arXiv subjects

Tristan Meunier

Publications and source records attributed to Tristan Meunier.

At least 19 recordsLinked to original sources

arXiv2026

Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform

We report progress toward the development of a quantum silicon-on-insulator (QSOI(R)) technology compatible with 300mm CMOS fabrication and adapted from the 28nm Fully-Depleted SOI (28nm FD-SOI) platform for scalable quantum computing. We compare quantum devices fabricated with standard 28nm FD-SOI and QSOI(R) technologies, and show striking improvements of room temperature electrostatic properties of the individual device. Moreover, the QSOI(R) technology has significantly reduced the device variability and the dispersion of device properties at the wafer level. Transistor metrics are reproduced by TCAD simulations showing that the electrostatics of the devices behave as expected for QSOI(R) technology. Wafer-scale measurements at sub-2K show reproducible quantum dots down to the few-electron regime with 69\% yield for successful charge detection of the first electron and a dispersion of the first electron position of $\mathrm{\pm 35 mV}$ over 377 quantum dots. These results establish QSOI(R) as a promising platform for CMOS-compatible quantum device co-integration.

cond-mat.mes-hall↗

arXiv2026

Multiplexed cryo-CMOS control of an isolated double quantum dot

Scalable spin-based quantum computing demands precise and stable control of a large number of gate-defined quantum dots while minimizing wiring complexity and thermal load. Control architectures based on sample-and-hold (SH) multiplexing techniques offer a promising solution by enabling sequential programming of several gate voltages using a limited number of input lines. However, the compatibility of such dynamic voltage refreshing with the stringent stability, noise, and speed requirements of quantum dot operation is an active subject of study. Here we experimentally demonstrate that a multiplexing cryo-CMOS circuit can reliably bias a silicon double quantum dot (DQD) at 0.5K. Exploiting the isolated regime, we show deterministic loading and isolation of four electrons and stable access to all five charge configurations from (4,0) to (0,4), despite the sequential voltage refreshing. We further demonstrate rapid voltage pulsing across an inter-dot transition, resolving single-electron tunneling events and stochastic switching at the (1,3)-(0,4) transition. These results confirm that SH-based multiplexed control is compatible with both static biasing and pulsing of isolated quantum dots, representing an important milestone toward scalable cryogenic control architectures for large-scale spin-qubit processors.

cond-mat.mes-hall↗

arXiv2026

The SpinPulse library for transpilation and noise-accurate simulation of spin qubit quantum computers

We introduce SpinPulse, an open-source python package for simulating spin qubit-based quantum computers at the pulse-level. SpinPulse models the specific physics of spin qubits, particularly through the inclusion of classical non-Markovian noise. This enables realistic simulations of native gates and quantum circuits, in order to support hardware development. In SpinPulse, a quantum circuit is first transpiled into the native gate set of our model and then converted to a pulse sequence. This pulse sequence is subsequently integrated numerically in the presence of a simulated noisy experimental environment. We showcase workflows including transpilation, pulse-level compilation, hardware benchmarking, quantum error mitigation, and large-scale simulations via integration with the tensor-network library quimb. We expect SpinPulse to be a valuable open-source tool for the quantum computing community, fostering efforts to devise high-fidelity quantum circuits and improved strategies for quantum error mitigation and correction.

quant-ph↗

arXiv2025

Electron qubits surfing on acoustic waves: review of recent progress

The displacement of a single electron enables exciting avenues for nanotechnology with vast application potential in quantum metrology, quantum communication and quantum computation. Surface acoustic waves (SAW) have proven itself as a surprisingly useful solution to perform this task over large distance with outstanding precision and reliability. Over the last decade, important milestones have been achieved bringing SAW-driven single-electron transport from first proof-of-principle demonstrations to accurate, highly-controlled implementations, such as coherent spin transport, charge-to-photon conversion, or antibunching of charge states. Beyond the well-established piezoelectric gallium-arsenide platform, first realisations of acousto-electronic transport have also been carried out on the surface of liquid helium that promises unique stability and coherence. In this review article, we aim to keep track of this remarkable progress in SAW-driven transport of electron qubits by explaining these recent achievements from basic principles, with an outlook on follow-up experiments and near-term applications.

