arXiv subjects

Toshiya Ideue

Publications and source records attributed to Toshiya Ideue.

12 recordsLinked to original sources

arXiv2026

Switchable Magnetoelectric Transport in Graphene via a Van der Waals Multiferroic

Electric and magnetic control of transport properties at atomic interfaces is central to the development of next generation electronics and spintronics. Van der Waals multiferroics materials that simultaneously host dielectric and magnetic orders down to the monolayer limit offer a promising platform for such interfacial control, yet the realization of electronic functionalities that exploit the unique attributes of van der Waals multiferroics has largely remained elusive. Here, we realize a van der Waals heterostructure comprising graphene and the multiferroic CuCrP2S6, enabling gate-switchable magnetoelectric transport in graphene, mediated by the multiferroic layer. The charge-neutrality resistance peak of graphene exhibits pronounced hysteresis arising from polarization flip in the multiferroic state. Application of an in-plane magnetic field shifts this peak in a polarization-dependent manner, revealing magnetic-field-induced polarization modulation a direct signature of the magnetoelectric effect. Furthermore, cooling the device under an applied electric field enables domain control of the multiferroic order, allowing reversible switching of the interfacial magnetoelectric transport. These results provide the first demonstration of interfacial magnetoelectric transport in a vdW heterostructure, and establish a pathway for engineering two-dimensional van der Waals interfaces for functional device applications.

cond-mat.mes-hall↗

arXiv2026

Strain Tuning of Orbital-Driven Giant Magnetoresistance in van der Waals ferrimagnet Mn$_3$Si$_2$Te$_6$

Strain engineering of magnetotransport offers a powerful strategy for uncovering emergent electronic and domain phenomena in quantum magnetic materials, while providing a promising pathway toward next-generation mechanically programmable spintronic technologies. Van der Waals magnets are particularly attractive in this context because their high crystallinity and mechanical flexibility allow exceptionally large, precisely controllable strain, enabling access to strain-induced functionalities unattainable in conventional solids. Here, we report systematic strain control of the van der Waals magnet Mn$_3$Si$_2$Te$_6$, which exhibits an unconventional colossal magnetoresistance whose microscopic origin remains under debate. We demonstrate in situ large-strain modulation of the electrical resistance in bulk crystals and show that the effect can be consistently explained by strain-tunable chiral orbital-current domains. Furthermore, measurements on exfoliated flake devices containing a single chiral domain reveal direct strain control of the electronic structure affected by orbital magnetic moment, establishing a unified microscopic mechanism for the unconventional colossal magnetoresistance. These results identify strain as an exceptionally effective control parameter for tailoring electronic and magnetic states in van der Waals magnets and provide a conceptual framework for realizing spin-straintronic functionalities based on orbital degrees of freedom.

cond-mat.mtrl-sci↗

arXiv2026

Piezomagnetic transport in van der Waals noncoplanar Antiferromagnets

The piezomagnetic effect-strain-induced linear modulation of magnetization, arises in magnets with broken time-reversal symmetry (BTRS), offering a pathway to bidirectional strain-based control of magnetism, which is an essential straintronic and spintronic functionality in solids. Metallic antiferromagnets with BTRS provide an ideal platform to study this effect through transport measurements, yet experimental demonstrations are limited. Van der Waals (vdW) nanomagnets, with their mechanical flexibility, are particularly promising for realizing large piezomagnetic responses and effective transport control. Here we demonstrate piezomagnetic control of electronic transport in nano-devices of the vdW antiferromagnets CoNb$_3$S$_6$ and CoTa$_3$S$_6$, archetypal vdW metals with BTRS that exhibit a spontaneous Hall effect. Applying uniaxial strain linearly modulates both the antiferromagnetic transition temperature and coercive field, consistent with strain-driven tuning of exchange coupling, key signatures of the piezomagnetic effect. Moreover, spontaneous Hall effect is controllable via strain, evidencing piezomagnetic tuning of Berry curvature and its associated geometric transport. These findings establish piezomagnetism as a powerful route to manipulate antiferromagnetic transport, opening avenues for straintronic and spintronic applications in vdW magnetic systems.

cond-mat.mes-hall↗

arXiv2025

Magnetic resonance and microwave resistance modulation in van der Waals colossal-magnetoresistance material

