arXiv subjects

Tuan Thien Tran

Publications and source records attributed to Tuan Thien Tran.

3 recordsLinked to original sources

arXiv2026

Quantitative Analysis of Composition and Contamination of Atomically Thin Materials by Recoil-Projectile Coincidence in Ion Transmission

Surface contamination strongly affects the intrinsic properties of nanoscale materials, making its reliable identification and quantification crucial for both accurate experimental interpretation and nanofabrication. Although scanning transmission electron microscopy can resolve contaminants at atomic resolution within nanometer-scale regions, it cannot easily provide a quantitative, large-area contamination measure. Here, we introduce a minimally destructive recoil-projectile coincidence method for ion transmission experiments that enables element-specific identification and quantification of surface contaminants with isotopic resolution. We demonstrate this approach by comparing self-supporting graphene samples prepared using either a polymethylmethacrylate (PMMA)-based or a PMMA-free transfer process. Carbon and hydrogen are identified as the dominant surface contaminants. PMMA-free transferred graphene exhibits the lowest native contamination levels. Following in-situ thermal annealing at 400 °C for 1 h, the measured carbon areal density approaches the value expected for atomically clean single-layer graphene within the experimental uncertainty, while hydrogen coverage is strongly reduced. Unlike PMMA-transferred graphene, which rapidly recontaminates after annealing, PMMA-free transferred graphene remains nearly contamination-free for at least 140 min under ultra-high vacuum conditions ($p_{\mathrm{base}} = 2 \times 10^{-8}$ mbar). Beyond graphene, the presented method establishes a quantitative characterization platform for ultrathin materials, enabling studies of surface cleanliness, adsorption, implantation and surface interaction dynamics in such systems.

cond-mat.mtrl-sci↗

arXiv2019

In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering

We demonstrate a novel approach for non-destructive in-situ characterization of phase transitions of ultrathin nickel silicide films using 3D medium-energy ion scattering. The technique provides simultaneously composition and real-space crystallography of silicide films during the annealing process using a single sample. We show, for 10 nm Ni films on Si, that their composition follows the normal transition sequence, such as Ni-Ni2Si-NiSi. For samples with initial Ni thickness of 3 nm, depth-resolved crystallography using a position-sensitive detector, shows that the Ni film transform from an as-deposited disordered layer to epitaxial silicide layers at a relatively low temperature of ~290 °C.

cond-mat.mtrl-sci↗

arXiv2019

Electronic interaction of slow hydrogen and helium ions in the nickel-silicon system

Electronic stopping cross sections (SCS) of nickel, silicon and nickel-silicon alloys for protons and helium (He) ions are studied in the regime of medium and low energy ion scattering, i.e., for ion energies in the range from 500 eV to 200 keV. For protons, at velocities below the Bohr velocity the deduced SCS is proportional to the ion velocity for all investigated materials. In contrast, for He ions non-linear velocity scaling is observed in all investigated materials. Static calculations using density functional theory (DFT) available from literature accurately predict the SCS of Ni and Ni-Si alloy in the regime with observed velocity proportionality. At higher energies, the energy dependence of the deduced SCS of Ni for protons and He ions agrees with the prediction by recent time dependent DFT calculations. The measured SCS of the Ni-Si alloy was compared to the SCS obtained from Bragg's rule based on SCS for Ni and Si deduced in this study, yielding good agreement for protons, but systematic deviations for He projectiles, by almost 20%. Overall, the obtained data indicate the importance of non adiabatic processes such as charge exchange for proper modelling of electronic stopping of in particular medium energy ions heavier than protons in solids.

physics.atom-ph↗