cond-mat.mes-hall↗

arXiv2025

Simulated non-Markovian Noise Resilience of Silicon-Based Spin Qubits with Surface Code Error Correction

We investigate the resilience of silicon-based spin qubits against non-Markovian noise within the framework of quantum error correction. We consider a realistic non-Markovian noise model that affects both the Larmor frequency and exchange energy of qubits, allowing accurate simulations of noisy quantum circuits. We employ numerical emulation to assess the performance of the distance-3 rotated surface code and its XZZX variant, using a logical qubit coherence time metric based on Ramsey-like experiments. Our numerical results suggest that quantum error correction converts non-Markovian physical noise into Markovian logical noise, resulting in a quartic dependence of coherence time between physical and logical qubits. Additionally, we analyze the effects of spatial noise correlations and sparse architectures, substantiating the robustness of quantum error correction in silicon-based spin qubit systems.

quant-ph↗

arXiv2025

A foundry-fabricated spin qubit unit cell with in-situ dispersive readout

Spin qubits based on semiconductor quantum dots are a promising prospect for quantum computation because of their high coherence times and gate fidelities. However, scaling up those structures to the numbers required by fault-tolerant quantum computing is currently hampered by a number of issues. One of the main issues is the need for single-shot low-footprint qubit readout. Here, we demonstrate the single-shot in situ measurement of a compact qubit unit-cell. The unit cell is composed of two electron spins with a controllable exchange interaction. We report initialization, single-shot readout and two-electron entangling gate. The unit cell was successfully operated at up to 1 K, with state-of-the-art charge noise levels extracted using free induction decay. With its integrated readout and high stability, this foundry fabricated qubit unit cell demonstrates strong potential for scalable quantum computing architectures.

cond-mat.mes-hall↗

arXiv2025

Transport characterization and quantum dot coupling in commercial 22FDX

Different groups worldwide have been working with the GlobalFoundries 22nm platform (22FDX) with the hopes of industrializing the fabrication of Si spin qubits. To guide this effort, we have performed a systematic study of six of the foundry's processes of reference (POR). Using effective mobility as a figure of merit, we study the impact of gate stack, channel type and back bias as a function of temperature. This screening process selected qubit devices that allowed us to couple quantum dots along both the length and width of the Si channel. We present stability diagrams with clear and regular honeycomb patterns, where spurious elements such as dopants are not observed. By combining these results with room and low temperature simulations, we provide insights into potential technology optimizations and show both the utility of qubit pre-screening protocols as well as the advantages of leveraging forward body bias within an FDSOI (Fully Depleted Silicon-On-Insulator) qubit platform.

cond-mat.mes-hall↗

arXiv2024

Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology

This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2μs, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves the way towards resonator-free large-scale quantum-classical architectures that would be required for future universal and reprogrammable quantum computers.

cond-mat.mes-hall↗

arXiv2024

Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays

Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore, to scale-up a spin-based architecture we must change how individual charges are readout and controlled. Here, we demonstrate single-spin occupancy of each dot in a foundry-fabricated array by combining two methods. 1/ Loading a finite number of electrons into the quantum dot array; simplifying electrostatic tuning by isolating the array from the reservoirs. 2/ Deploying multiplex gate-based reflectometry to dispersively probe charge tunneling and spin states without charge sensors or reservoirs. Our isolated arrays probed by embedded multiplex readout can be readily electrostatically tuned. They are thus a viable, scalable approach for spin-based quantum architectures.

cond-mat.mes-hall↗

arXiv2023

Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for additional elements. In this effort towards scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in SiMOS multi-gate devices, with SNR enhanced thanks to a Josephson traveling-wave parametric amplifier (JTWPA). The broad, tunable 2GHz amplification bandwidth combined with more than 10dB ON/OFF SNR improvement of the JTWPA enables frequency and time division multiplexed readout of interdot transitions, and noise performance near the quantum limit. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performances up to a magnetic field of 1.2T at the quantum dot device, compatible with standard SiMOS spin qubit experiments.

cond-mat.mes-hall↗

arXiv2023

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.

