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Tracy C. Lovejoy

Publications and source records attributed to Tracy C. Lovejoy.

4 recordsLinked to original sources

Platform and Framework for Time-Resolved Nanoscale Thermal Transport Measurements in STEM

Understanding heat transport at the nanometer scale is critical for semiconductor devices, quantum materials, and thermal management of nanostructures, yet direct local measurements of thermal conductivity and heat capacity remain scarce. We developed a laser-excitation system integrated into a scanning transmission electron microscope (STEM) for nanoscale thermal transport measurements using ultra-high-resolution electron energy-loss spectroscopy (EELS). A fiber-coupled laser is introduced via a modified aperture mechanism, enabling flexible holder geometries and large tilt angles without optical elements in the polepiece gap. Synchronization of pulsed laser excitation with an externally gated direct electron detector provides temporal resolution about 50 ns at <10 meV energy resolution. Local temperatures are determined via the principle of detailed balance, and thermal transport parameters are extracted by fitting a forward-time central-space heat diffusion model including radiative losses. For amorphous carbon films, we obtain a thermal conductivity of 1.24 $\frac{W}{m\cdot K}$ and a heat capacity of 821 $\frac{J}{kg\cdot K}$, consistent with literature. This framework enables time-resolved nanoscale measurements of thermal transport in materials and devices.

cond-mat.mtrl-sci

High-temperature phonons in h-BN: momentum-resolved vibrational spectroscopy and theory

Vibrations in materials and nanostructures at sufficiently high temperatures result in anharmonic atomic displacements, which leads to new phenomena such as thermal expansion and multiphonon scattering processes, with a profound impact on temperature-dependent material properties including thermal conductivity, phonon lifetimes, nonradiative electronic transitions, and phase transitions. Nanoscale momentum-resolved vibrational spectroscopy, which has recently become possible on monochromated scanning-transmission-electron microscopes, is a unique method to probe the underpinnings of these phenomena. Here we report momentum-resolved vibrational spectroscopy in hexagonal boron nitride at temperatures of 300, 800, and 1300 K across three Brillouin zones (BZs) that reveals temperature-dependent phonon energy shifts and demonstrates the presence of strong Umklapp processes. Density-functional-theory calculations of temperature-dependent phonon self-energies reproduce the observed energy shifts and identify the contributing mechanisms.

cond-mat.mtrl-sci

Point defect states emergence in a plasmonic crystal

Plasmonic crystals are well known to have band structure including a bandgap, enabling the control of surface plasmon propagation and confinement. The band dispersion relation of bulk crystals has been generally measured by momentum-resolved spectroscopy using far field optical techniques while the defects introduced in the crystals have separately been investigated by near field imaging techniques so far. Particularly, defect related energy levels introduced in the plasmonic band gap have not been observed experimentally. In order to investigate such a localized mode, we performed electron energy-loss spectroscopy (EELS), on a point defect introduced in a plasmonic crystal made up of flat cylinders protruding out of a metal film and arranged on a triangular lattice. The energy level of the defect mode was observed to lie within the full band-gap energy range. This was confirmed by a momentum-resolved EELS measurement of the band gap performed on the same plasmonic crystal. Furthermore, we experimentally and theoretically investigated the emergence of the defect states by starting with a corral of flat cylinders protrusions and adding sequentially additional shells of those in order to eventually forming a plasmonic band-gap crystal encompassing a single point defect. It is demonstrated that a defect-like state already forms with a crystal made up of only two shells.

physics.optics

Silicon-carbon bond inversions driven by 60 keV electrons in graphene

We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of non-destructive and atomically precise structural modification and detection for two-dimensional materials.

cond-mat.mes-hall