circuit, where the effects of Coulomb interaction are represented by an electrochemical capacitance distributed along unidirectional transmission lines. We measure the EMP transport coefficients through single- and coupled-edge channels, a quantum point contact, and single- and double-cavity structures. These measured transmission spectra can be reproduced well by simulations using the corresponding CDE circuits. By fitting the experimental results with the simulations, we deduce the circuit parameters that characterize the electrostatic environment around the edge channels in a realistic QH system. The observed gate-voltage dependences of the EMP transport properties in gate-defined structures are explained in terms of the gate tuning of the circuit parameters in CDE circuits.

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arXiv2010

Gate-dependent spin-orbit coupling in multi-electron carbon nanotubes

Understanding how the orbital motion of electrons is coupled to the spin degree of freedom in nanoscale systems is central for applications in spin-based electronics and quantum computation. We demonstrate this coupling of spin and orbit in a carbon nanotube quantum dot in the general multi-electron regime in presence of finite disorder. Further, we find a strong systematic dependence of the spin-orbit coupling on the electron occupation of the quantum dot. This dependence, which even includes a sign change is not demonstrated in any other system and follows from the curvature-induced spin-orbit split Dirac-spectrum of the underlying graphene lattice. Our findings unambiguously show that the spin-orbit coupling is a general property of nanotube quantum dots which provide a unique platform for the study of spin-orbit effects and their applications.

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arXiv2010

Voltage-controlled Group Velocity of Edge Magnetoplasmon in the Quantum Hall Regime

We investigate the group velocity of edge magnetoplasmons (EMPs) in the quantum Hall regime by means of time-of-flight measurement. The EMPs are injected from an Ohmic contact by applying a voltage pulse, and detected at a quantum point contact by applying another voltage pulse to its gate. We find that the group velocity of the EMPs traveling along the edge channel defined by a metallic gate electrode strongly depends on the voltage applied to the gate. The observed variation of the velocity can be understood to reflect the degree of screening caused by the metallic gate, which damps the in-plane electric field and hence reduces the velocity. The degree of screening can be controlled by changing the distance between the gate and the edge channel with the gate voltage.

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arXiv2009

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics

We propose and demonstrate wide-band capacitance measurements on a semiconductor double-quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector, we perform on-chip lock-in detection of the capacitance associated with the single-electron motion over a wide frequency range from hertz to a few ten gigahertz. Analyzing the phase and the frequency dependence of the signal allows us to extract the characteristic tunneling rates. We show that, by applying this technique to the interdot tunnel coupling regime, quantum capacitance reflecting the strength of the quantum-mechanical coupling can be measured.

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arXiv2009

Correlated coherent oscillations in coupled semiconductor charge qubits

Designing coherent processes is essential for developing quantum information technologies. We study coherent dynamics of two spatially separated electrons in a coupled semiconductor double quantum dot (DQD), in which various two-qubit operations are demonstrated just by adjusting the gate voltages. Especially, second-order correlated coherent oscillations provide functional quantum processes for making quantum correlation of separated particles. The results encourage searching quantum entanglement in electronic devices.

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arXiv2008

GaAs Microcavity Exciton-Polaritons in a Trap

We present a simple method to create an in-plane lateral potential in a semiconductor microcavity using a metal thin-film. Two types of potential are produced: a circular aperture and a one-dimensional (1D) periodic grating pattern. The amplitude of the potential induced by a 24 nm-6 nm Au/Ti film is on the order of a few hundreds of ueV measured at 6 ~ 8 K. Since the metal layer makes the electromagnetic fields to be close to zero at the metal-semiconductor interface, the photon mode is confined more inside of the cavity. As a consequence, the effective cavity length is reduced under the metal film, and the corresponding cavity resonance is blue-shifted. Our experimental results are in a good agreement with theoretical estimates. In addition, by applying a DC electric voltage to the metal film, we are able to modify the quantum well exciton mode due to the quantum confined Stark effect, inducing a ~ 1 meV potential at ~ 20 kV/cm. Our method produces a controllable in-plane spatial trap potential for lower exciton-polaritons (LPs), which can be a building block towards 1D arrays and 2D lattices of LP condensates.

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arXiv2003

Coherent manipulation of electronic states in a double quantum dot

We investigate coherent time-evolution of charge states (pseudo-spin qubit) in a semiconductor double quantum dot. This fully-tunable qubit is manipulated with a high-speed voltage pulse that controls the energy and decoherence of the system. Coherent oscillations of the qubit are observed for several combinations of many-body ground and excited states of the quantum dots. Possible decoherence mechanisms in the present device are also discussed.

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arXiv2002

Allowed and forbidden transitions in artificial hydrogen and helium atoms

The strength of radiative transitions in atoms is governed by selection rules. Spectroscopic studies of allowed transitions in hydrogen and helium provided crucial evidence for the Bohr's model of an atom. Forbidden transitions, which are actually allowed by higher-order processes or other mechanisms, indicate how well the quantum numbers describe the system. We apply these tests to the quantum states in semiconductor quantum dots (QDs), which are regarded as artificial atoms. Electrons in a QD occupy quantized states in the same manner as electrons in real atoms. However, unlike real atoms, the confinement potential of the QD is anisotropic, and the electrons can easily couple with phonons of the material. Understanding the selection rules for such QDs is an important issue for the manipulation of quantum states. Here we investigate allowed and forbidden transitions for phonon emission in one- and two-electron QDs (artificial hydrogen and helium atoms) by electrical pump-and-probe experiments, and find that the total spin is an excellent quantum number in artificial atoms. This is attractive for potential applications to spin based information storage.

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arXiv2002

Non-equilibrium transport through a vertical quantum dot in the absence of spin-flip energy relaxation

We investigate non-equilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel non-equilibrium tunneling processes involving high-spin states which cannot be excited from the ground state because of spin-blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory. The absence of effective spin relaxation induces considerable fluctuation of the spin, charge, and total energy of the quantum dot. Although these features are revealed clearly by pulse excitation measurements, they are also observed in conventional dc current characteristics of quantum dots.

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arXiv2000

Transient current spectroscopy of a quantum dot in the Coulomb blockade regime

Transient current spectroscopy is proposed and demonstrated in order to investigate the energy relaxation inside a quantum dot in the Coulomb blockade regime. We employ a fast pulse signal to excite an AlGaAs/GaAs quantum dot to an excited state, and analyze the non-equilibrium transient current as a function of the pulse length. The amplitude and time-constant of the transient current are sensitive to the ground and excited spin states. We find that the spin relaxation time is longer than, at least, a few microsecond.

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arXiv2000

Inelastic tunneling in a double quantum dot coupled to a bosonic environment

Coupling a quantum system to a bosonic environment always give rise to inelastic processes, which reduce the coherency of the system. We measure energy dependent rates for inelastic tunneling processes in a fully controllable two-level system of a double quantum dot. The emission and absorption rates are well repro-duced by Einstein's coefficients, which relate to the spontaneous emission rate. The inelastic tunneling rate can be comparable to the elastic tunneling rate if the boson occupation number becomes large. In the specific semiconductor double dot, the energy dependence of the inelastic rate suggests that acoustic phonons are coupled to the double dot piezoelectrically.

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arXiv2000

Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

Radio-frequency (rf)- operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz) charge noise in an AlGaAs/GaAs quantum dot using a transmission-type rf-SET technique. The electron capture and emission kinetics on a trap in the vicinity of the quantum dot are dominated by a Poisson process. The maximum bandwidth for measuring single trapping events is about 1 MHz, which is the same as that required for observing single-electron tunneling oscillations in a measurable current (~0.1pA).

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