cond-mat.mes-hall↗

arXiv2023

Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control

Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling, with an electric gate, the relative proportions of the opposite contributions of opposite surfaces. At magnetic fields of 1 T, the magnetoresistance is of the order of 1 \% and has a larger figure of merit than previously measured TIs. We propose a theoretical model giving a quantitative account of our experimental data. This phenomenon, unique to TI, offers novel opportunities to tune their electrical response for spintronics.

cond-mat.mes-hall↗

arXiv2022

In-flight detection of few electrons using a singlet-triplet spin qubit

We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubit is an ultrasensitive and fast charge detector with the perspective of a future single shot-detection of a single flying electron. This work opens the route toward quantum electron optics experiments at the single electron level in semiconductor circuits.

cond-mat.mes-hall↗

arXiv2022

Superconducting routing platform for large-scale integration of quantum technologies

To reach large-scale quantum computing, three-dimensional integration of scalable qubit arrays and their control electronics in multi-chip assemblies is promising. Within these assemblies, the use of superconducting interconnections, as routing layers, offers interesting perspective in terms of (1) thermal management to protect the qubits from control electronics self-heating, (2) passive device performance with significant increase of quality factors and (3) density rise of low and high frequency signals thanks to minimal dispersion. We report on the fabrication, using 200 mm silicon wafer technologies, of a multi-layer routing platform designed for the hybridization of spin qubit and control electronics chips. A routing level couples the qubits and the control circuits through one layer of Al0.995Cu0.005 and superconducting layers of TiN, Nb or NbN, connected between them by W-based vias. Wafer-level parametric tests at 300 K validate the yield of these technologies and low temperature electrical measurements in cryostat are used to extract the superconducting properties of the routing layers. Preliminary low temperature radio-frequency characterizations of superconducting passive elements, embedded in these routing levels, are presented.

cond-mat.mes-hall↗

arXiv2022

Coulomb-mediated antibunching of an electron pair surfing on sound

Electron flying qubits are envisioned as potential information link within a quantum computer, but also promise -- alike photonic approaches -- a self-standing quantum processing unit. In contrast to its photonic counterpart, electron-quantum-optics implementations are subject to Coulomb interaction, which provide a direct route to entangle the orbital or spin degree of freedom. However, the controlled interaction of flying electrons at the single particle level has not yet been established experimentally. Here we report antibunching of a pair of single electrons that is synchronously shuttled through a circuit of coupled quantum rails by means of a surface acoustic wave. The in-flight partitioning process exhibits a reciprocal gating effect which allows us to ascribe the observed repulsion predominantly to Coulomb interaction. Our single-shot experiment marks an important milestone on the route to realise a controlled-phase gate for in-flight quantum manipulations.

cond-mat.mes-hall↗

arXiv2022

Probing charge noise in few electron CMOS quantum dots

Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension. Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime. We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot.

cond-mat.mes-hall↗

arXiv2022

Complete readout of two-electron spin states in a double quantum dot

We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, Tzero, Tplus or Tminus state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin qubit platforms.

cond-mat.mes-hall↗

arXiv2022

Generation of a single-cycle acoustic pulse: a scalable solution for transport in single-electron circuits

The synthesis of single-cycle, compressed optical and microwave pulses sparked novel areas of fundamental research. In the field of acoustics, however, such a generation has not been introduced yet. For numerous applications, the large spatial extent of surface acoustic waves (SAW) causes unwanted perturbations and limits the accuracy of physical manipulations. Particularly, this restriction applies to SAW-driven quantum experiments with single flying electrons, where extra modulation renders the exact position of the transported electron ambiguous and leads to undesired spin mixing. Here, we address this challenge by demonstrating single-shot chirp synthesis of a strongly compressed acoustic pulse. Employing this solitary SAW pulse to transport a single electron between distant quantum dots with an efficiency exceeding 99%, we show that chirp synthesis is competitive with regular transduction approaches. Performing a time-resolved investigation of the SAW-driven sending process, we outline the potential of the chirped SAW pulse to synchronize single-electron transport from many quantum-dot sources. By superimposing multiple pulses, we further point out the capability of chirp synthesis to generate arbitrary acoustic waveforms tailorable to a variety of (opto)nanomechanical applications. Our results shift the paradigm of compressed pulses to the field of acoustic phonons and pave the way for a SAW-driven platform of single-electron transport that is precise, synchronized, and scalable.

cond-mat.mes-hall↗