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Tsung-Han Lee

Publications and source records attributed to Tsung-Han Lee.

29 records · Page 2Linked to original sources

Bypassing the computational bottleneck of quantum-embedding theories for strong electron correlations with machine learning

A cardinal obstacle to performing quantum-mechanical simulations of strongly-correlated matter is that, with the theoretical tools presently available, sufficiently-accurate computations are often too expensive to be ever feasible. Here we design a computational framework combining quantum-embedding (QE) methods with machine learning. This allows us to bypass altogether the most computationally-expensive components of QE algorithms, making their overall cost comparable to bare Density Functional Theory (DFT). We perform benchmark calculations of a series of actinide systems, where our method describes accurately the correlation effects, reducing by orders of magnitude the computational cost. We argue that, by producing a larger-scale set of training data, it will be possible to apply our method to systems with arbitrary stoichiometries and crystal structures, paving the way to virtually infinite applications in condensed matter physics, chemistry and materials science.

cond-mat.str-el↗

The two-dimensional disordered Mott metal-insulator transition

We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through the Statistical Dynamical Mean-Field Theory (statDMFT). This theory is a natural extension of the Dynamical Mean-Field Theory (DMFT), which has been used with relative success in the last several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, the statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using Quantum Monte Carlo to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator cease to be meta-stable. We also studied spatial fluctuations of local quantities, such as the self-energy and the local Green's function, and showed the appearance of metallic regions within the insulator and vice-versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma, the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a mapping to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.

cond-mat.str-el↗

Rotationally invariant slave-boson and density matrix embedding theory: A unified framework and a comparative study on the 1D and 2D Hubbard Model

We present detailed benchmark ground-state calculations of the one- and two-dimensional Hubbard model utilizing the cluster extensions of the rotationally invariant slave-boson (RISB) mean-field theory and the density matrix embedding theory (DMET). Our analysis shows that the overall accuracy and the performance of these two methods are very similar. Furthermore, we propose a unified computational framework that allows us to implement both of these techniques on the same footing. This provides us with a new line of interpretation and paves the ways for developing systematically new generalizations of these complementary approaches.

cond-mat.str-el↗

Pairing Mechanism in Hunds Metal Superconductors and the Universality of the Superconducting Gap to Critical Temperature Ratio

We analyze a simple model containing the physical ingredients of a Hund's metal, the local spin fluctuations with power-law correlators, $(Ω_0/|Ω|)^γ$, with $γ$ greater than one, interacting with electronic quasiparticles. While the critical temperature and the gap change significantly with varying parameters, the $2Δ_{max}/k_BT_c$ remains close to twice the BCS value in agreement with experimental observations in the iron-based superconductors (FeSC).

cond-mat.supr-con↗

Uncovering the Origin of Divergence in the CsM(CrO$_4$)$_2$ (M = La, Pr, Nd, Sm, Eu; Am) Family through Examination of the Chemical Bonding in a Molecular Cluster and by Band Structure Analysis

A series of f-block chromates, CsM(CrO$_4$)$_2$ (M = La, Pr, Nd, Sm, Eu; Am), were prepared revealing notable differences between the AmIII derivatives and their lanthanide analogs. While all compounds form similar layered structures, the americium compound exhibits polymorphism and adopts both a structure isomorphous with the early lanthanides as well as one that possesses lower symmetry. Both polymorphs are dark red and possess band gaps that are smaller than the LnIII compounds. In order to probe the origin of these differences, the electronic structure of $α$-CsSm(CrO$_4$)$_2$, $α$-CsEu(CrO$_4$)$_2$ and $α$-CsAm(CrO$_4$)$_2$ were studied using both a molecular cluster approach featuring hybrid density functional theory and QTAIM analysis, and by the periodic LDA+GA and LDA+DMFT methods. Notably, the covalent contributions to bonding by the f orbitals was found to be more than twice as large in the AmIII chromate than in the SmIII and EuIII compounds, and even larger in magnitude than the Am-5f spin-orbit splitting in this system. Our analysis indicates also that the Am-O covalency in $α$-CsAm(CrO$_4$)$_2$ is driven by the degeneracy of the 5f and 2p orbitals, and not by orbital overlap.

cond-mat.str-el↗

Critical role of electronic correlations in determining crystal structure of transition metal compounds

