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Trond I. Andersen

Publications and source records attributed to Trond I. Andersen.

28 records · Page 2Linked to original sources

Suppressing quantum errors by scaling a surface code logical qubit

Practical quantum computing will require error rates that are well below what is achievable with physical qubits. Quantum error correction offers a path to algorithmically-relevant error rates by encoding logical qubits within many physical qubits, where increasing the number of physical qubits enhances protection against physical errors. However, introducing more qubits also increases the number of error sources, so the density of errors must be sufficiently low in order for logical performance to improve with increasing code size. Here, we report the measurement of logical qubit performance scaling across multiple code sizes, and demonstrate that our system of superconducting qubits has sufficient performance to overcome the additional errors from increasing qubit number. We find our distance-5 surface code logical qubit modestly outperforms an ensemble of distance-3 logical qubits on average, both in terms of logical error probability over 25 cycles and logical error per cycle ($2.914\%\pm 0.016\%$ compared to $3.028\%\pm 0.023\%$). To investigate damaging, low-probability error sources, we run a distance-25 repetition code and observe a $1.7\times10^{-6}$ logical error per round floor set by a single high-energy event ($1.6\times10^{-7}$ when excluding this event). We are able to accurately model our experiment, and from this model we can extract error budgets that highlight the biggest challenges for future systems. These results mark the first experimental demonstration where quantum error correction begins to improve performance with increasing qubit number, illuminating the path to reaching the logical error rates required for computation.

quant-ph↗

Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe$_2$/MoSe$_2$ bilayers

Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trapping, host Mott insulating and superconducting states, and act as unique Hubbard systems whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures also feature atomic reconstruction and domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) of typical moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties of these heterostructures could not be investigated systematically and have often been ignored. Here, we use near-0$^o$ twist angle MoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directly probe excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane (z) electric dipole moments in opposite directions. The dipole orientation of ground-state $Γ$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields, while higher-energy K-K interlayer excitons (X$_{I,2}$) undergo field-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our study reveals the profound impacts of crystal symmetry on TMD excitons and points to new avenues for realizing topologically nontrivial systems, exotic metasurfaces, collective excitonic phases, and quantum emitter arrays via domain-pattern engineering.

cond-mat.mes-hall↗

Electrically tunable valley dynamics in twisted WSe$_2$/WSe$_2$ bilayers

The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe$_2$/WSe$_2$ bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than three orders of magnitude via electrostatic doping, enabling switching of the DOCP from ~80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.

cond-mat.mes-hall↗

High resolution imaging of reconstructed domains and moire patterns in functional van der Waals heterostructure devices

The optical and electronic properties of van der Waals (vdW) heterostructures depend strongly on the atomic stacking order of the constituent layers. This is exemplified by periodic variation of the local atomic registry, known as moire patterns, giving rise to superconductivity and ferromagnetism in twisted bilayer graphene and novel exciton states in transition metal dichalcogenides (TMD) heterobilayers. However, the presence of the nanometer-scale moire superlattices is typically deduced indirectly, because conventional imaging techniques, such as transmission electron microscopy (TEM), require special sample preparation that is incompatible with most optical and transport measurements. Here, we demonstrate a method that uses a secondary electron microscope to directly image the local stacking order in fully hexagonal boron nitride (hBN) encapsulated, gated vdW heterostructure devices on standard Si-substrates. Using this method, we demonstrate imaging of reconstructed moire patterns in stacked TMDs, ABC/ABA stacking order in graphene multilayers, and AB/BA boundaries in bilayer graphene. Furthermore, we show that the technique is non-destructive, thus unlocking the possibility of directly correlating local stacking order with optical and electronic properties, crucial to the development of vdW heterostructure devices with precisely controlled functionality.

cond-mat.mes-hall↗

Moiré Excitons Correlated with Superlattice Structure in Twisted WSe$_2$/WSe$_2$ Homobilayers

Moiré superlattices in twisted van der Waals materials constitute a promising platform for engineering electronic and optical properties. However, a major obstacle to fully understanding these systems and harnessing their potential is the limited ability to correlate the local moiré structure with optical properties. By using a recently developed scanning electron microscopy technique to image twisted WSe$_2$/WSe$_2$ bilayers, we directly correlate increasing moiré periodicity with the emergence of two distinct exciton species. These can be tuned individually through electrostatic gating, and feature different valley coherence properties. Our observations can be understood as resulting from an array of two intralayer exciton species residing in alternating locations in the superlattice, and illuminate the influence of the moiré potential on lateral exciton motion. They open up new avenues for controlling exciton arrays in twisted TMDs, with applications in quantum optoelectronics and explorations of novel many body systems.

