arXiv subjects

Tulai Sun

Publications and source records attributed to Tulai Sun.

6 recordsLinked to original sources

arXiv2026

Dimensionality tuning of heavy-fermion states in ultrathin CeSi2 films

Dimensionality tuning is an important method to modify the electronic states of quantum materials. However, the mechanism of such tuning in heavy fermion systems and its connection with transport properties remain largely unexplored. Here by combining molecular beam epitaxy (MBE), in-situ angle-resolved photoemission spectroscopy (ARPES) and transport measurements, we study the electronic states of the heavy-fermion compound CeSi2 as a function of film thickness. In three dimensional thick films, our measurements reveal a dispersive Kondo peak at the Fermi level (EF) and satellite peaks originating from crystal electric field (CEF) excitations, characteristic of heavy fermion systems. For two-dimensional ultrathin films, the CEF satellites are largely suppressed while the ground-state Kondo peak at EF remains strong, although it develops at lower temperatures. Simultaneously, the maximum temperature Tmax of the magnetic resistivity, \r{ho}m(T), changes from ~100 K in thick films to ~35 K in ultrathin films. This can be attributed to the dimensionality driven reduction of CEF excitations during the Kondo process, in good agreement with spectroscopic results. Our work provides direct insight to understand the quantum confinement effects on strongly correlated 4f-electron systems and opens up new opportunities to explore emergent phenomena in two-dimensional heavy-fermion materials.

cond-mat.str-el↗

arXiv2025

Large ferromagnetic-like band splitting in ultrathin ${\mathrm{SmC}}_{6}$ films

Two-dimensional (2D) magnetic materials provide a unique platform for exploring quantum phases from magnetic order in reduced dimensions. While there have been extensive studies on 2D magnetic materials based on 3$d$ electrons, experimental studies on 4$f$-electron counterparts are far fewer, particularly on their electronic structure. In this study, we report the successful synthesis of ultrathin ${\mathrm{SmC}}_{6}$ films using molecular beam epitaxy. Utilizing in situ angle-resolved photoemission spectroscopy (ARPES), we uncover a large band splitting in the valence bands, which we attribute to the ferromagnetic order driven by exchange couplings between Sm 4$f$ moments and conduction electrons. Despite the small magnetic moment of Sm, the observed splitting is comparable to those of Eu- and Gd-based systems with much larger local moments. Interestingly, the surface state also exhibits splitting with similar magnitude and can be eliminated by overannealing, while the valence bands with ferromagnetic-like splittings remain robust. Our work provides spectroscopic insight to understand the electronic origin of magnetic order in Sm-based compounds. Our study also offers a platform to study 2D magnetic materials based on 4$f$ electrons.

cond-mat.str-el↗

arXiv2025

$3d$ flat bands and coupled $4f$ moments in the kagome-honeycomb permanent magnet Sm$_{2}$Co$_{17}$

Rare earth permanent magnets (REPMs) with both localized moments and itinerant conduction bands are not only important for fundamental research but also have significant technological applications. In particular, Sm$_{\rm 2}$Co$_{\rm 17}$ is a prototypical high-temperture REPM, where the Co atoms form a kagome-honeycomb stacked lattice. Here we report synthesis of epitaxial Sm$_{\rm 2}$Co$_{\rm 17}$ films using molecular beam epitaxy and measurements of their momentum-resolved electronic structure from \textit{in-situ} angle-resolved photoemission spectroscopy. Our results unveil two flat bands from Co $3d$ orbitals near the Fermi level ($E_F$), one at $\sim$\,--300\,meV and another right at $E_F$, which arise from orbital-selective destructive interference and strong electron correlations, respectively. In addition, our results reveal that Sm $4f$ states are far away from $E_F$ (hence mostly localized) and exhibit an anomalous temperature dependence, caused by the $3d$-$4f$ magnetic coupling. Our findings provide direct spectroscopic insights to understand the strong uniaxial ferromagnetism in Sm$_{\rm 2}$Co$_{\rm 17}$ (and REPMs alike). Our work also opens avenues to explore flat-band physics near $E_F$ and emergent phenomena in correlated kagome-honeycomb lattices.