Colossal magnetoresistance (CMR) is a fascinating quantum phenomenon that continues to draw significant interest in condensed matter physics. Mn3Si2Te6 has emerged as a prototypical CMR material, notable for its puzzling magnetoresistance behavior and pronounced directional anisotropy. Despite extensive research, the mechanisms driving CMR in Mn3Si2Te6 remain elusive [1-4]. In this work, we explore the magnetic resonance of Mn3Si2Te6 and observe a reduced g-factor for magnetic fields applied along the crystalline c-axis compared to the ab-plane, indicating a substantial orbital magnetization contribution along the c-axis. Furthermore, we detect resistance modulation under resonance conditions, suggesting that CMR in Mn3Si2Te6 is sensitive to the out-of-the plane spin polarization. These findings shed new light on the role of orbital magnetic moment in Mn3Si2Te6, offering a deeper understanding of the interplay between spin, orbital and lattice degrees of freedom of electrons in this system.

cond-mat.mtrl-sci↗

arXiv2025

Multilayer Cryogenic Powder Filters with Low Parasitic Capacitance

We report the development of a cryogenic powder filter that simultaneously offers high attenuation of radio-frequency (RF) signals in the gigahertz (GHz) range and minimized parasitic capacitance to ground. Conventional powder filters, which consist of a signal line passing through a metal powder-filled housing, attenuate high-frequency signals via the skin effect. However, these designs often suffer from significant parasitic capacitance between the signal line and the grounded chassis, which can compromise the performance of sensitive measurement setups by limiting their frequency bandwidth. In this work, we demonstrate that a multilayer powder filter design effectively achieves both high RF attenuation and reduced parasitic capacitance. This solution suppresses sample heating due to the unintentional intrusion of RF signals through the wiring, without degrading the performance of the measurement setup.

cond-mat.mes-hall↗

arXiv2024

Superconducting diode effect under time reversal symmetry

In noncentrosymmetric superconductors, superconducting and normal conductions can interchange based on the current flow direction. This effect is termed a superconducting diode effect (SDE), which is a focal point of recent research. The broken inversion and time reversal symmetry is believed to be the requirements of SDE but their intrinsic role has remained elusive. Here, we report strain-controlled SDEs in a layered trigonal superconductor, PbTaSe2. The SDE was found exclusively in a strained device with its absence in an unstrained device, despite that it is allowed in unstrained trigonal structure. Moreover, the zero-field or magnetic field-even (magnetic field-odd) SDE is observed when the strain and current are along armchair (zigzag) direction The results unambiguously demonstrate the intrinsic SDE under time-reversal symmetry and the critical role of strain-induced electric polarization.

cond-mat.supr-con↗

arXiv2022

Continuous Electrical Manipulation of Magnetic Anisotropy and Spin Flopping in van der Waals Ferromagnetic Devices

Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or out-of-plane directions) have been demonstrated with novel magnetization switching mechanisms for extended device functionalities. Normally, the intrinsic magnetic anisotropy in ferromagnetic materials is unchanged within a fixed direction, and thus, it is difficult to realize multifunctionality devices. Therefore, continuous modulation of magnetic anisotropy in ferromagnetic materials is highly desired but remains challenging. Here, we demonstrate a gate-tunable magnetic anisotropy transition from out-of-plane to canted and finally to in-plane in layered Fe$_5$GeTe$_2$ by combining the measurements of the angle-dependent anomalous Hall effect and magneto-optical Kerr effect with quantitative Stoner-Wohlfarth analysis. The magnetic easy axis continuously rotates in a spin-flop pathway by gating or temperature modulation. Such observations offer a new avenue for exploring magnetization switching mechanisms and realizing new spintronic functionalities.