cond-mat.mes-hall↗

Enhanced photoenergy harvesting and extreme Thomson effect in hydrodynamic electronic systems

The thermoelectric (TE) properties of a material are dramatically altered when electron-electron interactions become the dominant scattering mechanism. In the degenerate hydrodynamic regime, the thermal conductivity is reduced and becomes a {\it decreasing} function of the electronic temperature, due to a violation of the Wiedemann-Franz (WF) law. We here show how this peculiar temperature dependence gives rise to new striking TE phenomena. These include an 80-fold increase in TE efficiency compared to the WF regime, dramatic qualitative changes in the steady state temperature profile, and an anomalously large Thomson effect. In graphene, which we pay special attention to here, these effects are further amplified due to a doubling of the thermopower.

cond-mat.mes-hall↗

Relative efficiency of polariton emission in two-dimensional materials

We investigated emission and propagation of polaritons in a two dimensional van der Waals material hexagonal boron nitride (hBN). Our specific emphasis in this work is on hyperbolic phonon polariton emission that we investigated by means of scattering-type scanning near-field optical microscopy. Real-space nano-images detail how the polaritons are launched in several common arrangements including: light scattering by the edges of the crystal, metallic nanostructures deposited on the surface of hBN crystals, as well as random defects and impurities. Notably, the scanned tip of the near-field microscope is itself an efficient polariton launcher. Our analysis reveals that the scanning tips are superior to other types of emitters we have investigated. Furthermore, the study of polariton emission and emission efficiency may provide insights for development of polaritonic devices and for fundamental studies of collective modes in other van der Waals materials.

cond-mat.mes-hall↗

Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure

Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid electron-electron scattering to redistribute excess energy and reach electronic thermal equilibrium. Due to extremely short time and length scales, the measurement and manipulation of electron thermalization in nanoscale devices remains challenging even with the most advanced ultrafast laser techniques. Here, we overcome this challenge by leveraging the atomic thinness of two-dimensional van der Waals (vdW) materials in order to introduce a highly tunable electron transfer pathway that directly competes with electron thermalization. We realize this scheme in a graphene-boron nitride-graphene (G-BN-G) vdW heterostructure, through which optically excited carriers are transported from one graphene layer to the other. By applying an interlayer bias voltage or varying the excitation photon energy, interlayer carrier transport can be controlled to occur faster or slower than the intralayer scattering events, thus effectively tuning the electron thermalization pathways in graphene. Our findings, which demonstrate a novel means to probe and directly modulate electron energy transport in nanoscale materials, represent an important step toward designing and implementing novel optoelectronic and energy-harvesting devices with tailored microscopic properties.

cond-mat.mes-hall↗

Observation of interlayer phonon modes in van der Waals heterostructures

We have investigated the vibrational properties of van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs), specifically MoS2/WSe2 and MoSe2/MoS2 heterobilayers as well as twisted MoS2 bilayers, by means of ultralow-frequency Raman spectroscopy. We discovered Raman features (at 30 ~ 40 cm-1) that arise from the layer-breathing mode (LBM) vibrations between the two incommensurate TMD monolayers in these structures. The LBM Raman intensity correlates strongly with the suppression of photoluminescence that arises from interlayer charge transfer. The LBM is generated only in bilayer areas with direct layer-layer contact and atomically clean interface. Its frequency also evolves systematically with the relative orientation between of the two layers. Our research demonstrates that LBM can serve as a sensitive probe to the interface environment and interlayer interactions in van der Waals materials.

cond-mat.mes-hall↗

Competing Channels for Hot Electron Cooling in Graphene

We report on temperature dependent photocurrent measurements of high-quality dual-gated monolayer graphene (MLG) p-n junction devices. A photothermoelectric (PTE) effect governs the photocurrent response in our devices, allowing us to track the hot electron temperature and probe hot electron cooling channels over a wide temperature range (4 K to 300 K). At high temperatures ($T > T^*$), we found that both the peak photocurrent and the hot spot size decreased with temperature, while at low temperatures ($T < T^*$), we found the opposite, namely that the peak photocurrent and the hot spot size increased with temperature. This non-monotonic temperature dependence can be understood as resulting from the competition between two hot electron cooling pathways: (a) (intrinsic) momentum-conserving normal collisions (NC) that dominates at low temperatures and (b) (extrinsic) disorder-assisted supercollisions (SC) that dominates at high temperatures. Gate control in our high quality samples allows us to resolve the two processes in the same device for the first time. The peak temperature $T^*$ depends on carrier density and disorder concentration, thus allowing for an unprecedented way of controlling graphene's photoresponse.

cond-mat.mes-hall↗