cond-mat.str-el↗

arXiv2023

Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering

Phase engineering by strains in 2D semiconductors is of great importance for a variety of applications. Here, we present a study of strain induced ferroelectric (FE) transition on bismuth oxyselenide (Bi$_2$O$_2$Se) films, a high-performance (HP) semiconductor for next-generation electronics. Bi$_2$O$_2$Se is non-FE at ambient. Upon a loading force $\gtrsim 400$ nN, piezoelectric force responses exhibit butterfly loops on magnitude and 180$^\textrm{o}$ phase switching. By carefully ruling out extrinsic factors, these features are attributed to a transition to FE phase. The transition is further proved by the appearance of a sharp peak on optical second harmonic generation under an uniaxial strain. Fundamentally, solids with paraelectric at ambient and FE under strains are scarce. FE transition is discussed with the help of first-principle calculations and theoretical simulations. The switching of FE polarization acts as a knob for Schottky barrier engineering at contacts and serves as basis for a memristor with a huge switching ratio of 10$^6$. Our work endows a new degree of freedom to a HP electronic/optoelectronic semiconductor and the integration of FE and HP semiconductivity paving the way for multiple exciting functionalities, including HP neuromorphic computation and bulk piezophotovoltaic.

cond-mat.mtrl-sci↗

arXiv2021

Commensurate stacking phase transitions in an intercalated transition metal dichalcogenide

Intercalation and stacking order modulation are two active ways in manipulating the interlayer interaction of transition metal dichalcogenides (TMDCs), which lead to a variety of emergent phases and allow for engineering material properties. Herein, the growth of Pb intercalated TMDCs--Pb(Ta$_{1+x}$Se$_2$)$_2$, the first 124-phase, is reported. Pb(Ta$_{1+x}$Se$_2$)$_2$ exhibits a unique two-step first-order structural phase transition at around 230 K. The transitions are solely associated with the stacking degree of freedom, evolving from a high temperature phase with ABC stacking and symmetry $R3m$ to an intermediate phase with AB stacking and $P3m1$, and finally to a low temperature phase with again symmetry $R3m$, but with ACB stacking. Each step involves a rigid slide of building blocks by a vector [1/3, 2/3, 0]. Intriguingly, gigantic lattice contractions occur at the transitions on warming. At low temperature, bulk superconductivity with $T_\textrm{c}\approx$ 1.8 K is observed. The underlying physics of the structural phase transitions are discussed from first-principle calculations. The symmetry analysis reveals topological nodal lines in the band structure. Our results demonstrate the possibility to realize higher order metal intercalated phases of TMDCs, advance our knowledge of polymorphic transitions and may inspire stacking order engineering in TMDCs and beyond.

cond-mat.mtrl-sci↗

arXiv2021

High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

Quantum-dot light-emitting diodes (QD-LEDs) promise a new generation of efficient, low-cost, large-area, and flexible electroluminescent devices. However, the inferior performance of green and blue QD-LEDs is hindering the commercialization of QD-LEDs in display and solid-state lighting. Here, we demonstrate best-performing green and blue QD-LEDs with ~100% conversion of the injected charge carriers into emissive excitons. Key to this success is eliminating electron leakage at the organic/inorganic interface by using hole-transport polymers with low electron affinity and reduced energetic disorder. Our devices exhibit record-high peak external quantum efficiencies (28.7% for green, 21.9% for blue), exceptionally high efficiencies in wide ranges of luminance, and unprecedented stability (T95 lifetime: 580,000 h for green, 4,400 h for blue). The overall performance surpasses previously reported solution-processed green and blue LEDs.

physics.optics↗