cond-mat.mtrl-sci↗

arXiv2022

Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS$_2$

Stacking order in van der Waals materials determines the coupling between atomic layers and is therefore key to the materials' properties. By exploring different stacking orders, many novel physical phenomena have been realized in artificial vdW stacks. Recently, 2D ferroelectricity has been observed in zero-degree aligned hBN and graphene-hBN heterostructures, holding promise in a range of electronic applications. In those artificial stacks, however, the single domain size is limited by the stacking-angle misalignment to about 0.1 to 1 $μ$m, which is incompatible with most optical or optoelectronic applications. Here we show MoS$_2$ in the rhombohedral phase can host a homogeneous spontaneous polarization throughout few-$μ$m-sized exfoliated flakes, as it is a natural crystal requiring no stacking and is, therefore free of misalignment. Utilizing this homogeneous polarization and its induced depolarization field (DEP), we build a graphene-MoS$_2$ based photovoltaic device with high efficiency. The few-layer MoS$_2$ is thinner than most oxide-based ferroelectric films, which allows us to maximize the DEP and study its impact at the atomically thin limit, while the highly uniform polarization achievable in the commensurate crystal enables a tangible path for up-scaling. The external quantum efficiency of our device is up to 16% at room temperature, over one order larger than the highest efficiency observed in bulk photovoltaic devices, owing to the reduced screening in graphene, the exciton-enhanced light-matter interaction, and the ultrafast interlayer relaxation in MoS$_2$. In view of the wide range of bandgap energy in other TMDs, our findings make rhombohedral TMDs a promising and versatile candidate for applications such as energy-efficient photo-detection with high speed and programmable polarity.

cond-mat.mes-hall↗

arXiv2022

Giant intrinsic rectification and nonlinear Hall effect under time-reversal symmetry in a trigonal superconductor

Nonreciprocal or nonlinear responses in symmetry-broken systems are powerful probes of emergent properties in quantum materials, including superconductors, magnets, and topological materials. Recently, vortex matter has been recognized as a key ingredient of giant nonlinear responses in superconductors with broken inversion symmetry. However, nonlinear effects have been probed as excess voltage only under broken time-reversal symmetry. In this study, we report intrinsic rectification and nonlinear anomalous Hall effect under time-reversal symmetry in the noncentrosymmetric trigonal superconductor PbTaSe2. The magnitude of anomalous nonlinear transport is two orders of magnitude larger than those in the normal state, and the directional dependence of nonlinear signals are fully consistent with crystal symmetry. The enhanced nonlinearity is semiquantitatively explained by the asymmetric Hall effect of vortex-antivortex string pairs in noncentrosymmetric systems. This study enriches the literature on nonlinear phenomena by revealing a novel aspect of quantum transport in noncentrosymmetric superconductors.

cond-mat.supr-con↗

arXiv2020

Antiferromagnet-semiconductor van der Waals heterostructures: interlayer interplay of exciton with magnetic ordering

Van der Waals (vdW) heterostructures have attracted great interest because of their rich material combinations.The discovery of two-dimensional magnets has provided a new platform for magnetic vdW heterointerfaces; however, research on magnetic vdW heterointerfaces has been limited to those with ferromagnetic surfaces. Here we report a magnetic vdW heterointerface using layered intralayer-antiferromagnetic MPSe3 (M=Mn, Fe) and monolayer transition metal dichalcogenides (TMDs). We found an anomalous upshift of the excitonic peak in monolayer TMDs below the antiferromagnetic transition temperature in the MPSe3, capturing a signature of the interlayer exciton-magnon coupling. This is a concept extended from single materials to heterointerfaces. Moreover, this coupling strongly depends on the in-plane magnetic structure and stacking direction, showing its sensitivity to their magnetic interfaces. Our finding offers an opportunity to investigate interactions between elementary excitations in different materials across interfaces and to search for new functions of magnetic vdW heterointerfaces.

cond-mat.mtrl-sci↗

arXiv2019

Pressure-induced topological phase transition in noncentrosymmetric elemental Tellurium

Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological view point. Here we report the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillations phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior can be well understood by the pressure-induced band deformation and resultant band crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.

cond-mat.mtrl-sci↗

arXiv2019

Quantum and classical ratchet motions of vortices in a 2D trigonal superconductor

Dynamical behavior of vortices plays central roles in the quantum phenomena of two-dimensional (2D) superconductors. Quantum metallic state, for example, showing an anomalous temperature-independent resistive state down to low-temperatures, has been a common subject in recently developed 2D crystalline superconductors, whose microscopic origin is still under debate. Here, we unveil a new aspect of the vortex dynamics in a noncentrosymmetric 2D crystalline superconductor of MoS$_{2}$ through the nonreciprocal transport measurement. The second harmonic resistance $R^{2w}$ at low temperature with high current indicates the classical vortex flow accompanying the ratchet motion. Furthermore, we found that $R^{2w}$ is substantially suppressed in the quantum metallic state with low current region, allowing identification of the quantum and classical ratchet motions of vortices by the magnitude of the second harmonic generation. This suggests that nonreciprocal transport measurement can be a powerful tool to probe the vortex dynamics in noncentrosymmetric 2D superconductors.

cond-mat.supr-con↗