The choice that a solid system "makes" when adopting a crystal structure (stable or metastable) is ultimately governed by the interactions between electrons forming chemical bonds. By analyzing 6 prototypical binary transition-metal compounds we demonstrate here that the orbitally-selective strong $d$-electron correlations influence dramatically the behavior of the energy as a function of the spatial arrangements of the atoms. Remarkably, we find that the main qualitative features of this complex behavior can be traced back to simple electrostatics, i.e., to the fact that the strong $d$-electron correlations influence substantially the charge transfer mechanism, which, in turn, controls the electrostatic interactions. This result advances our understanding of the influence of strong correlations on the crystal structure, opens a new avenue for extending structure prediction methodologies to strongly correlated materials, and paves the way for predicting and studying metastability and polymorphism in these systems.

cond-mat.str-el↗

Dynamical Mean Field Theory, Density-Matrix Embedding Theory and Rotationally Invariant Slave Bosons: a Unified Perspective

We present a unified perspective on Dynamical Mean Field Theory (DMFT), Density-Matrix Embedding Theory (DMET) and Rotationally Invariant Slave Bosons (RISB). We show that DMET can be regarded as a simplification of the RISB method where the quasiparticle weight is set to unity. This relation allows to easily transpose extensions of a given method to another: for instance, a temperature-dependent version of RISB can be used to derive a temperature-dependent free-energy formula for DMET.

cond-mat.str-el↗

Emergent Bloch Excitations in Mott Matter

We develop a unified theoretical picture for excitations in Mott systems, portraying both the heavy quasiparticle excitations and the Hubbard bands as features of an emergent Fermi liquid state formed in an extended Hilbert space, which is non-perturbatively connected to the physical system. This observation sheds light on the fact that even the incoherent excitations in strongly correlated matter often display a well defined Bloch character, with pronounced momentum dispersion. Furthermore, it indicates that the Mott point can be viewed as a topological transition, where the number of distinct dispersing bands displays a sudden change at the critical point. Our results, obtained from an appropriate variational principle, display also remarkable quantitative accuracy. This opens an exciting avenue for fast realistic modeling of strongly correlated materials.

cond-mat.str-el↗

Fate of spinons at the Mott point

Gapless spin liquids have recently been observed in several frustrated Mott insulators, with elementary spin excitations - "spinons" - reminiscent of degenerate Fermi systems. However, their precise role at the Mott point, where charge fluctuations begin to proliferate, remains controversial and ill-understood. Here we present the simplest theoretical framework that treats the dynamics of emergent spin and charge excitations on the same footing, providing a new physical picture of the Mott metal-insulator transition at half filing. We identify a generic orthogonality mechanism leading to strong damping of spinons, arising as soon as the Mott gap closes. Our results indicates that spinons should not play a significant role within the high-temperature quantum critical regime above the Mott point - in striking agreement with all available experiments.

cond-mat.str-el↗

Gate-tuned two-channel Kondo screening by graphene leads: Universal scaling of the nonlinear conductance

Based on the non-crossing approximation, we calculate both the linear and nonlinear conductance within the two-lead two-channel single-impurity Anderson model where the conduction electron density of states vanishes in a power-law fashion $ \propto |ω-μ_F|^r$ with $r=1$ near the Fermi energy, appropriate for an hexagonal system. For given gate voltage, we address the universal crossover from a two-channel Kondo phase, argued to occur in doped graphene, to an unscreened local moment phase. We extract universal scaling functions in conductance governing charge transfer through the two-channel pseudogap Kondo impurity and discuss our results in the context of a recent scanning tunneling spectroscopy experiment on Co-doped graphene.

cond-mat.str-el↗

Tunable Fano-Kondo resonance in side-coupled double quantum dot system

We study the interference between the Fano and Kondo effects in a side-coupled double-quantum- dot system where one of the quantum dots couples to conduction electron bath while the other dot only side-couples to the first dot via antiferromagnetic (AF) spin exchange coupling. We apply both the perturbative renormalization group (RG) and numerical renormalization group (NRG) approaches to study the effect of AF coupling on the Fano lineshape in the conduction leads. With particle-hole symmetry, the AF exchange coupling competes with the Kondo effect and leads to a local spin-singlet ground state for arbitrary small coupling, so called "two-stage Kondo effect". As a result, via NRG we find the spectral properties of the Fano lineshape in the tunneling density of states (TDOS) of conduction electron leads shows double dip-peak features at the energy scale around the Kondo temperature and the one much below it, corresponding to the two-stage Kondo effect; it also shows an universal scaling behavior at very low energies. We find the qualitative agreement between the NRG and the perturbative RG approach. Relevance of our work to the experiments is discussed.

cond-mat.mes-hall↗