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Trey Cole

Publications and source records attributed to Trey Cole.

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Exact expression for the Berry connection in the projection gauge

The Berry connection encodes the momentum-space geometry of occupied Bloch states in gapped insulators and plays a central role in topological materials. While gauge-invariant quantities can be evaluated from overlap matrices between neighboring $k$ points, accessing the Berry connection itself as a smooth field requires specifying a continuous gauge over the Brillouin zone. Wannier-based workflows achieve this through projection onto localized orbitals, enabling stable evaluation of geometric quantities and response functions. In this setting, the Berry connection enters directly in Wannier-interpolated calculations of polarization, Berry curvature, and related response functions. In practical implementations, however, the projection-gauge Berry connection is typically constructed from finite-difference overlaps between neighboring $k$ points, discretizing momentum derivatives and introducing errors tied to $k$-mesh spacing and gauge alignment. These effects can become numerically delicate in systems with small band gaps or when evaluating higher-order responses such as the Chern-Simons axion angle. Here, we derive an exact expression for the non-Abelian Berry connection in the projection gauge that is local in crystal momentum. Starting from projected and orthonormalized Bloch-like states, we obtain a closed-form equation expressed entirely in terms of $k$-local quantities. We validate the formulation in one and three dimensions by computing the Berry phase and Chern-Simons axion angle in tight-binding models. The resulting framework provides a stable route to evaluating geometric properties within Wannier interpolation schemes and future first-principles implementations.

cond-mat.mes-hall

Reduced Wannier representation for topological bands

Bands with non-trivial topological indices have a topological obstruction preventing them from being represented by exponentially localized Wannier states. Here, we propose a procedure to construct exponentially localized Wannier functions that span a subspace of topologically obstructed bands through the use of the projection method. These Wannier functions form what we refer to as a "reduced Wannier representation," indicating that the Wannier functions necessarily do not span the full topological manifold. By constructing supercells, we obtain reduced Wannier functions that break the primitive translational symmetry while capturing a substantial portion of the topologically obstructed manifold. This approach effectively decomposes the topological manifold into two subspaces: an itinerant subspace inheriting the topology and a localized trivial subspace represented by reduced Wannier functions. We consider the Haldane and Kane-Mele tight-binding models as the platforms for our investigation.

cond-mat.mes-hall

Enhanced topological superconductivity in spatially modulated planar Josephson junctions

We propose a semiconductor-superconductor hybrid device for realizing topological superconductivity and Majorana zero modes consisting of a planar Josephson junction structure with periodically modulated junction width. By performing a numerical analysis of the effective model describing the low-energy physics of the hybrid structure, we demonstrate that the modulation of the junction width results in a substantial enhancement of the topological gap and, consequently, of the robustness of the topological superconducting phase and associated Majorana zero modes. This enhancement is due to the formation of minibands with strongly renormalized effective parameters, including stronger spin-orbit coupling, generated by the effective periodic potential induced by the modulated structure. In addition to a larger topological gap, the proposed device supports a topological superconducting phase that covers a significant fraction of the parameter space, including the low Zeeman field regime, in the absence of a superconducting phase difference across the junction. Furthermore, the optimal regime for operating the device can be conveniently accessed by tuning the potential in the junction region using, for example, a top gate.

cond-mat.mes-hall